si9936bdy vishay siliconix new product document number: 72521 s-32411?rev. b, 24-nov-03 www.vishay.com 1 dual n-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 30 0.035 @ v gs = 10 v 6.0 30 0.052 @ v gs = 4.5 v 4.9 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 n-channel mosfet d 1 g 1 s 1 n-channel mosfet d 2 g 2 s 2 ordering information: si9936bdy?e3 si9936bdy-t1?e3 (with t ape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 6.0 4 5 continuous drain current (t j = 150 c) a t a = 70 c i d 4.8 3 6 a pulsed drain current i dm 40 a continuous source current (diode conduction) a i s 1.7 0 9 maximum power dissipation a t a = 25 c p d 2.0 1.1 w maximum power dissipation a t a = 70 c p d 1.3 0.7 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit a t 10 sec r 53 62 5 maximum junction-to-ambient a steady state r thja 92 110 c/w maximum junction-to-foot (drain) steady state r thjf 30 40 c/w notes a. surface mounted on 1? x 1? fr4 board.
si9936bdy vishay siliconix new product www.vishay.com 2 document number: 72521 s-32411?rev. b, 24-nov-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 40 a drain - s on - state resistance a r ds(on) v gs = 10 v, i d = 6 a 0.028 0.035 d ra i n- s ource o n- st a t e r es i s t ance a r ds(on) v gs = 4.5 v, i d = 4.9 a 0.041 0.052 forward transconductance a g fs v ds = 15 v, i d = 6 a 12 s diode forward voltage a v sd i s = 1.7 a, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g 8.6 13 gate-source charge q gs v ds = 15 v, v gs = 10 v, i d = 6 a 1.8 nc gate-drain charge q gd 1.5 gate resistance r g f = 1 mhz 2.8 turn-on delay time t d(on) 10 15 rise time t r v dd = 15 v, r l = 15 15 25 turn-off delay time t d(off) v dd = 15 v , r l = 15 i d 1 a, v gen = 10 v, r g = 6 25 40 ns fall time t f 10 15 source-drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s 20 40 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 5 10 15 20 25 30 35 40 0123456 0 5 10 15 20 25 30 35 40 012345 v gs = 10 thru 6 v t c = ? 55 c 125 c 4 v 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 5 v 3 v
si9936bdy vishay siliconix new product document number: 72521 s-32411?rev. b, 24-nov-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ? on-resistance ( r ds(on) ) 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0246810 0.00 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 25 30 35 40 v ds ? drain-to-source voltage (v) c rss c oss c iss v ds = 15 v i d = 6 a i d ? drain current (a) v gs = 10 v i d = 6 a v gs = 10 v v gs = 4.5 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) 0.00 0.02 0.04 0.06 0.08 0.10 0246810 i d = 6 a 40 10 1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s t j = 25 c t j = 150 c
si9936bdy vishay siliconix new product www.vishay.com 4 document number: 72521 s-32411?rev. b, 24-nov-03 typical characteristics (25 c unless noted) 0 30 50 10 20 power (w) single pulse power time (sec) 40 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 ? 0.8 ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold v oltage variance (v) v gs(th) t j ? temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 92 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1 100 600 10 10 ? 1 10 ? 2 10 ? 3 safe operating area v ds ? drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 t a = 25 c single pulse ? drain current (a) i d p(t) = 10 dc 0.1 i dm limited i d(on) limited r ds(on) limited bv dss limited p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 p(t) = 0.0001
si9936bdy vishay siliconix new product document number: 72521 s-32411?rev. b, 24-nov-03 www.vishay.com 5 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance
|
