cdi minimum maximum maximum maximum reverse maximum figure type breakdown forward forward leakage current capacitance @ number voltage voltage voltage v r = 0 volts number (2) f = 1.0 mh z v br @ 10 av f @ 1 ma v f @ i f 1 r @ v r c t volts volts volts @ ma na volts pico farads cd2810 20 0.41 1.0 @ 35 100 15 1.2 1 cd5711 70 0.41 1.0 @15 200 50 2.0 2 cd5712 20 0.41 1.0 @ 35 150 16 1.2 1 cd6857 20 0.35 0.75 @ 35 150 16 4.5 2 cd6858 70 0.36 0.65 @ 15 200 50 4.5 2 0.27 @ 0.1 100 1 CD6916 40 0.34 0.34 @ 1.0 200 20 5 2 (2) 0.47 @ 10.0 500 40 notes: (1) effective minority carrier lifetime ( ) is 100 pico seconds (2) CD6916 v br measured @ 500 nanoamps maximum ratings operating temperature: -55c to +125c storage temperature: -65c to +150c ? 1n5711 available in janhc and jankc per mil-prf-19500/444 ? 1n5712 available in janhc and jankc per mil-prf-19500/445 ? schottky barrier diode chips for general purpose application ? silicon dioxide passivated ? compatible with all wire bonding and die attach techniques, with the exception of solder reflow design data metallization: top: (anode)...................... ..al back: (cathode)................. au o al thickness .................25,000 a min o gold thickness ... ..........4,000 a min chip thickness ............. .........10 mils tolerances: all dimensions + 2 mils, except anode pad where tolerance is + 0.5 mils. backside is cathode figure 2 backside is cathode figure 1 cd2810 cd5711 cd5712 cd6857 cd6858 CD6916 electrical characteristics @ 25c, unless otherwise speci?ed 22 corey street, melrose, massachusetts 02176 phone (781) 665-1071 fax (781) 665-7379 website: http://www.cdi-diodes.com e-m ail: mail@cdi-diodes.com 15 mils 5.5 mils 15 mils 3 mils
cd2810, cd5711, cd5712, cd6857, cd6858 and CD6916 0 .2 .4 .6 .8 1.0 1.2 v f C forward voltage (v) figure 1. i-v curve showing typical forward voltage variation with temperature for the cd5712 and cd2810 schottky diodes. 0 .2 .4 .6 .8 1.0 1.2 v f C forward voltage (v) figure 3. i-v curve showing typical forward voltage variation with temperature for schottky diode cd5711. 0 5.0 10 15 20 25 30 v r C reverse voltage (v) (pulsed) figure 2. cd5712 and cd2810 typical variation of reverse current (i r ) vs. reverse voltage (v r ) at various temperatures. 01020 30405060 v r C reverse voltage (v) (pulsed) figure 4. cd5711 typical variation of reverse current (i r ) vs. reverse voltage (v r ) at various temperatures. .1 1.0 10 100 i f C forward current (ma) (pulsed) figure 5. typical dynamic resistance (r d ) vs. forward current (i f ). i f C forward current (ma) i f C forward current (ma) i r C reverse current (na) i r C reverse current (na) r d C dynamic resistance (!!) 100 10 1.0 .1 .01 100,000 10,000 1000 100 10 1 50 10 5 1 .5 .1 .05 .01 1000 100 10 1 10,000 1000 100 10 1.0
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