vishay siliconix SIA427ADJ new product document number: 63651 s12-1141-rev. b, 21-may-12 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com p-channel 8 v (d-s) mosfet features ? trenchfet ? power mosfet ? thermally enhanced powerpak ? sc-70 package - small footprint area - low on-resistance ?100 % r g tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? load switch, for 1.2 v power line for portable and handheld devices notes: a. package limited b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( www.vishay.com/doc?73257 ). the powerpak sc-70 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the si ngulation process in manufacturing. a sol der fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. f. maximum under steady state conditions is 80 c/w. product summary v ds (v) r ds(on) ( ? ) (max.) i d (a) q g (typ.) - 8 0.016 at v gs = - 4.5 v - 12 a 30 nc 0.0215 at v gs = - 2.5 v - 12 a 0.026 at v gs = - 1.8 v - 12 a 0.032 at v gs = - 1.5 v - 12 a 0.095 at v gs = - 1.2 v - 3 powerpak sc-70-6l-sin g le 6 5 4 1 2 3 d d d d g s s 2.05 mm 2.05 mm orderin g information: SIA427ADJ-t4-ge3 (lead (p b )-free and halogen-free) SIA427ADJ-t1-ge3 (lead (p b )-free and halogen-free) markin g code x x x b t x lot tracea b ility and date code part # code s g d p-channel mosfet absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 8 v gate-source voltage v gs 5 continuous drain current (t j = 150 c) t c = 25 c i d - 12 a a t c = 70 c - 12 a t a = 25 c - 12 a, b, c t a = 70 c - 9.9 b, c pulsed drain current (t = 300 s) i dm - 50 continuous source-drain diode current t c = 25 c i s - 12 a t a = 25 c - 2.9 b, c maximum power dissipation t c = 25 c p d 19 w t c = 70 c 12 t a = 25 c 3.5 b, c t a = 70 c 2.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t ? 5 s r thja 28 36 c/w maximum junction-to-case (drain) steady state r thjc 5.3 6.5
www.vishay.com 2 document number: 63651 s12-1141-rev. b, 21-may-12 vishay siliconix SIA427ADJ new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0, i d = - 250 a - 8 v v ds temperature coefficient ? v ds /t j i d = - 250 a - 5.8 mv/c v gs(th) temperature coefficient ? v gs(th) /t j 2.4 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.35 - 0.8 v gate-source leakage i gss v ds = 0 v, v gs = 5 v 100 na zero gate voltage drain current i dss v ds = - 8 v, v gs = 0 v - 1 a v ds = - 8 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds ?? - 5 v, v gs = - 4.5 v - 10 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 8.2 a 0.013 0.016 ? v gs = - 2.5 v, i d = - 7.2 a 0.018 0.0215 v gs = - 1.8 v, i d = - 6.6 a 0.021 0.026 v gs = - 1.5 v, i d = - 1 a 0.025 0.032 v gs = - 1.2 v, i d = - 1 a 0.037 0.095 forward transconductance a g fs v ds = - 4 v, i d = - 8.2 a 37 s dynamic b input capacitance c iss v ds = - 4 v, v gs = 0 v, f = 1 mhz 2300 pf output capacitance c oss 735 reverse transfer capacitance c rss 690 total gate charge q g v ds = - 4 v, v gs = - 5 v, i d = - 10 a 33 50 nc v ds = - 4 v, v gs = - 4.5 v, i d = - 10 a 30 45 gate-source charge q gs 3 gate-drain charge q gd 6.6 gate resistance r g f = 1 mhz 2 9 18 ? tu r n - o n d e l ay t i m e t d(on) v dd = - 4 v, r l = 0.4 ? i d ? - 9.8 a, v gen = - 4.5 v, r g = 1 ? 20 30 ns rise time t r 20 30 turn-off delay time t d(off) 70 105 fall time t f 40 60 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 12 a pulse diode forward current i sm - 50 body diode voltage v sd i s = - 9.8 a, v gs = 0 - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 9.8 a, di/dt = 100 a/s, t j = 25 c 40 80 ns body diode reverse recovery charge q rr 12 25 nc reverse recovery fall time t a 14 ns reverse recovery rise time t b 26
document number: 63651 s12-1141-rev. b, 21-may-12 www.vishay.com 3 vishay siliconix SIA427ADJ new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current and gate voltage gate charge 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5vthru2v v gs =1.5v v gs =1v v ds - drain-to-source voltage (v) i d - drain current (a) 0 0.01 0.02 0.03 0.04 0.05 0.06 0 1020304050 v gs =1.8v v gs =1.5v v gs =1.2v v gs =4.5v r ds(on) - on-resistance ( ) i d - drain current (a) 0 1 2 3 4 5 0 10203040 i d = 12.3 a v ds =2 v v ds =6.4v v ds =4v q g - total gate charge (nc) v gs - gate-to-source voltage (v) transer characteristics capacitance on-resistance s. junction temperature 0 2 4 6 8 10 0.0 0.3 0.6 0.9 1.2 1.5 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-source voltage (v) i d - drain current (a) 0 500 1000 1500 2000 2500 3000 3500 4000 02468 c iss c oss c rss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 v gs =1.8v,4.5v;i d =8.2a v gs =1.2v;i d =1a v gs =1.5v;i d =1a t j - junction temperature (c) (normalized) r ds(on) - on-resistance
www.vishay.com 4 document number: 63651 s12-1141-rev. b, 21-may-12 vishay siliconix SIA427ADJ new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) soure-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) i s - source current (a) 0.2 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v gs(th) (v) t j - temperature (c) on-resistance s. gate-to-source voltage single pulse power, junction-to-ambient 0 0.01 0.02 0.03 0.04 0.05 0.06 012345 i d = 8.2 a; t j = 125 c i d =8.2a;t j = 25 c i d = 1 a; t j = 125 c i d =1a;t j = 25 c r ds(on) - on-resistance ( ) v gs - gate-to-source voltage (v) po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 0 5 10 15 20 25 30 safe operating area, junction-to-ambient 1 0.1 1 10 0.01 10 0.1 t a =25 c single pulse 100 ms dc 100 1ms 10 s 1s 10 ms 100 s v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified i d - drain current (a) bvdss limited limited by r * ds(on)
document number: 63651 s12-1141-rev. b, 21-may-12 www.vishay.com 5 vishay siliconix SIA427ADJ new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 package limited t c - case temperature (c) i d - drain current (a) power derating 0 5 10 15 20 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w )
www.vishay.com 6 document number: 63651 s12-1141-rev. b, 21-may-12 vishay siliconix SIA427ADJ new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for more information please contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63651 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 0.02 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 8 0 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -4 1 0.1 0.2 0.1 d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 0.02 single p u lse 0.05 10 -1
vishay siliconix package information document number: 73001 06-aug-07 www.vishay.com 1 powerpak ? sc70-6l dim single pad dual pad millimeters inches millimeters inches min nom max min nom max min nom max min nom max a 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 a1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 c 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 d 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 d1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 d2 0.135 0.235 0.335 0.005 0.009 0.013 e 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 e1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 e2 0.345 0.395 0.445 0.014 0.016 0.018 e3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 bsc 0.026 bsc 0.65 bsc 0.026 bsc k 0.275 typ 0.011 typ 0.275 typ 0.011 typ k1 0.400 typ 0.016 typ 0.320 typ 0.013 typ k2 0.240 typ 0.009 typ 0.252 typ 0.010 typ k3 0.225 typ 0.009 typ k4 0.355 typ 0.014 typ l 0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 t 0.05 0.10 0.15 0.002 0.004 0.006 ecn: c-07431 ? rev. c, 06-aug-07 dwg: 5934 e2 back s ide view of s ingle back s ide view of dual note s : 1. all dimen s ion s a re in millimeter s 2. p a ck a ge o u tline excl us ive of mold fl as h a nd met a l bu rr 3 . p a ck a ge o u tline incl us ive of pl a ting pin1 pin6 pin5 pin4 pin2 pin 3 a z detail z z d e k1 k2 c a1 k 3 k2 k2 e b b e pin6 pin5 pin4 pin1 pin 3 pin2 e1 e1 e1 l l k4 k k k d1 d2 d1 d1 k1 e 3
application note 826 vishay siliconix document number: 70486 www.vishay.com revision: 21-jan-08 11 application note recommended pad layout for powerpak ? sc70-6l single 1 0.300 (0.012) 0.350 (0.014) 2.200 (0.087) 1.500 (0.059) 0.650 (0.026) 0.950 (0.037) 0.300 (0.012) 0.355 (0.014) 0.235 (0.009) 0.475 (0.019) 0.870 (0.034) 0.275 (0.011) 0.350 (0.014) 0.550 (0.022) 0.650 (0.026) dimensions in mm/(inches) return to index
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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