c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics wfp3205 product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet 1201 w t -f044-rev.a1 sep.2013 features ? 110a,50v, r ds(on) (max 8m ? )@v gs =10v ? ultra-low gate charge(typical133nc) ? fast switching capability ? 100%avalanche tested ? maximum junction temperature range(150 ) general description this power mosfet is produced using winsemi s advanced planar stripe,dmos technology. this latest technology has beenespecially designed to minimize on-state resistance ,have a lowgate charge with superior switching performance ,and ruggedavalanche characteristics.this power mosfet is well suited for synchronous dc-dc converters and power management inportable and battery operated products. absolute maximum ratings symbol parameter value units v dss drain source voltage 50 v i d continuous drain current(@tc=25 ) 110 a continuous drain current(@tc=100 ) 80 a i dm drain current pulsed (note1) 390 a v gs gate to source voltage 20 v e as single pulsed avalanche energy note 2 2970 mj iar avalanche current note 1 60 a e ar repetitive avalanche energy (note1) 20 mj dv/dt peak diode recovery dv /dt (note3) 5.0 v/ ns p d total power dissipation(@tc=25 ) 200 w derating factor above 25 1.3 w/ t j ,t stg junction and storage temperature -55~ 150 t l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 0.63 /w r qja thermal resistance , junction-to -ambient - - 62 /w g d s
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 2 / 8 win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics wfp3205 product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30 v, v ds = 0 v - - 100 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds =50 v,v gs =0v - - 10 a v ds =40 v, t c =125 - - 10 a drain -source breakdown voltage v (br)dss i d =250 a,v gs =0v 50 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2 - 4 v drain -source on resistance r ds(on) v gs =10v,i d =60 a - - 8.0 m ? forward transconductance gfs v ds =25 v,i d =60 a 44 - - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 3100 - pf reverse transfer capacitance c rss - 199 - output capacitance c oss - 7 49 - switching time turn-on rise time tr v dd =28 v, i d =60 a r g = 25 ? (note4,5) - 120 - ns turn-on delay time td(on) - 1 6 - turn-off fall time tf - 70 - turn-off delay time td(off) - 5 5 - total gate charge(gate-source plus gate-drain) qg v ds =44 v, v gs =10v, i d =60 a (note4 ,5) - - 115 nc gate-source charge qgs - - 23 gate-drain("miller") charge qgd - - 48 source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 110 a pulse drain reverse current i drp - - - 390 a forward voltage(diode) v dsf i dr = 60 a,v gs =0v - - 1.5 v reverse recovery time trr i dr = 60 a,v gs =0v, di dr / dt =100 a / s - 425 - ns reverse recovery charge qrr - 4.31 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 0.15m h i as = 60 a , v dd =50v,r g = 25 ? ,starting t j =25 3.i sd 60 a,di/dt 300 a/us,v dd < bv dss , t j 150 4.pulse test:pulse width 30 0us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 3 / 8 win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics wfp3205 product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet fig.1 on region characteristics fig. 2 transfer characteristics fig. 5 gate charge characteristics fig. 6 maximum safe operation area fig 4 .capacitance characteristics no te s: 1 .2 5 0 s p u lse te st 2 .tc=2 5 c v g s 1 5 v 1 0 v 9 v 8 v 7 v 6 . 5 v 6 v 5 . 5 v 5 v t o p b o t t o m 0 . 1 1 1 0 1 0 0 1 1 0 1 0 0 1 0 0 0 v [v] d s i [ a ] d 1 7 5 c 2 5 c notes: 1.250s pulse test 2.v =40v d s 4 6 8 1 0 1 2 1 1 0 1 0 0 1 0 0 0 v [v] g s i [ a ] d 1 5 0 c 2 5 c n o te s: 1 .2 5 0 s p u lse te st 2 .v =0 v g s 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 0 . 1 1 1 0 1 0 0 1 0 0 0 v [v] s d i [ a ] d r ciss=cgs+cgd(cds=shorted) coss=cds+cgd crss=cgd c i s s c o s s c r s s 1 0 0 1 0 1 0 1 10 3 2 10 3 3 10 3 4 10 3 5 10 3 v drain-source voltage[v] d s c a p a c i t a n c e [ p f ] 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 0 2 4 6 8 1 0 1 2 v =44v d s v =28v d s v =11v d s q toltal gate charge[nc] g v g a t e s o u r c e v o l t a g e [ v ] g s note: 1. tc = 25c 2. tc = 150c 3.single pulse operation in this area is limited by r ds(on) 1 0 s 1 0 0 s 1 m s 1 0 m s v drain-source voltage[v] d s i d r a i n c u r r e n t [ a ] d 1 0 0 1 0 0 1 0 1 1 0 2 1 0 1 1 0 2 1 0 3 fig. 3 body diode forward voltage variation vs. source current and temperature
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 4 / 8 win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics wfp3205 product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet fig. 7 maximum drain current vs case temperature fig. 8 transient thermal response curve 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 tc c a s e te m p e ra tu re [c ] i d r a i n c u r r e n t [ a ] d t 1 t 2 p d m single pulse 1.z (t)=0.74 c/w max. 2.duty factor,d=t /t 3.t -t =p * j c 1 2 jm c dm z (t) j c * n o t e 1 e - 5 1 e - 4 1 e - 3 0 . 0 1 0 . 1 1 1 0 t square wave pulse duration[sec] 1 z ( t ) , t h e r m a l r e s p o n s e j c 0 . 0 1 0 . 1 1 d = 0 .5 0 . 2 0 . 1 0 . 0 5 0 . 0 2 0 . 0 1
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 5 / 8 win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics wfp3205 product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet fig. 9 gate test circuit & waveform fig.1 0 resistive switching test circuit & waveform fig.1 1 unclamped inductive switching test circuit & waveform 1 2 v 2 0 0 n f 3 m a 3 0 0 n f 5 0 k v g s d u t v g s v d s 1 0 v c h a rg e same type a s d u t q g s q g d q g 1 0 v r g v g s v d s r l v d s v g s d u t 9 0 % 1 0 % t d (o n ) t r t d (o ff) t o n t o f f t f v d d 1 0 v r g l i d v d d e a s = b v d s s b v d s s - v d d 1 2 l i a s 2 d u t b v d s s i a s i t d ( ) t i m e v d s ( ) t t p t p v d s v d d
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 6 / 8 win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics wfp3205 product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet fig.1 2 peak diode recovery dv/dt test circuit & waveform v d s d u t i s d l driver s am e type a s d u t r g v g s v d d dv/dt controlled by r g i conteolled by pulse period s d v g s (driver) d = gate pulse width gate pulse period 1 0 v i s d i ,body diode forward current f m (dut) v d s i s d (dut) i r m di/dt body diode reverse current body diode recovery dv/dt v d d body diode forward voltage drop v s d
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 7 / 8 win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics wfp3205 product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet to-220 package dimension e q 7 a q 1 p e c l l 2 d 2 d b e b f m i n m a x a 4 . 3 0 4 . 7 0 b 1 . 1 0 1 . 4 0 b 0 . 7 0 0 . 9 5 c 0 . 4 0 0 . 6 5 d 1 5 . 2 1 6 . 2 d 2 9 . 0 0 9 . 4 0 e 9 . 7 0 1 0 .1 0 e 2 . 3 9 2 . 6 9 f 1 . 2 5 1 . 4 0 l 1 2 .6 0 1 3 .6 0 l 2 2 . 8 0 3 . 2 0 q 2 . 6 0 3 . 0 0 q 1 2 . 2 0 2 . 6 0 p 3 . 5 0 3 . 8 0 u n it:m m
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 8 / 8 win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics wfp3205 product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet note: note: note: note: 1. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2. please do not exceed the absolute maximum ratings of the device when circuit designing. 3. winsemi microelectronics co., ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. contact: contact: contact: contact: winsemi microelectronics co., ltd. add:futian district, shenzhen tian an cyber tech plaza two east wing 1002 post code : 518040 tel : +86-755-8250 6288 fax : +86-755-8250 6299 web site : www.winsemi.com
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