final datasheet please read the important notice and warnings at the end of this document rev. 2.0 , 2017 - 05 - 23 IDH12G65C6 6 th generation coolsic? 650v sic schottky d iode the coolsic? generation 6 (g6) is the leading edge technology from infineon for the sic schottky barrier diodes. the infineon proprietary innovative g5 technology was enhanced in g6 by introducing further advancements like a novel schottky metal system. the result is a family of product s with improved efficiency over all load conditions, resulting from a lower figure of merit ( q c x v f ). the coolsic? schottky diode 650 v g6 has been designed to complement our 600 v and 650 v coolmos? 7 families, meeting the most stringent application requ irements in this voltage range. table 1 key performance parameters parameter value unit v rrm 650 v q c ( v r = 400 v) 1 7 .1 nc e c ( v r = 400 v) 3.2 j i f ( t c 14 0 c , d = 1 ) 1 2 a v f ( i f = 12 a, t j = 25 c) 1.25 v table 2 package information type / ordering code package marking idh12 g65c6 pg - to220 - 2 d12 65c6 features ? best in class forward voltage (1.25 v) ? best in class figure of merit ( q c x v f ) ? high dv/ dt ruggedness (150 v/ns) benefits ? system effic iency improvement ? system cost and size savings due to the reduced cooling requirements ? enabling higher frequency and increased power density potential a pplications ? power factor correction in smps ? solar inverter ? uninterruptible power supply product validation ? qualified for industrial applications according to the relevant test s o f jedec (j - std20 and jesd22) pg - to220 - 2 1 2 case 1) cathode 2) anode
final datasheet 2 rev. 2.0 , 2017 - 05 - 23 6 th generation coolsic tm IDH12G65C6 table of content 1 maximum ratings ................................ ................................ ................................ ............................... 3 2 thermal characteristics ................................ ................................ ................................ ..................... 3 3 el ectrical characteristics ................................ ................................ ................................ .................... 4 3.1 static characteristics ................................ ................................ ................................ ............................... 4 3.2 ac characteristics ................................ ................................ ................................ ................................ .... 4 4 diagrams ................................ ................................ ................................ ................................ ............ 5 5 simplified forward characteristic ................................ ................................ ................................ ....... 7 6 package outlines ................................ ................................ ................................ ................................ 8
final datasheet 3 rev. 2.0 , 2017 - 05 - 23 6 th generation coolsic tm IDH12G65C6 1 maximum ratings table 3 maximum ratings parameter symbol values unit note/test condition min. typ. max. continuous forward current i f C C 1 2 a t c 1 4 0 c, d = 1 C C 1 5 t c 1 25 c, d = 1 C C 2 7 t c 25 c, d = 1 surge - repetitive forward current, sine halfwave 1 i f,rm C C 53 t c = 25 c, t p = 10 ms surge non - repetitive forward current, sine halfwave i f,sm C C 64 t c = 25 c, t p = 10 ms C C 5 1 t c = 150 c, t p = 10 ms non - repetitive peak forward current i f,max C C 63 0 t c = 25 c, t p = 10 s i2t value i2dt C C 21 a2s t c = 25 c, t p = 10 ms C C 13 t c = 150 c, t p = 10 ms repetitive peak reverse voltage v rrm C C 650 v t c = 25 c diode dv/dt ruggedness dv/dt C C 15 0 v/ns v r = 0..480 v power dissipation p tot C C 81 w t c = 25c , r thjc,max operating and storage temperature t j t stg - 55 C 175 c C mounting torque C C C 7 0 ncm m3 screw 2 thermal characteristics table 4 thermal characteristics ( pg - to - 220 - 2 ) parameter symbol values unit note/test condition min. typ. max. thermal resistance, junction - case r thjc C 1. 1 1.9 k/w C thermal resistance, junction - ambient r thja C C 62 leaded soldering temperature, wavesoldering only allowed at leads t sold C C 260 c 1.6 mm (0.063 in.) from case for 10 s 1 the surge - repetitive forward current test was performed with 1000 pulses (half - wave rectified sine with the 10 ms period).
final datasheet 4 rev. 2.0 , 2017 - 05 - 23 6 th generation coolsic tm IDH12G65C6 3 electrical characteristics 3.1 static characteristics table 5 static characteristics parameter symbol values unit note/test condition min. typ. max. dc blocking voltage v dc 650 C C v t j = 2 5 c diode forward voltage v f C 1.25 1.35 i f = 1 2 a, t j = 25 c C 1.5 C i f = 12 a, t j = 150 c reverse current i r C 1. 2 40 a v r = 420 v, t j = 25 c C 40 C v r = 420 v, t j = 125 c C 92 C v r = 420 v, t j = 150 c 3.2 ac characteristics table 6 ac characteristics parameter symbol values unit note/test condition min. typ. max. total capacitive charge q c C 1 7 .1 C nc v r = 400 v, t j = 150 c , di/dt = 200 a/s, i f i f,max total capacitance c C 594 C pf v r = 1 v , f = 1 mhz , t j = 25 c C 35 C v r = 300 v, f = 1 mhz , t j = 25 c C 34 C v r = 600 v, f = 1 mhz , t j = 25 c
final datasheet 5 rev. 2.0 , 2017 - 05 - 23 6 th generation coolsic tm IDH12G65C6 4 diagrams p tot = f( t c ) i f = f( t c ); r thjc,max ; t j d = t p / t figure 1 power dissipation figure 2 max. forward current i f = f(v f ) ; t p = 1 0 s; parameter: t j i f = f(v f ) ; t p = 1 0 s; parameter: t j figure 3 typ. forward characteristics figure 4 typ. forward characteristics in surge current
final datasheet 6 rev. 2.0 , 2017 - 05 - 23 6 th generation coolsic tm IDH12G65C6 q c = f(di f /dt ); t j = 150 c; v r = 400 v; i f i f,max i r = f(v r ); parameter: t j figure 5 typ. cap. charge vs. current slope figure 6 typ. reverse current vs. reverse voltage z th,jc = f( t p ) ; parameter: d = t p / t c = f( v r ); t j = 25 c; f = 1 mhz figure 7 max . transient thermal impedance figure 8 typ. capacitance vs. reverse voltage
final datasheet 7 rev. 2.0 , 2017 - 05 - 23 6 th generation coolsic tm IDH12G65C6 tres hold voltage ( v th ): differential resistance ( r diff ): v f = f( i f ) t j [c]; - 55 c t j i f 12 equivalent forward current curve figure 11 mathematical equation e c = f( v r ) figure 9 typ. capacitance stored energy 5 simplified forward characteristic th diff ? ? ? ? 2 - 5 - 6 - 2 0 1 93 . 3 10 45 . 7 10 1.03 ? ? ? ? ? ? ? ? ? ? ? ? c b a c t b t a t r j j j diff f diff th f i r v v ? ? ? ? ? ? ? v 766 . 0 001 . 0 ? ? ? ? j j th t t v
final datasheet 8 rev. 2.0 , 2017 - 05 - 23 6 th generation coolsic tm IDH12G65C6 6 package outlines figure 12 outlines of the package pg - to220 - 2 , dimensions in mm/inches
final datasheet 9 rev. 2.0 , 2017 - 05 - 23 6 th generation coolsic tm idh12 g65c6 revision history major changes since the last revision revision date subject (major changes since last revision) 2.0 2017 - 05 - 23 release of final version
published by infineon technologies ag 81726 mnchen , germany ? 2017 infineon technologies ag. all rights reserved. do you have a question about this document? email: erratum@infineon.com document reference important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereb y disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non - infringement of intellectual property rights of any third party. in addition, any information given in this document is subject to customers c ompliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customers products and any use of the product of infineon technologies in customers applications. the data contained in this document is exclusively intended for technically trained staff. it is the responsibility of customers technical departments to evaluate the suitability of the product for the intended application and the completeness of the prod uct information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies o ffice ( www.infineon.com ). w arnings due to technical requirements products may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly approved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can rea sonably be expected to result in personal injury. edition 2017 - 05 - 23 other trademarks all referenced product or service names and trademarks are the property of their respective owners. owners.
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