j.iu 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . bly9 4 telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 v.h.f . powe r transisto r im-p- n plana r epitaxia l transisto r intende d fo r us e i n class-a , b an d c operate d mobile , industria l an d militar y transmitter s wit h a suppl y voltag e o f 2 8 v , th e transisto r i s resistanc e stabilized . ever y tran - sisto r i s teste d unde r sever e loa d mismatc h conditions , t t ha s a plasti c encapsulate d striplin e package . al l lead s ar e isolate d fro m th e stud . quic k referenc e dat a r.f . performanc e u p t o t m b = 2 5 c i n a n unneutralize d common-emitte r class- b circui t mod e o f operatio n c.w . vce v 2 8 f mh z 17 5 p s w <1 0 p l w 5 0 ' c a <2,7 6 g b d > 7 t ? % >6 5 z j n 0. 8 + j 1.4 5 ? l m s 125-j6 6 mechanica l dat a dimension s i n m m .11 2 x 4 5 1/4-2 b unf-2 a 2 ) .63 0 nd m a b c d e f g h minimu m inch??/n n .220/5,5 9 545/13l8 4 .49s/1e5 7 j003/a0 8 .185/4,7 0 .497/ias a ! maximu m inches/fi n .830/5,8 4 1.050/26^ 7 .555/14,1 0 .505/12,8 3 .007/0,1 8 30/210 8 ,198/5^j 3 530/13,4 6 qualit y semi-conductor s downloaded from: http:///
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