semihow rev.a2,mar 2016 SDM2F150G04G SDM2F150G04G fast soft recovery diode module mar 2016 general description frd module devices are optimized to reduce losses and emi/rfi in high frequency power conditioning electrical systems. these diode modules are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses features ? repetitive reverse voltage : v rrm = 400v ? low forward voltage drop : v f (typ.) = 1.25v ? average forward current : i f (av.) = 150a @ tc = 100 ? fast reverse recovery time : t rr (typ.) = 65 ns @ 150a ? extensive characterization of recovery parameters ? reduced emi and rfi ? non isolation type package ? 175 operating junction temperature ? dual frd construction applications ? high speed & high power converters, welders. ? various switching and telecommunication power supply. equivalent circuit 1 2 h (common heat sink) package : 27mm please see the package out line information absolute maximum ratings @t c =25 (per leg) symbol parameter value unit v rrm repetitive peak reverse voltage 400 v v r reverse dc voltage 320 v i f(av) average forward current t c = 100 , per diode 150 a t c = 100 , per module 300 i fsm no repetitive surge forward current ( 1/2 cycle, sine ) 2750 a i 2 t i 2 t for fusing ( 60hz, sine, t=8.3ms, t j = 25 ) 31.3 * 10 3 a 2 s p d maximum power dissipation 620 w t j junction temperature -40 to + 175 t stg storage temperature -40 to + 150 non isolation type
semihow rev.a2,mar 2016 SDM2F150G04G electrical characteristics t c =25 c unless otherwise specified symbol parameter test conditions min typ max unit v r cathode anode breakdown voltage i r = 100ua 400 -- -- v i r repetitive peak reverse current v r = 400v, t c = 100 -- -- 1 ma v fm maximum forward voltage i f = 150a t c = 25 -- 1.25 1.5 v t c = 100 -- 1.15 -- t rr reverse recovery time v r = 30v, i f = 1a, di / dt = - 200a/ s t c = 25 -- 45 60 ns t rr reverse recovery time v r = 200v, i f = 150a, di / dt = - 200a/ s t c = 25 -- 65 -- ns t c = 100 -- 100 -- symbol parameter test conditions min typ max unit r jc thermal resistance junction -to - case -- -- 0.24 /w - torque mounting torque (m6) 4.0 nm - torque terminal torque (m6) 3.0 nm l x w x h dimensions typical, see outline drawing 92 x 27 x 17 mm - term. to term -- 35 -- mm m mass -- 95 -- g thermal mechanical specifications
semihow rev.a2,mar 2016 SDM2F150G04G characterization curves 0.0 0.5 1.0 1.5 2.0 2.5 1 10 100 1000 t c =25 o c t c =100 o c forward current,i f [a] forward voltage drop,v f [v] figure 1. typical forward voltage drop vs. instantaneous forward current figure 2. typical reverse recovery time vs. - di / dt figure 3. transient thermal impedance( z thjc ) characteristics figure 4. forward current derating curve 0 200 400 600 800 1000 0 25 50 75 100 reverse recovery time, t rr [ns] di/dt[a/us]
semihow rev.a2,mar 2016 SDM2F150G04G package out line information attached (recommended torque): mounting torque(m6) 4.0 nm terminal torque(m6) 3.0 nm dimensions in mm 27mm
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