dmn 2400ufd document number: ds 35475 rev. 6 - 3 1 of 6 www.diodes.com december 2017 ? diodes incorporated dmn 2400ufd new product n - channel enhancement mode mosfet product summary b v dss r ds(on) max i d max t a = + 25c 2 0v 0. 6 ? @ v gs = 4.5v 0.9 a 0.8 ? @ v gs = 2.5 v 0.7a 1.0 ? @ v gs = 1.8 v 0.5a 1.6 ? @ v gs = 1.5 v 0.3a features and benefits ? low on - resistance ? v ery l ow gate threshold voltage , 1.0v m ax ? low input capacitance ? fast switching speed ? esd protected gate ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 s tandards for high reliab ility description and applications this new generation mosfet is designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? power m anagement f unctions ? battery operated systems and solid - state relays ? load s witch mechanical data ? case: x1 - dfn1212 - 3 ? case material: molded plastic ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C nipdau o ver copper l eadframe ; solderable per mil - std - 202, method 208 ? terminal connections: see diagram ? weight: 0.0 05 grams ( a pproximate ) ordering in formation (note 4) part number case packaging dmn 2400u fd - 7 x1 - dfn1212 - 3 3 , 000/tape & reel notes: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "gre en" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes - packaging/ . marking information x1 - dfn1212 - 3 date code key year 201 7 20 18 20 19 20 20 20 21 20 22 2023 2024 2025 code e f g h i j k l m month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view bottom view equivalent circuit pin - out top view esd protected k24 = product type marking code ym = date code marking y = year (ex: y = 201 7 ) m = month (ex: 9 = september) y m k24 not recommended for new design use dm n2450ufd source body diode gate protection diode gate drain e4
dmn 2400ufd document number: ds 35475 rev. 6 - 3 2 of 6 www.diodes.com december 2017 ? diodes incorporated dmn 2400ufd new product maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss 20 v gate - source voltage v gss 12 v continuous drain current (note 6 ) v gs = 4.5 v steady state t a = + 25c t a = + 70c i d 0.9 0. 7 a continuous drain current (note 6 ) v gs = 2.5 v stead y state t a = + 25c t a = + 70c i d 0. 7 0. 5 a pulsed drain curren t ( 10 dm 3.0 a maximum body diode forward current (note 6 ) i s 0.8 a thermal characteristics ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit total power dissipation (note 5 ) p d 0.4 w thermal resistan ce, junction to ambient (note 5 ) s teady s tate r ? 2 8 0 c/w total power dissipation (note 6 ) p d 0.8 w thermal resistance, junction to ambient (note 6 ) s teady s tate r ? 140 c/w thermal resistance, junction to case (note 6 ) r ? 112 c/w operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics ( @t a = + 25c , unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 2 0 - - v v gs = 0v, i d = 250a j = + 25c i dss - - 8 0 100 n a v ds = 4.5 v, v gs = 0v v ds = 20 v, v gs = 0v gate - source leakage i gss - - 1.0 a v gs = 4. 5 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) 0. 4 5 - 1.0 v v ds = v gs , i d = 250 a ds(on) - 0.3 5 0. 6 gs = 4.5v, i d = 2 00ma 0. 45 0. 8 v gs = 2.5v, i d = 2 00ma 0.6 1.0 v gs = 1.8 v, i d = 1 00ma - 0.7 1.6 v gs = 1 .5v, i d = 5 0ma forward transfer admittance |y fs | - 1. 4 - s v ds = 3 v, i d = 2 00ma diode forward voltage v sd 0.7 1.2 v v gs = 0v, i s = 5 0 0ma dynamic characteristics (note 8 ) input capacitance c iss - 3 7 .0 - pf v ds = 16 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 5.7 - pf reverse transfer capacitance c rss - 4.2 - pf gate resistance r g - 68 - ds = 0 v, v gs = 0v total gate charge q g - 0.5 - nc v gs = 4.5 v, v ds = 10 v, i d = 250m a gate - source charge q gs - 0.07 - nc gate - drain charge q gd - 0.1 - nc turn - on delay time t d(on) - 4.06 - ns v dd = 10 v, v gs = 4.5 v, r l = 47 , r g = 10 d = 200ma turn - on rise time t r - 7.28 - ns turn - off delay time t d(off) - 13.74 - ns turn - off fall time t f - 10.54 - ns notes: 5 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with thermal vias to bottom layer 1 - inch square copper plate . 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to production testing. not recommended for new design use dm n2450ufd
dmn 2400ufd document number: ds 35475 rev. 6 - 3 3 of 6 www.diodes.com december 2017 ? diodes incorporated dmn 2400ufd new product 0 0.5 1.0 1.5 0 0.5 1 1.5 2 2.5 3 i , d r a i n c u r r e n t ( a ) d fig . 2 typical transfer characteristics v , gate source voltage (v) gs v = 5v ds t = - 55c a t = 25c a t = 125c a t = 150c a t = 85c a i d , drain current (a) 0 0.2 0.4 0.6 0.8 0 0.4 0.8 1.2 1.6 i , drain current (a) fig. 4 typical drain - source on - resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = - 55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs r ds(on) , drain - source on - resistance ( ? not recommended for new design use dm n2450ufd 0 0.5 1.0 1.5 2.0 0 1 2 3 4 5 fig. 1 typical output characteristics v , drain-source voltage (v) ds i , d r a i n c u r r e n t ( a ) d v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 4.5v gs v = 1.2v gs v = 1.8v gs 0 0.4 0.8 1.2 1.6 2.0 0 0.4 0.8 1.2 1.6 2 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 1.8v gs v = 4.5v gs v = 2.5v gs v = 1.5v gs v = 5.0v gs fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature ( C ) j 0.6 0.8 1.0 1.2 1.4 1.6 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) v = 2.5.v i = 500ma gs d v = 4.5v i = 1.0a gs d 0 0.2 0.4 0.6 0.8 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature ( C ) j v = 4.5v i = 1.0a gs d v = 2.5v i = 500ma gs d
dmn 2400ufd document number: ds 35475 rev. 6 - 3 4 of 6 www.diodes.com december 2017 ? diodes incorporated dmn 2400ufd new product 0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 7 gate threshold variation vs. ambient temperature - 50 - 25 0 25 50 75 100 125 150 t , am bient temperature (c) a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = 250a d i = 1ma d v gs(th) , gate threshold voltage (v) 0 .1 1 10 100 1,000 2 4 6 8 10 12 14 16 18 20 fig. 10 typical drain - source leakage current vs. drain - source voltage v , drain - source voltage (v) ds i , d r a i n - s o u r c e l e a k a g e c u r r e n t ( n a ) d s s t = 25c a t = 85c a t = 125c a t = 150c a t = - 55c a t a =25 c i d ss , drain - source leakage current ( n a ) no t recommended for new design use dm n2450ufd 0 0.4 0.8 1.2 1.6 0 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current 0.2 i , s o u r c e c u r r e n t ( a ) s t = 25 C a 0 10 20 30 40 50 60 0 5 10 15 20 fig. 9 typical capacitance v , drain-source voltage (v) ds c , c a p a c i t a n c e ( p f ) f = 1mhz c iss c oss c rss 0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 0.5 0.6 fig. 11 gate-charge characteristics q , total gate charge (nc) g v , g a t e - s o u r c e v o l t a g e ( v ) g s v = 10v i = 250ma ds d
dmn 2400ufd document number: ds 35475 rev. 6 - 3 5 of 6 www.diodes.com december 2017 ? diodes incorporated dmn 2400ufd new product package outline dimensions please see http://www.diodes.com/ package - outlines.html for the latest version. x1 - dfn1212 - 3 x1 - dfn1212 - 3 dim min max typ a 0.47 0.53 0.50 a1 0 0.05 0.02 a3 - - 0.13 b 0.27 0.37 0.32 b1 0.17 0.27 0.22 d 1.15 1.25 1.20 e 1.15 1.25 1.20 e - - 0.80 l 0.25 0.35 0.30 all dimensions in mm not recommended for new design use dm n2450ufd 261 c /w 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 fig. 12 transient thermal response t , pulse duration time (s) 1 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.5 d = 0.9 t - t = p * r (t) duty cycle, d = t /t j a ja 12 ? r (t) = r(t) * ? ja r r = 261 C /w ? ? ja ja p(pk) t 1 t 2 0.000001 d e e l(3x) a a3 seating plane a1 b b1(2x)
dmn 2400ufd document number: ds 35475 rev. 6 - 3 6 of 6 www.diodes.com december 2017 ? diodes incorporated dmn 2400ufd new product suggested pad layout please see http://www.diodes.com/ package - outlines.html for the latest version. x1 - dfn1212 - 3 dimensions value (in mm) c 0.80 x 0.42 x1 0.32 y 0.50 y1 0.5 0 y2 1.50 important notice diodes incorporated makes no warranty of any ki nd, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the ap plication or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in su ch applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or acce pt any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes inc orporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products describ ed herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in en glish but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are inte nded to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruction s for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that t hey have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their prod ucts and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully in demnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 7 , diodes incorporated www.diodes.com not recommended for new design use dm n2450ufd y2 x x1 (2x) y y1 (2x) c
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