? semiconductor components industries, llc, 2008 august, 2008 ? rev. 0 1 publication order number: NTUD3170NZ/d NTUD3170NZ small signal mosfet 20 v, 220 ma, dual n ? channel, 1.0 mm x 1.0 mm sot ? 963 package features ? dual n ? channel mosfet ? offers a low r ds(on) solution in the ultra small 1.0 x 1.0 mm package ? 1.5 v gate voltage rating ? ultra thin profile (< 0.5 mm) allows it to fit easily into extremely thin environments such as portable electronics ? this is a pb ? free device applications ? general purpose interfacing switch ? optimized for power management in ultra portable equipment ? analog switch maximum ratings (t j = 25 c unless otherwise specified) parameter symbol value unit drain ? to ? source voltage v dss 20 v gate ? to ? source voltage v gs 8 v continuous drain current (note 1) steady state t a = 25 c i d 220 ma t a = 85 c 160 t 5 s t a = 25 c 280 power dissipation (note 1) steady state t a = 25 c p d 125 mw t 5 s 200 pulsed drain current t p = 10 s i dm 800 ma operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) (note 2) i s 200 ma lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface ? mounted on fr4 board using the minimum recommended pad size, 1 oz cu. 2. pulse test: pulse width 300 s, duty cycle 2% http://onsemi.com top view d 1 g 2 s 2 s 1 g 1 6 5 4 1 2 3 d 2 pinout: sot ? 963 d1 s1 g1 n ? channel mosfet see detailed ordering and shipping information in the package dimensions sect ion on page 2 of this data sheet. ordering information v (br)dss r ds(on) max i d max 20 v 1.5 @ 4.5 v 2.0 @ 2.5 v 0.22 a 3.0 @ 1.8 v 4.5 @ 1.5 v sot ? 963 case 527ad marking diagram 3 = specific device code m = date code = pb ? free package 3 m 1 d2 s2 g2
NTUD3170NZ http://onsemi.com 2 thermal resistance ratings parameter symbol max unit junction ? to ? ambient ? steady state (note 3) r ja 1000 c/w junction ? to ? ambient ? t = 5 s (note 3) 600 3. surface ? mounted on fr4 board using the minimum recommended pad size, 1 oz cu. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 20 v zero gate voltage drain current i dss v gs = 0 v, v ds = 5 v t j = 25 c 50 na t j = 85 c 200 na v gs = 0 v, v ds = 16 v t j = 25 c 100 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 5.0 v 100 na on characteristics (note 4) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.4 1.0 v drain ? to ? source on resistance r ds(on) v gs = 4.5 v, i d = 100 ma 0.75 1.5 v gs = 2.5 v, i d = 50 ma 1.0 2.0 v gs = 1.8 v, i d = 20 ma 1.4 3.0 v gs = 1.5 v, i d = 10 ma 1.8 4.5 v gs = 1.2 v, i d = 1.0 ma 2.8 forward transconductance g fs v ds = 5.0 v, i d = 125 ma 0.48 s source ? drain diode voltage v sd v gs = 0 v, i s = 10 ma 0.6 1.0 v capacitances input capacitance c iss f = 1.0 mhz, v gs = 0 v v ds = 15 v 12.5 pf output capacitance c oss 3.6 reverse transfer capacitance c rss 2.6 switching characteristics, v gs = 4.5 v (note 4) turn ? on delay time t d(on) v gs = 4.5 v, v dd = 10 v, i d = 200 ma, r g = 2.0 16.5 ns rise time t r 25.5 turn ? off delay time t d(off) 142 fall time t f 80 4. switching characteristics are independent of operating junction temperatures. ordering information device package shipping ? NTUD3170NZt5g sot ? 963 (pb ? free) 8000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NTUD3170NZ http://onsemi.com 3 typical characteristics figure 1. on ? region characteristics figure 2. transfer characteristics v ds , drain ? to ? source voltage (v) v gs , gate ? to ? source voltage (v) 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 3 2 1 0 0 0.1 0.2 0.3 0.4 figure 3. on ? resistance vs. gate voltage figure 4. on ? resistance vs. drain current and gate voltage v gs , gate ? to ? source voltage (v) i d , drain current (a) 5 4 3 2 1 0 0 1 2 3 4 0.35 0.30 0.40 0.25 0.20 0.15 0.10 0.05 0 0.25 0.50 0.75 1.00 1.25 1.50 figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current vs. voltage t j , junction temperature ( c) v ds , drain ? to ? source voltage (v) 125 100 75 50 25 0 ? 25 ? 50 0.50 0.75 1.00 1.25 1.50 1.75 20 16 12 8 4 0 10 100 1000 10,000 i d , drain current (a) i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance (normalized) i dss , leakage (na) v gs = 2 thru 5 v t j = 25 c 1.8 v 1.6 v 1.4 v 1.2 v t j = 25 c t j = 125 c t j = ? 55 c v ds 5 v i d = 220 ma t j = 25 c t j = 25 c v gs = 2.5 v v gs = 4.5 v v gs = 4.5 v i d = 100 ma v gs = 0 v t j = 125 c t j = 150 c 150
NTUD3170NZ http://onsemi.com 4 typical characteristics figure 7. capacitance variation figure 8. resistive switching time variation vs. gate resistance gate ? to ? source and drain ? to ? source voltage (v) r g , gate resistance ( ) 20 15 10 5 0 0 2.50 5.00 7.50 10.0 12.5 15.0 20.0 100 10 1 1 10 100 1000 figure 9. diode forward voltage vs. current v sd , source ? to ? drain voltage (v) 1 0.8 0.6 0.4 0.2 0 0 0.025 0.050 0.075 0.100 0.125 0.175 0.200 c, capacitance (pf) t, time (ns) i s , source current (a) 17.5 v gs = 0 v t j = 25 c c iss c oss c rss v dd = 10 v i d = 200 ma v gs = 4.5 v t d(off) t d(on) t r t f 0.150 v gs = 0 v t j = 25 c
NTUD3170NZ http://onsemi.com 5 package dimensions *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 0.35 0.014 0.20 0.008 mm inches scale 20:1 0.90 0.0354 0.35 0.014 0.20 0.008 dim min nom max millimeters a 0.34 0.37 0.40 b 0.10 0.15 0.20 c 0.07 0.12 0.17 d 0.95 1.00 1.05 e 0.75 0.80 0.85 e 0.35 bsc l 0.05 0.10 0.15 0.95 1.00 1.05 h e e b e d c a l c 0.08 h e 6x a 12 3 4 5 6 0.004 0.006 0.008 0.003 0.005 0.007 0.037 0.039 0.041 0.03 0.032 0.034 0.014 bsc 0.002 0.004 0.006 0.037 0.039 0.041 min nom max inches notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. a b b c sot ? 963 case 527ad ? 01 issue d on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 NTUD3170NZ/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
|
