dm n 10 h 7 00 s document number: ds 38103 rev. 2 - 2 1 of 7 www.diodes.com april 2016 ? diodes incorporated dm n 10h700 s new product advanced information 100v n - channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = + 25c 100 v 700m ? @ v gs = 10v 0.70a 900m ? @ v gs = 6.0 v 0.62a description this new generation mosfet is designed to minimize the on - state resistance (r ds (on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? dc- dc converters ? power m anagement f unctions ? battery operated systems and solid - state relays ? drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc . features and benefits ? low gate threshold voltage ? low input capacitance ? fast switching speed ? small surface mount package ? totally lead - free & fully roh s compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: sot 2 3 ? case material: molded plastic. ul flammability classification rating 94v - 0 ? moisture sens itivity: level 1 per j - std - 020 ? terminals: solderable per mil - std - 202, method 208 ? lead free plating (matte tin finish a nnealed over alloy 42 l eadframe). ? terminal connections: see diagram ? weight: 0.006 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm n1 0 h 7 00 s - 7 sot 2 3 3 , 000/tape & reel dm n1 0 h 7 00 s - 13 sot 2 3 10, 000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporated?s definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com /products/packages.html . mar king information date code key year 2015 2016 2017 201 8 201 9 20 20 20 21 20 22 code c d e f g h i j month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d t op view d g s top view pin configuration equivalent circuit 700 d s g 700 = product type marking code y m = date code marking y or y = year (ex: d = 2016 ) m = month (ex: 9 = september)
dm n 10 h 7 00 s document number: ds 38103 rev. 2 - 2 2 of 7 www.diodes.com april 2016 ? diodes incorporated dm n 10h700 s new product advanced information maximum ratings ( @t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 1 0 0 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10v steady state t a = + 25c t a = + 70c i d 0.70 0.56 a pulsed drain curren t ( 10 s p ulse, d uty c ycle Q 1 % ) i dm 2.5 a maximum body diode continuous current (note 6 ) i s 0.6 a thermal characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 5 ) p d 0.4 w (note 6 ) 0.5 thermal resistance, junction to ambient (note 5 ) steady state r t ja 303 c/w thermal resistance, junction to ambient (note 6 ) r t ja 239 thermal resistance, junction to case (note 6 ) r t j c 88 operating and storage temperature range t j, t stg - 55 to + 150 c electrical characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 1 0 0 v v gs = 0v, i d = 250 a zero gate voltage drain current i dss 1 a v ds = 10 0 v , v gs = 0v gate - source leakage i gss 100 n a v gs = 20 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs (th) 2 .0 2.7 4 .0 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) 540 700 m ? v gs = 10v , i d = 1.5 a 550 900 v gs = 6.0 v, i d = 1 .0 a diode forward voltage v sd 0.9 1.1 v v gs = 0v, i s = 1. 5 a dynamic characteristics (note 8 ) input capacitance c iss 235 pf v ds = 5 0 v , v gs = 0v , f = 1 .0 mhz output capacitance c oss 7 reverse transfer capacitance c rss 5 gate resistance r g 1.9 ? v ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge q g 4.6 nc v ds = 50 v, v gs = 10 v, i d = 1 .0 a gate - source charge q gs 1.1 gate - drain charge q gd 1.6 turn - on delay time t d( on ) 2.5 n s v ds = 50 v, i d = 1.0 a , v g s = 10 v, r g = 6. 0 ? turn - on rise time t r 1.1 turn - off delay time t d( off ) 5.4 turn - off fall time t f 1.0 reverse recovery time t rr 22 n s v r = 100 v, i f =1 .8 a, di/dt= 1 00a/ s reverse recovery charge q rr 15 nc notes: 5 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper pad layout . 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to production testing.
dm n 10 h 7 00 s document number: ds 38103 rev. 2 - 2 3 of 7 www.diodes.com april 2016 ? diodes incorporated dm n 10h700 s new product advanced information 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs =3.8v v gs =4.0v v gs =4.5v v gs =5.0v v gs =6.0v v gs =10.0v 0 0.5 1 1.5 2 2.5 3 1 2 3 4 5 6 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5 v - 55 25 85 125 150 0 1 2 3 4 5 6 7 8 9 10 0 4 8 12 16 20 r ds(on) , drain - source on - resistance ( ? ) v gs, gate - source voltage (v) figure 4. typical transfer characteristic i d =1.0a 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.5 1 1.5 2 2.5 3 3.5 4 r ds(on) , drain - source on - resistance ( ? ) i d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs =6v v gs =10v 0 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( ) figure 6. on - resistance variation with junction temperature v gs =10v, i d =1.5a 0 1 2 3 4 5 6 0 0.5 1 1.5 2 2.5 3 3.5 4 r ds(on) , drain - source on - resistance ( ? ) i d , drain current (a) figure 5. typical on - resistance vs. drain current and junction temperature v gs = 10v - 55 25 85 125 150
dm n 10 h 7 00 s document number: ds 38103 rev. 2 - 2 4 of 7 www.diodes.com april 2016 ? diodes incorporated dm n 10h700 s new product advanced information 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( ? ) t j , junction temperature ( ) figure 7. on - resistance variation with junction temperature v gs =10v, i d =1.5a 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( ) figure 8. gate threshold variation vs . junction temperature i d =250 a i d =1ma 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c iss c oss c rss 0 1 2 3 4 5 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current v gs =0v, t j = - 55 v gs =0v, t j =25 v gs =0v,t j =85 v gs =0v,t j =125 v gs =0v,t j =150 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area t j(max) =150 t c =25 single pulse dut on 1*mrp board v gs = 10v r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v gs (v) q g (nc) figure 11. gate charge v ds =50v, i d =1a
dm n 10 h 7 00 s document number: ds 38103 rev. 2 - 2 5 of 7 www.diodes.com april 2016 ? diodes incorporated dm n 10h700 s new product advanced information 0.001 0.01 0.1 1 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance r ja (t)=r(t) * r ja r ja =301 /w duty cycle, d=t1 / t2 d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.7 d=0.9
dm n 10 h 7 00 s document number: ds 38103 rev. 2 - 2 6 of 7 www.diodes.com april 2016 ? diodes incorporated dm n 10h700 s new product advanced information package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. sot23 sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.890 1.00 0.975 k1 0.903 1.10 1.025 l 0.45 0.61 0.55 l1 0.25 0.55 0.40 m 0.085 0.150 0.110 a 0 8 -- all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. sot23 dimensions value (in mm) c 2.0 x 0.8 x 1 1.35 y 0.9 y1 2.9 j k1 k l1 gauge plane 0.25 h l m all 7 a c b d g f a x y y1 c x1
dm n 10 h 7 00 s document number: ds 38103 rev. 2 - 2 7 of 7 www.diodes.com april 2016 ? diodes incorporated dm n 10h700 s new product advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2016 , diodes incorpora ted www.diodes.com
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