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| inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor BUV48C description collector-emitter sustaining voltage- : v ceo(sus) = 700v (min) high current capability fast switching speed applications designed for switching and industrial applications from single and three-phase mains. absolute maximum ratings(ta=25 ) symbol parameter value unit v cer collector-emitter voltage (r be = 10 ) 1200 v v ces collector-emitter voltage (v be = 0) 1200 v v ceo collector-emitter voltage 700 v v ebo emitter-base voltage 7 v i c collector current-continuous 15 a i cm collector current-peak t p < 5ms 30 a i b base current-continuous 4 a i bm base current-peak t p < 5ms 20 a p c collector power dissipation @t c =25 125 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor BUV48C electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0 700 v v cer(sus) collector-emitter sustaining voltage i c = 0.5a; l= 2mh; v clamp = 1200v r be = 10 1200 v v ce (sat)-1 collector-emitter saturation voltage i c = 6a; i b = 1.5a 1.5 v v ce (sat)-2 collector-emitter saturation voltage i c = 10a; i b = 4a 3.0 v v be (sat)-1 base-emitter saturation voltage i c = 6a; i b = 1.5a 1.5 v v be (sat)-2 base-emitter saturation voltage i c = 10a; i b = 4a 2.0 v i cer collector cutoff current v ce = 1200v; r be = 10 v ce = 1200v; r be = 10 ; t c =125 0.5 4.0 ma i ces collector cutoff current v ce = 1200v; v be = 0 v ce = 1200v; v be = 0; t c =125 0.5 3.0 ma i ceo collector cutoff current v ce = 700v; i b = 0 1.0 ma i ebo emitter cutoff current v eb = 6v; i c = 0 1.0 ma switching times resistive load t on turn-on time i c = 6a; i b1 =-i b2 = 1.5a; v cc = 250v 1.0 s t s storage time 3.0 s t f fall time 0.7 s |
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