052-6272 rev c 6-2008 apt50gt60brdq2(g) typical performance curves 600v apt50gt60brdq2 APT50GT60BRDQ2G* *g denotes rohs compliant, pb free terminal finish. ? to-247 g c e c e g the thunderblot igbt ? is a new generation of high voltage power igbts. using non- punch through technology, the thunderblot igbt ? offers superior ruggedness and ultrafast switching speed. ?? low?forward?voltage?drop? ???high?freq.?switching?to?100khz ?? low?tail?current? ???ultra?low?leakage?current ?? rbsoa?and?scsoa?rated thunderbolt igbt ? maximum ratings all ratings: t c = 25c unless otherwise speci?ed. static electrical characteristics characteristic?/?test?conditions collector-emitter breakdown voltage (v ge = 0v, i c = 2ma) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 50a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 50a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volts ana symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l apt50gt60brdq2(g) 600 30 110 52 150 150a @ 600v 446 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current 7 @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 150c switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. apt website - http://www.a dv ancedpo we r. com caution: these devices are sensitive to electrostatic discharge. proper hand ling procedures should be followed. min typ max 600 3 4 5 1.7 2.0 2.5 2.2 50 tbd 120 downloaded from: http:///
052-6272 rev c 6-2008 apt50gt60brdq2(g) thermal and mechanical characteristics unit c/w gm min typ max .28 .67 5.9 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test?conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 50a t j = 150c, r g = 5 ?,? v ge = 15v, l = 100h,v ce = 600v i nductive?switching?(25c) v cc = 400v v ge = 15v i c = 50a r g = 5 ? t j = +25c inductive?switching?(125c) v cc = 400v v ge = 15v i c = 50a r g = 5 ?? t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 min typ max 2660 250 153 7.5 240 20 110 150 14 32 240 36 995 1110 1070 14 32 270 95 1035 1655 1505 unit pf v nc a ns j ns j 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ?gure 21, but with a silicon carbide diode. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 continuous current limited by package lead temperature. apt?reserves?the?right?to?change,?without?notice,?the?speciications?and?information?contained?herein . downloaded from: http:///
052-6272 rev c 6-2008 apt50gt60brdq2(g) typical performance curves v gs(th) , threshold voltage v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 250s pulse test<0.5 % duty cycle 160140 120 100 8060 40 10 0 160140 120 100 8060 40 20 05 4 3 2 1 0 1.151.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0 1 2 3 4 5 0 5 10 15 20 0 2 4 6 8 10 12 0 50 100 150 200 250 6 8 10 12 14 16 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 200180 160 140 120 100 8060 40 20 0 1614 12 10 86 4 2 0 3.53.0 2.5 2.0 1.5 1.0 0.5 0 160140 120 100 8060 40 20 0 t j = 125c t j = 25c t j = 25c. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 125c t j = 25c v ge = 15v v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure?1,??output??characteristics(t j =?25c)? figure?2,??output??characteristics?(t j =?125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure?3,??transfer??characteristics? figure?4,?gate??charge v ge , gate-to-emitter voltage (v) t j ,?junction?temperature?(c) figure?5,??on??state?voltage?vs?gate-to-?emitter?voltage? figure?6,?on?state?voltage?vs?junction?temp erature t j ,?junction?temperature?(c)? t c ,?case?temperature?(c) figure?7,?threshold?voltage??vs.?junction?temperature? figure?8,?dc?collector?current?vs?case?tempera ture i c = 25a i c = 50a i c = 100a i c = 25a i c = 50a i c = 100a t j = -55c 15v 11v 10v 9v 13v 8v 7v 6v t j = -55c i c = 50a t j = 25c v ce = 480v v ce = 300v v ce = 120v lead temperatur e limite d lead temperatur e limite d downloaded from: http:///
052-6272 rev c 6-2008 apt50gt60brdq2(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 5 ? l = 100h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure?9,?turn-on?delay?time?vs?collector?current? figure?10,?turn-off?delay?time?vs?collector?curren t i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure?11,??current?rise?time?vs?collector?current? figure?12,??current?fall?time?vs?collector?curren t i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure?13,?turn-on?energy?loss?vs?collector?current? figure??14,??turn?off?energy?loss?vs?collector?c urrent r g , gate resistance (ohms) t j ,?junction?temperature?(c) figure?15,?switching?energy?losses??vs.?gate?resistance? figure?16,?switching?energy?losses??vs?junct ion?temperature v ce = 400v v ge = +15v r g = 5 ? v ce = 400v t j = 25c , or 125c r g = 5 ? l = 100h 2520 15 10 50 9080 70 60 50 40 30 20 10 0 50004000 3000 2000 1000 0 10,000 8,0006,000 4,000 2,000 0 350300 250 200 150 50 0 180160 140 120 100 8060 40 20 0 35003000 2500 2000 1500 1000 500 0 5,0004,000 3,000 2,000 1,000 0 v ge = 15v v ce = 400v v ge = +15v r g = 5 ? 0 20 40 60 80 100 120 0 20 40 60 80 100 125 0 20 40 60 80 100 120 0 20 40 60 80 100 120 0 20 40 60 80 100 120 0 20 40 60 80 100 120 0 10 20 30 40 50 0 25 50 75 100 125 r g = 5 ? , l = 100 h, v ce = 400v t j = 125c t j = 25c r g = 5 ? , l = 100 h, v ce = 400v t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v e on2, 100a e off, 100a e on2, 50a e off, 50a e on2, 25a e off, 25a v ce = 400v v ge = +15v t j = 125c v ce = 400v v ge = +15v r g = 5 ? t j = 125c t j = 25c e on2, 100a e off, 100a e on2, 50a e off, 50a e on2, 25a e off, 25a downloaded from: http:///
052-6272 rev c 6-2008 apt50gt60brdq2(g) typical performance curves 0.300.25 0.20 0.15 0.10 0.05 0 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure?19a,?maximum?effective?transient?thermal?impedance,?junction-to-case?vs?pulse?duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 4,0001,000 500100 160140 120 100 8060 40 20 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure?17,?capacitance??vs??collector-to-emitter??voltage? figure?18,minimim?switching?safe?operating ?area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 figure?19b,??transient??thermal?impedance??model 10 20 30 40 50 60 70 80 90 100 f max , operating frequency (khz) i c , collector current (a) figure?20,?operating??frequency??vs?collector??current 120 5010 2 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc c oes c res c ies peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : 0.11 4 0.11 3 0.00570.0276 powe r (watts) rc model junctiontemp. ( c) case temperature. ( c) t j = 125 c t c = 75 c d = 50 %v ce = 400v r g = 5 ? downloaded from: http:///
052-6272 rev c 6-2008 apt50gt60brdq2(g) figure?22,?turn-on?switching?waveforms?and?deinitions figure?23,?turn-off?switching?waveforms?and?deinitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% apt40dq120 i c a d.u.t. v ce figure?21,?inductive?switching?test?circui t v cc downloaded from: http:///
052-6272 rev c 6-2008 apt50gt60brdq2(g) typical performance curves characteristic?/?test?conditions maximum average forward current (t c = 111c, duty cycle = 0.5) rms forward current (square wave, 50% duty) non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f ( av ) i f ( rms ) i fsm symbol v f characteristic?/?test?conditions i f = 50a forward voltage i f = 100a i f = 50a, t j = 125c static electrical characteristics unit amps unit volts min typ max 2.1 2.7 1.8 apt50gt60brdq2(g) 4063 320 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci?ed. ultrafast soft recovery anti-parallel diode min typ max - 22 - 25 - 35 - 3 - - 160 - 480 - 6 - - 85 - 920 - 20 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test?conditions i f = 40a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f = 40a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 40a, di f /dt = -1000a/ s v r = 400v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure?24a.?maximum?effective?transient?thermal?impedance,?junction-to-case?vs.?pulse?duration 0.700.60 0.50 0.40 0.30 0.20 0.10 0 0.5 single pulse 0.1 0.3 0.7 0.05 figure 24b, transient thermal impedance model peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : 0.2890.381 0.004480.120 powe r (watts) rc model junction temp ( c) case temperature ( c) d = 0.9 downloaded from: http:///
052-6272 rev c 6-2008 apt50gt60brdq2(g) t j = 125 c v r = 400v 20a 40a 80a 180160 140 120 100 8060 40 20 0 2520 15 10 50 duty cycle = 0.5 t j = 175 c 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 8070 60 50 40 30 20 10 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure?29.?dynamic?parameters?vs.?junction?temperature? figure?30.?maximum?average?forward?current?vs .?casetemperature? v r , reverse voltage (v) figure?31.??junction?capacitance?vs.?reverse?voltage q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 175 c t j = -55 c t j = 25 c t j = 125 c t j = 125 c v r = 400v 80a 20a 40a 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 120100 8060 40 20 0 14001200 1000 800600 400 200 0 t j = 125 c v r = 400v 80a 40a 20a t rr q rr q rr t rr i rrm 1.41.2 1.0 0.8 0.6 0.4 0.2 0.0 200180 160 140 120 100 8060 40 20 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) ?????????????????????????figure?25.?forward?current?vs.?forward?voltage? figure?26.?reverse?recovery? time?vs.?current?rate?of?change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) ? ???????figure?27.?reverse?recovery?charge?vs.?current?rate?of?change? figure?28.?reverse?recovery?cu rrent?vs.?current?rate?of?change downloaded from: http:///
052-6272 rev c 6-2008 apt50gt60brdq2(g) typical performance curves to - 247??package??outlin e e1 sac: tin, silver, copper 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 3.55 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) dimensions in millimeters and (inches) 2-plcs. collector(cathode ) emitter (anode ) gate collector (cathode) 4 3 1 2 5 5 zero 1 2 3 4 di f /d t - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure?32.?diode?test?circui t figure?33,?diode?reverse?recovery?waveform?and?definitions 0.25 i rrm pearson 2878 current transformer di f /d t adjust 30 h d.u.t. +18v 0v t rr / q rr waveform v r apt40gt60br downloaded from: http:///
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