p p j u 7 na 6 5 / pju7na65 - 1 / pj d 7 na 6 5 / pj p 7 na 6 5 / pj f 7 na 6 5 march 16,2015 - rev.02 page 1 6 5 0 v n - c hannel mosfet v oltage 6 5 0 v c urrent 7 a ito - 220ab - f to - 220ab to - 252aa to - 251aa to - 251aa - 1 f eatures ? r ds(on) , v gs @10v,i d @ 3 .5 a < 1 . 5 ? high switching speed ? im proved dv/dt capability ? low gate charge ? low reverse transfer capacitance ? lead free in compliance wit h eu rohs 2011/65/eu directive . ? green molding compound as p er iec61249 std. (halogen free) m echanical data ? case: to - 251aa , to - 251aa - 1, to - 252aa ,to - 220ab, ito - 220ab - f package ? terminals : solderable per mil - std - 750, method 2026 ? to - 251aa approx. weight : 0.0104 ounces, 0.297 grams ? to - 251aa - 1 approx. weight : 0.01 18 ounces, 0. 336 grams ? to - 252aa approx. weight : 0.0104 ounces, 0.297 grams ? to - 220ab approx. weight : 0.06 7 ounces, 1. 9 grams ? ito - 220ab - f approx. weight : 0.068 ounc es, 2 grams m aximum r atings and t hermal c haracteristics (t a =25 o c unless otherwise noted) parameter symbol to - 251aa to - 251aa - 1 to - 220ab ito - 220ab - f to - 252aa units drain - source voltage v ds 6 5 0 v gate - source voltage v gs + 30 v continuous drain curr ent i d 7 a pulsed drain current i dm 28 a single pulse avalanche energy (note 1 ) e as 4 35 mj power dissipation t c =25 o c p d 140 145 4 6 140 w derate above 25 o c 1.12 1.16 0.3 7 1.12 w/ o c operating junction and storage temperature range t j ,t stg - 55~150 o c typical thermal resistance - junction to case - j unction to ambient r jc ja 0.89 110 0.88 62.5 2.7 2 120 0.89 110 o c /w ? limited only by maximum junction temperature
p p j u 7 na 6 5 / pju7na65 - 1 / pj d 7 na 6 5 / pj p 7 na 6 5 / pj f 7 na 6 5 march 16,2015 - rev.02 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symb ol test condition min. typ. max. units static drain - source breakdown voltage bv dss v gs =0v,i d =250ua 6 5 0 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2 2.88 4 v drain - source on - state resistance r ds(on) v gs =10v,i d = 3.5 a - 1. 35 1. 5 dss v ds = 6 5 0v,v gs =0v - 0.03 1 .0 ua gate - source leakage current i gss v gs = + 30v,v ds =0v - + 1 0 + 100 na diode forward voltage v sd i s = 7 a,v gs =0v - 0.88 1.4 v dynamic (note 4 ) total gate charge q g v ds = 52 0 v, i d = 7 a, v gs =10v (note 2,3 ) - 16.8 - nc gate - source charge q gs - 5 - gate - drain charge q gd - 6 - input capacitance ciss v ds =25v, v gs =0v, f=1.0mhz - 7 54 - pf output capacitance coss - 97 - reverse transfer capacitance crss - 0. 8 - turn - on delay time td (on) v dd = 3 25 v, i d = 7 a, r g = 25 (note 2,3 ) - 14 - ns turn - on rise time t r - 28 - turn - off delay time td (off) - 38 - turn - off fall time t f - 28 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 7 a maximum pulsed drain - source diode forw ard current i sm --- - - 28 a reverse recovery time trr v gs =0v, i s = 7 a di f / dt=100a/us (note 2 ) - 493 - ns reverse recovery charge qrr - 2.99 - uc notes : 1. l=30mh, i as = 5. 25 a, v dd = 5 0 v, r g =2 5 ohm, starting t j =25 o c 2. pulse width < 300us, duty cycle < 2% 3. essential ly independent of operating temperature typical characteristics . 4. guaranteed by design, not subject to product ion testing
p p j u 7 na 6 5 / pju7na65 - 1 / pj d 7 na 6 5 / pj p 7 na 6 5 / pj f 7 na 6 5 march 16,2015 - rev.02 page 3 t ypical characteristic curves fig.1 output characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 resistance vs. junction temperature fig. 5 capacitance vs. drain - source voltage fig. 6 source - drain diode forward voltage
p p j u 7 na 6 5 / pju7na65 - 1 / pj d 7 na 6 5 / pj p 7 na 6 5 / pj f 7 na 6 5 march 16,2015 - rev.02 page 4 t ypical characteristic curves fig. 7 gate charge fig. 8 bv dss vs. junction temperatu re on - fig. 9 threshold voltage variation with temperature fig. 10 maximum safe operating area fig. 11 maximum safe operating area fig. 1 2 maximum safe operating area
p p j u 7 na 6 5 / pju7na65 - 1 / pj d 7 na 6 5 / pj p 7 na 6 5 / pj f 7 na 6 5 march 16,2015 - rev.02 page 5 t ypical characteristic curves fig. 13 pju/pjd normalized tran sient thermal impedance vs. pulse width fig. 14 pjp 7 na 65 normalized transient thermal impedance vs. pulse width fig. 15 pjf 7 na 65 normalized transient thermal impedance vs. pulse width
p p j u 7 na 6 5 / pju7na65 - 1 / pj d 7 na 6 5 / pj p 7 na 6 5 / pj f 7 na 6 5 march 16,2015 - rev.02 page 6 packaging information . ito - 220ab - f dimension u nit: mm to - 220 ab dimension u nit: mm to - 252aa dimension u nit: mm to - 251aa dimension u nit: mm
p p j u 7 na 6 5 / pju7na65 - 1 / pj d 7 na 6 5 / pj p 7 na 6 5 / pj f 7 na 6 5 march 16,2015 - rev.02 page 7 packaging information . to - 251aa - 1 dimension u nit: mm
p p j u 7 na 6 5 / pju7na65 - 1 / pj d 7 na 6 5 / pj p 7 na 6 5 / pj f 7 na 6 5 march 16,2015 - rev.02 page 8 part no packi ng code version part n o packing code package type packing type marking ver sion pj u7na65 _t0_00001 to - 251aa 80pcs / tube u7na65 halogen free pj u7na65 - 1 _t0_00001 to - 251aa - 1 80pcs / tube 7na6 5 halogen free pjd7na65_l2_00001 to - 252aa 3,000pcs / 13
p p j u 7 na 6 5 / pju7na65 - 1 / pj d 7 na 6 5 / pj p 7 na 6 5 / pj f 7 na 6 5 march 16,2015 - rev.02 page 9 disclaimer
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