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1N5400 170M3388 FT256I 00BGC ADAU1381 STBN07F DS600 68100
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  p p j q546 4 a july 14,2015 - rev.00 page 1 6 0 v n - c hannel enhancement mode mosfet v oltage 6 0 v c urrent 55 a dfn5060 - 8l f eatures ? r ds(on ) , v gs @ 10 v , id @ 20 a < 9.5m ? ? r ds(on) , v gs @ 4.5 v, id@ 10 a< 10.8m ? ? high switching speed ? improved dv/dt capability ? low reverse transfer capacitance ? lead free in compliance wit h eu rohs 2011/65/eu directive . ? green molding compound as per iec61249 std. (halogen free) m echanical data ? case: dfn5060 - 8l package ? terminals: solderable per mil - std - 750, method 2026 ? approx . weight: 0.0028 ounces, 0.08 grams ? marking: q54 6 4 a m aximum r atings and t hermal c haracteristics (t a =25 o c unless otherwise noted) parameter symbol limit units drain - source voltage v ds 60 v gate - source voltage v gs + 2 0 v continuous drain current t c =25 o c i d 55 a t c = 100 o c 36 pulsed drain current (note 1 ) t c =25 o c i dm 125 power dissipation t c =25 o c p d 60 w t c = 100 o c 24 continuous drain current t a =25 o c i d 10 a t a = 70 o c 8 a power dissipation t a =25 o c p d 2.0 w power dissipation t a = 70 o c 1.3 single pulse avalanche energy (note 6 ) e as 97 mj operating junction and storage temperature range t j ,t stg - 55~1 50 o c typical thermal r esistance (note 4,5 ) junction to case r jc o c /w j unction to ambient r ja 6 2 .5 ? limited only by maximum junction temperature
p p j q546 4 a july 14,2015 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage bv d ss v gs = 0 v,i d = 25 0ua 6 0 - - v gate threshold voltage v gs(th) v ds =v gs , i d = 250 ua 1.0 1. 35 2.5 v drain - source on - state resistance r ds(on) v gs = 10 v,i d = 2 0 a - 8. 6 9.5 m gs = 4.5 v,i d = 1 0 a - 9 . 2 10.8 zero gate voltage drain current i dss v ds =6 0 v,v gs =0v - - 1.0 u a gate - source leakage current i gss v gs = + 20 v,v ds =0v - - + 100 n a dynamic (note 7 ) total gate charge q g v ds = 3 0 v, i d = 1 0 a, v gs = 10v (note 1,2 ) - 7 0 - nc gate - source charge q gs - 8.6 - gate - drain charge q gd - 9.2 - input capacitance ciss v ds = 2 5 v, v gs = 0 v , f=1.0mhz - 3 891 - pf output capacitance coss - 2 38 - reverse transfer capacitance crss - 1 07 - turn - on delay time td (on) v dd = 15 v, i d = 1 0 a, v g s = 10v, r g = 3.3 (note 1,2 ) - 1 2 - ns turn - on rise time t r - 75 - turn - off delay time td (off) - 78 - turn - off fall time t f - 14 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 55 a diode forward voltage v sd i s = 1 a,v gs =0v - 0. 66 1.2 v notes : 1. pulse width < 300us, duty cycle < 2% 2. essentially independent of operating temperature typical characteristics . 3. repetitive rating, pulse width limited by junction temperature tj(max)=150c. ratings are based on low frequency and duty cycl es to keep initial t j =25c. 4. the maximum current rating is package limited. 5. r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. m ount ed on a 1 inch 2 with 2oz. square pad of copper . 6. the test condition is l=0.1mh, i as = 44 a , v dd = 25v, v gs =10v 7. guaranteed by design, not subject to product ion testing.
p p j q546 4 a july 14,2015 - rev.00 page 3 t ypical characteristic curves fig.1 output characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 on - resist a nce vs. junction temperature fig. 5 on - resistance variation with vgs. fig. 6 source - drain diode forward voltage
p p j q546 4 a july 14,2015 - rev.00 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 breakdown voltage variation vs. temperature fi g. 9 threshold voltage variation with temperature fig. 10 capacitance vs. drain - source voltage fig. 11 maximum safe operating area
p p j q546 4 a july 14,2015 - rev.00 page 5 t ypical characteristic curves fig. 12 normalized transient thermal impedance vs. pulse width
p p j q546 4 a july 14,2015 - rev.00 page 6 part no packing code version packaging information & mounting pad layout dfn5060 - 8l dimension u nit: mm dfn5060 - 8l pad latout u nit: mm part n o packing code package type packing type marking ver sion pjq5464 a_r 2 _00001 dfn5060 - 8l 3000 pcs / 13 reel q5464 a halogen free
p p j q546 4 a july 14,2015 - rev.00 page 7 disclaimer


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Ozdisan Elektronik

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PJQ5464A_R2_00001
PanJit Group MOSFET DIS.55A 60V N-CH DFN5060-8L SMT RFQ
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