features trenchfet power mosfet: 1.8-v rated new low thermal resistance powerpak package advanced high cell density process applications load switch pa switch battery switch bi-directional switch SI7925DN vishay siliconix new product document number: 72343 s-31614?rev. a, 11-aug-03 www.vishay.com 1 dual p-channel 12-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 0.042 @ v gs = - 4.5 v - 6.5 -12 0.058 @ v gs = - 2.5 v - 5.5 0.082 @ v gs = - 1.8 v - 1.2 1 2 3 4 5 6 7 8 s1 g1 s2 g2 d1 d1 d2 d2 3.30 mm 3.30 mm bottom view powerpak 1212-8 s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet ordering information: SI7925DN-t1 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds -12 v gate-source voltage v gs 8 v continuous drain current (t j = 150 c) a t a = 25 c i d - 6.5 - 4.8 c on ti nuous d ra i n c urren t (t j = 150 c) a t a = 85 c i d - 4.7 - 3.4 a pulsed drain current i dm -20 a continuous source current (diode conduction) a i s - 2.1 - 1.1 maximum power dissipation a t a = 25 c p d 2.5 1.3 w maximum power dissipation a t a = 85 c p d 1.5 0.69 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 40 50 maximum junction-to-ambient a steady state r thja 75 94 c/w maximum junction-to-case steady state r thjc 5.6 7 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI7925DN vishay siliconix new product www.vishay.com 2 document number: 72343 s-31614?rev. a, 11-aug-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.40 - 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 12 v, v gs = 0 v -1 a zero gate voltage drain current i dss v ds = - 12 v, v gs = 0 v, t j = 85 c -5 a on-state drain current a i d(on) v ds -5 v, v gs = - 4.5 v -20 a v gs = - 4.5 v, i d = - 6.5 a 0.033 0.042 drain-source on-state resistance a r ds(on) v gs = - 2.5 v, i d = - 5.5 a 0.046 0.058 ds(on) v gs = - 1.8 v, i d = - 1.2 a 0.065 0.082 forward transconductance a g fs v ds = - 6 v, i d = - 6.5 a 19 s diode forward voltage a v sd i s = - 2.1 a, v gs = 0 v - 0.8 - 1.2 v dynamic b total gate charge q g 11 12 gate-source charge q gs v ds = - 6 v, v gs = - 4.5 v, i d = - 6.5 a 1.7 nc gate-drain charge q gd 2.8 gate resistance r g 8.2 turn-on delay time t d(on) 20 30 rise time t r v dd = - 6 v, r l = 6 50 75 turn-off delay time t d(off) v dd = - 6 v , r l = 6 i d - 1 a, v gen = - 4.5 v, r g = 6 70 105 ns fall time t f 50 75 source-drain reverse recovery time t rr i f = - 2.1 a, di/dt = 100 a/ s 41 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 0 4 8 12 16 20 0123456 v gs = 5 thru 2.5 v t c = - 55 c 125 c 2 v 25 c output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 1.5 v 1 v
SI7925DN vishay siliconix new product document number: 72343 s-31614?rev. a, 11-aug-03 www.vishay.com 3 typical characteristics (25 c unless noted) - on-resistance ( r ds(on) ) 0 300 600 900 1200 1500 024681012 0.6 0.8 1.0 1.2 1.4 - 50 - 25 0 25 50 75 100 125 150 0 1 2 3 4 5 024681012 0.00 0.04 0.08 0.12 0.16 0.20 048121620 v ds - drain-to-source voltage (v) c rss c oss c iss v ds = 6 v i d = 6.5 a i d - drain current (a) v gs = 4.5 v i d = 6.5 a v gs = 4.5 v v gs = 1.8 v gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.00 0.04 0.08 0.12 0.16 0.20 012345 t j = 150 c t j = 25 c i d = 1.2 a 20 1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s v gs = 2.5 v 10 i d = 6.5 a
SI7925DN vishay siliconix new product www.vishay.com 4 document number: 72343 s-31614?rev. a, 11-aug-03 typical characteristics (25 c unless noted) 10 -3 10 -2 1 10 600 10 -1 10 -4 100 0 20 30 10 15 power (w) single pulse power time (sec) 25 - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold v oltage variance (v) v gs(th) t j - temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 75 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 100 600 0.1 0.001 1 10 safe operating area, junction-t o-ambient v ds - drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 t a = 25 c single pulse - drain current (a) i d 0.1 i d(on) limited r ds(on) limited 0.01 5 i dm limited bv dss limited p(t) = 10 p(t) = 1 p(t) = 0.1 dc p(t) = 0.01 p(t) = 0.001
SI7925DN vishay siliconix new product document number: 72343 s-31614?rev. a, 11-aug-03 www.vishay.com 5 typical characteristics (25 c unless noted) 1 0.2 0.1 10 -3 10 -2 10 -1 10 -4 2 1 0.1 0.01 0.05 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.02
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