dmn2400ufd document number: ds35475 rev. 4 - 2 1 of 6 www.diodes.com july 2012 ? diodes incorporated dmn2400ufd source body diode gate protection diode gate drain n-channel enhancement mode mosfet product summary v (br)dss r ds(on) package i d t a = +25c 20v 0.6? @ v gs = 4.5v x1-dfn1212-3 0.9a 0.8? @ v gs = 2.5v 0.7a 1.0? @ v gs = 1.8v 0.5a 1.6? @ v gs = 1.5v 0.3a description this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? power management functions ? battery operated systems and solid-state relays ? load switch features ? low on-resistance ? very low gate threshold voltage, 1.0v max ? low input capacitance ? fast switching speed ? esd protected gate ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: x1-dfn1212-3 ? case material: molded plastic. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.005 grams (approximate) ordering information (note 4) part number case packaging dmn2400ufd -7 x1-dfn1212-3 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com for more in formation about diodes incorpor ated?s definitions of halogen- and antimony-free, "gree n" and lead-free. ? 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 code u v w x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view bottom view equival ent circuit pin-out top view esd protected k24 ym k24 = product type marking code ym = date code marking y = year (ex: y = 2011) m = month (ex: 9 = september)
dmn2400ufd document number: ds35475 rev. 4 - 2 2 of 6 www.diodes.com july 2012 ? diodes incorporated dmn2400ufd maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 12 v continuous drain current (note 6) v gs = 4.5v steady state t a = +25c t a = +70c i d 0.9 0.7 a continuous drain current (note 6) v gs = 2.5v steady state t a = +25c t a = +70c i d 0.7 0.5 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm 3.0 a maximum body diode forward current (note 6) i s 0.8 a thermal characteristics characteristic symbol value units total power dissipation (note 5) p d 0.4 w thermal resistance, junction to ambient (note 5) steady state r ja 280 c/w total power dissipation (note 6) p d 0.8 w thermal resistance, junction to ambient (note 6) steady state r ja 140 c/w thermal resistance, junction to case (note 6) r jc 112 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current t j = +25c i dss ? ? 80 100 na v ds = 4.5v, v gs = 0v v ds = 20v, v gs = 0v gate-source leakage i gss ? ? 1.0 a v gs = 4.5v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) 0.45 ? 1.0 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? 0.35 0.6 ? v gs = 4.5v, i d = 200ma ? 0.45 0.8 v gs = 2.5v, i d = 200ma ? 0.6 1.0 v gs = 1.8v, i d = 100ma ? 0.7 1.6 v gs = 1.5v, i d = 50ma forward transfer admittance |y fs | ? 1.4 ? s v ds = 3v, i d = 200ma diode forward voltage v sd ? 0.7 1.2 v v gs = 0v, i s = 500ma, dynamic characteristics (note 8) input capacitance c iss ? 37.0 ? pf v ds =16v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 5.7 ? pf reverse transfer capacitance c rss ? 4.2 ? pf gate resistance r g ? 68 ? ? v ds = 0v, v gs = 0v, total gate charge q g ? 0.5 ? nc v gs = 4.5v, v ds = 10v, i d = 250ma gate-source charge q g s ? 0.07 ? nc gate-drain charge q g d ? 0.1 ? nc turn-on delay time t d ( on ) ? 4.06 ? ns v dd = 10v, v gs = 4.5v, r l = 47 ? , r g = 10 ? , i d = 200ma turn-on rise time t r ? 7.28 ? ns turn-off delay time t d ( off ) ? 13.74 ? ns turn-off fall time t f ? 10.54 ? ns notes: 5. device mounted on fr-4 pc board, with minimum recommended pad layout, single sided. 6. device mounted on fr-4 substrate pc board, 2oz copper, wi th thermal vias to bottom layer 1inch square copper plate. 7 .short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to production testing.
dmn2400ufd document number: ds35475 rev. 4 - 2 3 of 6 www.diodes.com july 2012 ? diodes incorporated dmn2400ufd 0 0.5 1.0 1.5 2.0 01 2 345 fig. 1 typical output characteristics v , drain-source voltage (v) ds i, d r ai n c u r r e n t (a) d v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 4.5v gs v = 1.2v gs v = 1.8v gs 0 0.5 1.0 1.5 0 0.5 1 1.5 2 2.5 3 i, d r ain c u r r en t (a) d fig. 2 typical transfer characteristics v , gate source voltage (v) gs v = 5v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a 0 0.4 0.8 1.2 1.6 2.0 0 0.4 0.8 1.2 1.6 2 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , drain-source on-resistance ( ) ds(on) v = 1.8v gs v = 4.5v gs v = 2.5v gs v = 1.5v gs v = 5.0v gs 0 0.2 0.4 0.6 0.8 0 0.4 0.8 1.2 1.6 i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0.6 0.8 1.0 1.2 1.4 1.6 r , d r ain-s o u r c e on-resistance (normalized) ds(on) v = 2.5.v i = 500ma gs d v = 4.5v i = 1.0a gs d 0 0.2 0.4 0.6 0.8 r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j v = 4.5v i = 1.0a gs d v = 2.5v i = 500ma gs d
dmn2400ufd document number: ds35475 rev. 4 - 2 4 of 6 www.diodes.com july 2012 ? diodes incorporated dmn2400ufd 0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 250a d i = 1ma d 0 0.4 0.8 1.2 1.6 0 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current 0.2 i, s o u r c e c u r r en t (a) s t = 25c a 0 10 20 30 40 50 60 0 5 10 15 20 fig. 9 typical capacitance v , drain-source voltage (v) ds c , c a p a c i t a n c e (p f ) f = 1mhz c iss c oss c rss 0.1 1 10 100 1,000 2 4 6 8 10 12 14 16 18 20 fig. 10 typical drain-source leakage current vs. drain-source voltage v , drain-source voltage (v) ds i, d r ain-s o u r c e leaka g e c u r r en t (na) dss t = 25c a t = 85c a t = 125c a t = 150c a t = -55c a 0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 0.5 0.6 fig. 11 gate-charge characteristics q , total gate charge (nc) g v , gate-source voltage (v) gs v = 10v i = 250ma ds d
dmn2400ufd document number: ds35475 rev. 4 - 2 5 of 6 www.diodes.com july 2012 ? diodes incorporated dmn2400ufd 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 fig. 12 transient thermal response t , pulse duration time (s) 1 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.5 d = 0.9 t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 261c/w ja ja p(pk) t 1 t 2 0.000001 package outline dimensions suggested pad layout x1-dfn1212-3 dim min max typ a 0.47 0.53 0.50 a1 0 0.05 0.02 a3 - - 0.13 b 0.27 0.37 0.32 b1 0.17 0.27 0.22 d 1.15 1.25 1.20 e 1.15 1.25 1.20 e - - 0.80 l 0.25 0.35 0.30 all dimensions in mm dimensions value (in mm) c 0.80 x 0.42 x1 0.32 y 0.50 y1 0.50 y2 1.50 a1 a3 d e e b a b1 (2x) l y2 x x1 (2x) y y1 (2x) c
dmn2400ufd document number: ds35475 rev. 4 - 2 6 of 6 www.diodes.com july 2012 ? diodes incorporated dmn2400ufd important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated a nd all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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