s mhop microelectronics c orp. a product summary v dss i d r ds(on) (m @ vgs=-4.0v 49 @ vgs=-4.5v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. p-channel enhancement mode field effect transistor www.samhop.com.tw aug,22,2012 1 details are subject to change without notice. STS6409 ver 1.0 r e r r p p r p p o r r thermal characteristics 100 thermal resistance, junction-to-ambient r ja a c/w symbol v ds v gs i dm a i d units parameter -20 -4.0 -15 v v 10 gate-source voltage drain-source voltage absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a t a =25 c w p d c 1.25 -55 to 150 t a =25 c maximum power dissipation operating junction and storage temperature range t j , t stg t a =70 c -3.2 a t a =70 c 0.8 w a a esd protected. 58 @ vgs=-3.1v 52 @ vgs=-3.7v 65 @ vgs=-2.5v s g d s o t 2 6 t o p v i e w d g d d s 1 2 3 6 5 4 d
symbol min typ max units bv dss -20 v 1 i gss 10 ua v gs(th) -0.5 v m ohm v gs =-4.5v , i d =-2.0a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs ,i d =-1ma v ds =-16v , v gs =0v v gs =10v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =-250ua on characteristics STS6409 ver 1.0 -0.7 -1.5 g fs 11 s v sd c iss 613 pf c oss 159 pf c rss 141 pf q g 85 nc 225 nc q gs 1310 nc q gd 605 t d(on) 11.8 ns t r 0.85 ns t d(off) 4.7 ns t f ns gate-drain charge v ds =-10v,v gs =0v switching characteristics gate-source charge v dd =-16v i d =-2.0a v gs =-4.5v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =-5v , i d =-2.0a input capacitance output capacitance dynamic characteristics forward transconductance diode forward voltage reverse transfer capacitance v gs =-2.5v , i d =-2.0a m ohm c f=1.0mhz c v ds =-16v,i d =-4.0a, v gs =-4.5v drain-source diode characteristics and maximum ratings v gs =0v,i s =-1.1a -0.8 -1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 10us, duty cycle < 1%. c.guaranteed by design, not subject to production testing. _ _ www.samhop.com.tw aug,22,2012 2 _ 38 49 49 65 v gs =-3.1v , i d =-2.0a m ohm 44 58 m ohm v gs =-4.0v , i d =-2.0a 39 50 m ohm v gs =-3.7v , i d =-2.0a 40 52 31 39 36 32 33
STS6409 ver 1.0 www.samhop.com.tw aug,22,2012 3 0 0 20 120 100 80 60 40 150 125 100 75 50 25 175 t a - ambient temperature - c dt - percentage of rated power - % derating factor of forward bias safe operating area 0 0 0.5 3 2.5 2 1.5 1 150 125 100 75 50 25 175 t a - ambient temperature - c pt - total power dissipation - w total power dissipation vs. ambient temperature mounted on fr-4 board of 1 inch 2 , 2oz 0.1 1 10 10 0.1 100 v gs =-4.5v single pulse t a =25 c r ds ( on) limit 0.01 10us forward bias safe operating area 1 00us 1ms 10 m s 1s dc -v ds - drain to source voltage - v -i d - drain current - a transient thermal resistance vs. pulse width 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 mounted on fr-4 board of 1 inch 2 , 2oz single pulse pw - pulse width - s rth(ch-a) - transient thermal resistance - c/w 1
STS6409 ver 1.0 www.samhop.com.tw aug,22,2012 4 0 0 8 20 16 1 0.8 0.6 0.4 0.2 -v ds - drain to source voltage - v -i d - drain current - a drain current vs. drain to source voltage v gs = 4.5 v 3.1 v 3.7 v 2.5 v 0.01 0 0.1 100 10 1 2.5 2 1.5 1 0.5 -v gs - gate to source voltage - v -i d - drain current - a forward transfer characteristics 3 25 c 75 c 125 c t a = -25 c -50 1.0 0.8 0.4 150 100 50 0 t ch - channel temperature - c -v gs(off) - gate to source cut-off voltage - v gatebto soure cut-off voltage vs. channel temperature i d = -1.0ma 0.01 0.01 0.1 100 10 1 100 10 1 0.1 -i d - drain current - a . y fs . - forward transfer admittance - s forward transfer admittance vs. drain current 0.9 t a = -25 c 25 c 75 c 125 c 0 20 80 60 40 100 10 1 0.1 -i d - drain current - a r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. drain current -3.1 v 0 0 20 80 60 40 8 6 4 2 -v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. gate to source voltage i d = -4.0a 12 10 4.0 v -3.7 v 0.5 0.6 0.7 4 12 -4.5 v -4.0 v v gs = -2.5 v
STS6409 ver 1.0 www.samhop.com.tw aug,22,2012 5 10 0.1 100 1000 100 10 1 -v ds - drain to source voltage - v c iss ,c oss ,c rss - capacitance - pf capacitance vs. drain to source voltage 10 0.1 100 1000 10 1 -i d - drain current - a t d(on) ,t r ,t d(off) ,t f - switching time - ns switching characteristics q g - gate charge -nc -v gs - gate to drain voltage - v dynamic input characteristics 0.01 0.1 100 10 1 0.9 0.6 0.3 0 -v f(s-d) - source to drain voltage - v -i f - diode forward current - a source to drain diode forward voltage 0 -50 45 30 15 150 100 50 0 t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. channel temperature 60 -4.0 v -4.5 v c oss c rss c iss v dd = -16.0 v v gs = -4.5 v r g =6 t d(on) 0 0 4 3 2 8 6 4 2 1 1.8 1.5 1.2 v gs =0v -3.7 v i d = -2.0a -3.1 v v gs = -2.5 v t d(off) t r t f 12 2.1 75 90 i d = -4.0 a -4 v -10 v v dd = -16.0 v 10
STS6409 www.samhop.com.tw aug,22,2012 6 package outline dimensions tsot 26 ver 1.0 l detail "a" millimeters inches symbols d e 2.692 3.099 2.591 3.000 e1 1.397 1.803 e e1 b 0.300 0.500 c 0.080 0.200 a a1 0.000 0.100 0.700 0.800 l1 l l1 0 o 6 o 0.106 0.122 0.102 0.118 0.055 0.071 0.012 0.020 0.003 0.008 0.000 0.004 0.028 0.032 0 o 6 o min max min max 0.950 ref. d e1 e e1 e b 1 2 3 6 54 a a1 1.900 ref. 0.037 ref. 0.075 ref. 0.300 0.600 0.012 0.024 0.600 ref. 0.023 ref. detail "a"
STS6409 www.samhop.com.tw aug,22,2012 7 tsot 26 tape and reel data tsot 26 carrier tape tsot 26 reel sot 26 a 4.00 2.00 0.10 + 0.05 4.00 + 0.10 + 1.00 +0.10 0.00 1.50 +0.10 0.00 1.75 0.10 + 3.50 0.05 + 8.0 + 0.30 a b b 0.25 + 0.05 r0. 3 5 max r0.3 ko 1.5 + 0.1 bo 3.2 + 0.1 section a-a 3.3 + 0.1 5 max r0.3 r0.3 section b-b 178.0 + 0.5 60 + 0.5 9.0 1.50 +1.5 -0 2.2 + 0.5 10.6 13.5 + 0.5 scale 2:1 ver 1.0
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