2003. 10. 24 1/2 semiconductor technical data KDV142E silicon epitaxial pin type diode revision no : 0 for antenna switches in mobile applications.features low capacitance : c t =0.35[pf] (max.) low series resistance : r s =1.5[ ] (max.). small package : esc. maximum rating (ta=25 ) esc dim millimeters a bc d e 1.60 0.10 1.20 0.100.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e 1. anode2. cathode f 0.13 0.05 f + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) characteristic symbol rating unit reverse voltage v r 30 v forward current i f 100 ma junction temperature t j 150 storage temperature range t stg -55 150 type name marking f e characteristic symbol test condition min. typ. max. unit reverse current i r v r =30v - - 0.1 a forward voltage v f i f =10ma - - 1.0 v total capacitance c t v r =1v, f=1mhz - - 0.35 pf series resistance r s i f =10ma, f=100mhz - - 1.3 esd-capability * - c=200pf, r=0 , both forward and reverse direction 1 pulse 100 - - v * failure cirterion : i r >100na at v r =30v. downloaded from: http:///
2003. 10. 24 2/2 KDV142E revision no : 0 reverse current i (a) r reverse voltage v (v) r i - v rr i - v f forward voltage v (v) f forward current i (a) ff r - v f forward voltage v (v) pf 0 0.2 0.4 0.6 0.8 0 0.2 0.6 0.4 0.8 1.0 0 10 1 10 2 10 3 10 4 10 5 10 -13 10 -12 10 -1 10 -4 10 -3 10 -2 10 0 10 1 10 2 10 -11 10 -12 10 -10 10 -8 10 -6 10 -4 10 -2 10 02 04 06 0 reverse voltage v (v) total capacitance c (pf) 0.1 r t c - v tr f=1mhz f=100mhz f=100mhz 1.0 10 0.1 1.0 forward current i (a) series resistance r ( ) f s series resistance parallel r ( ) p r - i sf downloaded from: http:///
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