1 2 3 jiangsu changjiang electronics technology co., ltd sot-89 -3l plastic-encapsulate transistors 2SD2391 transistor (npn) features low v ce(sat) marking: dt maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =50 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =50 a,i c =0 6 v collector cut-off current i cbo v cb =50v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) v ce =2v,i c =0.5a 120 270 dc current gain h fe(2) v ce =2v,i c =1.5a 45 collector-emitter saturation voltage v ce(sat) i c =1a,i b =50ma 0.35 v transition frequency f t v ce =2v,i c =0.5a, f=100mhz 210 mhz output capacitance c ob v cb =10v,i e =0, f=1mhz 21 pf symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 6 v i c collector current -continuous 2 a p c collector power dissipation 0.5 w t j junction temperature 150 t stg storage temperature -55-150 sot-89 -3l 1.base 2.collector 3.emitter www.cj-elec.com 1 c , nov ,2015
min m a x min m a x a 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 d 4.400 4.600 0.173 0.181 d1 e 2.300 2.600 0.091 0.102 e1 3.940 4.250 0.155 0.167 e e1 l 0.900 1.200 0.035 0.047 symbol dimensions in millimeters dimensions in inches 1.550 ref. 0.061 ref. 1.500 typ. 0.060 typ. 3.000 typ. 0.118 typ. 6 2 7 / 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 / 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 2 c , nov ,2015
6 2 7 / 7 d s h d q g 5 h h o www.cj-elec.com 3 c , nov ,2015
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