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savantic semiconductor product specification silicon npn power transistors 2SD388 description with to-3 package high power dissipation applications for use in power amplifier applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 140 v v ebo emitter-base voltage open collector 7 v i c collector current 8 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors 2SD388 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ;i b =0 140 v v (br)ebo emitter-base breakdown voltage i e =10ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =6a; i b =0.6a 2.0 v v besat base-emitter saturation voltage i c =6a; i b =0.6a 2.5 v i cbo collector cut-off current v cb =150v; i e =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =5v 50 h fe-2 dc current gain i c =5a ; v ce =5v 20 f t transition frequency i c =1a ; v ce =10v 9 mhz downloaded from: http:///
savantic semiconductor product specification 3 silicon npn power transistors 2SD388 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm) downloaded from: http:///

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