? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 250 v v dgr t j = 25 c to 150 c, r gs = 1m 250 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 90 a i dm t c = 25 c, pulse width limited by t jm 360 a i a t c = 25 c 45 a e as t c = 25 c 3 j p d t c = 25 c 735 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms t = 1 minute 2500 v~ i isol 1ma t = 1 second 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 250 v v gs(th) v ds = v gs , i d = 3ma 2.0 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 2.5 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 33 m linear l2 tm power mosfet w/extended fbsoa n-channel enhancement mode guaranteed fbsoa avalanche rated IXTN90N25L2 v dss = 250v i d25 = 90a r ds(on) 33m ds100103(1/09) features ? designed for linear operation ? international standard package guaranteed fbsoa at 75c ? avalanche rated ? molding epoxy meets ul94 v-0 flammability classification ? minibloc with aluminium nitride isolation applications ? programmable loads ? current regulators ? dc-dc converters ? battery chargers ? dc choppers ? temperature and lighting controls advantages ? easy to mount ? space savings ? high power density preliminary technical information either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal. minibloc, sot-227 e153432 g d s s g = gate d = drain s = source
ixys reserves the right to change limits, test conditions, and dimensions. IXTN90N25L2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. sot-227b (ixtn) outline (m4 screws (4x) supplied) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 35 50 65 s c iss 23 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 2140 pf c rss 360 pf t d(on) 50 ns t r 175 ns t d(off) 40 ns t f 160 ns q g(on) 640 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 125 nc q gd 385 nc r thjc 0.17 c/w r thcs 0.05 c/w safe operating area specification symbol test conditions min. typ. max. soa v ds = 250v, i d = 1.4a, t c = 75c, tp = 3s 350 w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 90 a i sm repetitive, pulse width limited by t jm 360 a v sd i f = 45a, v gs = 0v, note 1 1.5 v t rr 266 ns i rm 23 a q rm 3.0 c resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. i f = 45a, -di/dt = 100a/ s v r = 80v, v gs = 0v
? 2009 ixys corporation, all rights reserved IXTN90N25L2 fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ds - volts i d - amperes v gs = 20v 12v 10v 7 v 5 v 6 v 8 v 9 v fig. 2. extended output characteristics @ 25oc 0 30 60 90 120 150 180 210 240 270 300 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 20v 14v 12v 7 v 6 v 8 v 9 v 10 v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 80 90 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v ds - volts i d - amperes v gs = 20v 12v 10v 9v 5 v 7v 6v 8 v fig. 4. r ds(on) normalized to i d = 45a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 90a i d = 45a fig. 5. r ds(on) normalized to i d = 45a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 20 40 60 80 100 120 140 160 180 200 220 240 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 100 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes ixys ref: t_90n25l2(9r)01-20-09-a
ixys reserves the right to change limits, test conditions, and dimensions. IXTN90N25L2 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 0 20 40 60 80 100 120 140 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 280 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 700 800 900 1000 q g - nanocoulombs v gs - volts v ds = 125v i d = 45a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2009 ixys corporation, all rights reserved IXTN90N25L2 ixys ref: t_90n25l2(9r)01-20-09-a fig. 14. forward-bias safe operating area @ t c = 75oc 1 10 100 1,000 1 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc 100ms fig. 13. forward-bias safe operating area @ t c = 25oc 1 10 100 1,000 1 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc 100ms
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