suzhou goodark electronics co., ltd page 1 of 6 rev. 2.0 ssf 23 00 a 20v n-channel mosfet package marking and ordering information device marking device device package reel size tape width quantity 2300a SSF2300A sot-23 ?180mm 8 mm 3000 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 10 v i d 4.5 a drain current-continuous@ current-pulsed (note 1) i dm 16 a maximum power dissipation p d 1.2 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal characteristics thermal resistance,junction-to-ambient (note 2) r ja 140 /w electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250a 20 v general features v ds = 20v,i d = 4.5a r ds(on) < 50m @ v gs =2.5v r ds(on) < 40m @ v gs =4.5v high power and current handing capability lead free product surface mount package description the SSF2300A uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a battery protection or in other switching application. application s battery protection load switch power management schematic d iagram marking and p in assignment sot - 23 t op v iew d g s
suzhou goodark electronics co., ltd page 2 of 6 rev. 2.0 ssf 23 00 a 20v n-channel mosfet zero gate voltage drain current i dss v ds =20v,v gs =0v 1 a gate-body leakage current i gss v gs =10v,v ds =0v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250a 0.5 0.7 1.5 v v gs =2.5v, i d =4a 35 50 m drain-source on-state resistance r ds(on) v gs =4.5v, i d =4.5a 28 40 m forward transconductance g fs v ds =10v,i d =4.5a 8 s dynamic characteristics (note4) input capacitance c lss 500 pf output capacitance c oss 250 pf reverse transfer capacitance c rss v ds =10v,v gs =0v, f=1.0mhz 90 pf switching characteristics (note 4) turn-on delay time t d(on) 7 ns turn-on rise time t r 55 ns turn-off delay time t d(off) 16 ns turn-off fall time t f v dd =10v, r l = 2.8 ? v gs =4.5v,r gen =6, i d =3.6a, 10 ns total gate charge q g 10 nc gate-source charge q gs 2.3 nc gate-drain charge q gd v ds =10v,i d =4.2a,v gs =4.5v 2.9 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =1.3a 1.2 v notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
suzhou goodark electronics co., ltd page 3 of 6 rev. 2.0 ssf 23 00 a 20v n-channel mosfet typical electrical and thermal characteristics figure 3 power dissipation t j -junction temperature( ) p d power(w) i d - drain current (a) vds drain-source voltage (v) figure 5 output characteristics vgs rgen vin g vdd rl vout s d figure 1: switching test circuit v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2: switching waveforms figure 4 drain current i d - drain current (a t j -junction temperature( ) figure 6 drain-source on-resistance rdson on-resistance(m ) i d - drain current (a)
suzhou goodark electronics co., ltd page 4 of 6 rev. 2.0 ssf 23 00 a 20v n-channel mosfet figure 8 drain - source on - resistance normalized on-resistance t j -junction temperature( ) vgs gate-source voltage (v) i d - drain current (a) figure 7 transfer characteristics vgs gate-source voltage (v) qg gate charge (nc) figure 11 gate charge c capacitance (pf) figure 10 capacitance vs v ds vds drain-source voltage (v) figure 9 r ds(on) vs v gs rdson on-resistance(m ) vgs gate-source voltage (v) figure 12 source - drain diode forward vsd source-drain voltage (v) i s - reverse drain current (a)
suzhou goodark electronics co., ltd page 5 of 6 rev. 2.0 ssf 23 00 a 20v n-channel mosfet figure 13 safe operation area i d - drain current (a) vds drain-source voltage (v) r(t),normalized effective transient thermal impedance figure 14 normalized maximum transient thermal impedance square wave pluse duration(sec)
suzhou goodark electronics co., ltd page 6 of 6 rev. 2.0 ssf 23 00 a 20v n-channel mosfet sot-23 package information dimensions in millimeters (unit: mm) dimensions in millimeters symbol min. max. a 0.900 1.150 a1 0.000 0.100 a2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 d 2.800 3.000 e 1.200 1.400 e1 2.250 2.550 e 0.950typ e1 1.800 2.000 l 0.550ref l1 0.300 0.500 0 8 notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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