infrared led chip high speed gaalas/gaalas 1. material substrate gaalas (n type) removed epitaxial layer gaalas (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side gold alloy 3. electro-optical parameter symbol min typ max unit condition characteristics v f(1) 1.1 v if=10ma v f(2) 1.5 v if=250ma reverse voltag e v r 5 v ir=10ua power p o 11.0 mw if=250ma p 870 nm if=50ma ? 45 nm if=50ma rise time tr 15 ns fall time tf 6.3 ns note : led chip is mounted on to-18 gold header without resin coating. 4. mechanical dat a (a) emission area --------------------- 58.1mil x 58.1mil (b) bottom area --------------------- 59.1mil x 59.1mil (c) bonding pad --------------------- 128um (d) chip thickness --------------------- 7mil (e) junction height --------------------- 6.4mil epi epi p n p side electrode n side electrode eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr OPA8760EDD wavelength f orward voltag e auk corp. (e) (d)
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