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  4n65 1 / 10 may,2015-rev.00 www.dyelec.com 1. gate 2. drain 3. source pin definition: product summary v ds (v) r ds(on) ( ?) i d (a) 650 2.4 @ v gs =10v 4 650v n-channel power mosfet absolute maximum ratings (t c =25c, unless otherwise specified) r ds(on) <2.4? @ v gs =10v fast switching capability lead free in compliance with eu rohs directive. green molding compound ordering information case: to-251,to-252,to-220,ito-220 to-262 ,to-263 package parameter symbol ratings unit drain-source voltage v dss 650 v gate-source voltage v gss 30 v continuous drain current i d 4.0 a pulsed drain current (note 2) i dm 16 a avalanche energy single pulsed (note 3) e as 260 mj power dissipation to-220/to-262/to-263 p d 106 w ito-220 35 w to-251/to-252 50 w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limit ed by maximum junction temperature 3. l = 30mh, i as = 3.6 a, v dd = 50v, r g = 25 ? , starting t j = 25c part no. package packing dmp4n65-tu to-251 75pcs / tube dmd4n65-tr to-252 2.5kpcs / 13 reel dmt4n65-tu to-220 50pcs / tube dmf4n65-tu ito-220 50pcs / tube dmd4n65-tu to-252 75pcs / tube block diagram d g s DMK4N65-TU to-262 50pcs / tube dmg4n65-tu to-263 50pcs / tube dmg4n65-tr to-263 800pcs / 13" reel
2 / 10 4n65 650v n-channel power mosfet electrical characteristics (t c =25c, unless otherwise specified) parameter symbol t est conditions typmin max unit off characteristics drain-source breakdown voltage bv dss gs v = 0v, i d = 250 a 650 v drain-source leakage current i dss v ds = 650v, v gs = 0v 1 a gate-source leakage current forward i gss v gs = 30v, v ds = 0v 100 na reversee vgs = -30v, v ds = 0v -100 na on characteristics gate threshold voltage v gs ( th ) ds v = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) vgs= 10 v, i d = 2a 2.0 2.4 ? dynamic characteristics input capacitance c iss v ds = 25v, v gs = 0v, f = 1mhz 670 pf output capacitance c oss pf 70 reverse transfer capacitance c rss pf 23 switching characteristics turn-on delay time t d( on ) v dd = 325v, i d =4.0a, r g = 25? (note 1, 2) 45 ns turn-on rise time t r ns 100 turn-off delay time t d( off ) ns 200 turn-off fall time t f ns total gate charge q g v ds = 520v,i d = 4.0a, v gs = 10v (note 1, 2) 100 nc gate-source charge q gs nc 17 gate-drain charge q gd nc 20 source- drain diode ratings and characteristics drain-source diode forward voltage v sd vgs= 0v, i s = 4a 1.4 v maximum continuous drain-source diode forward current i s 4 a maximum pulsed drain-source diode forward current i sm 16 a reverse recovery time t rr v gs = 0 v, i s = 4a, di f /dt = 100 a/ s (note 1) 260 ns reverse recovery charge q rr c 2.5 notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2.. essenti ly independent of operating temperature may.2015-rev.00 www.dyelec.com 130 thermal data parameter symbol rating unit junction to ambient to-220/ito-220 to-262/to-263 ja 62.5 c/w to-251/ to-252 110 junction to case jc 2.35 c/w ito-220 5 .5 to-251/ to-252 2. 9 to-220/i to-220 to-262/to-263
3 / 10 test circ uits and waveforms 4n65 650v n-channel power mosfet same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms may,2015-rev.00 www.dyelec.com
4 / 10 test circuits and waveforms(cont.) 4n65 650v n-channel power mosfet switching test circuit switching waveforms gate charge test circuit gate charge waveform v dd bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit t p time unclamped inductive switching waveforms may,2015-rev.00 www.dyelec.com
5 / 10 typical characteristics 4n65 650v n-channel power mosfet may,2015-rev.00 www.dyelec.com -100 drain-source breakdown voltage, bv dss (normalized) (v) junction temperature, t j ( ) -50 50 200 100 150 1.2 0 1.1 1.0 0.9 0.8 note: 1.. gs =0v 2.. d =250a breakdown voltage variation vs. temperature -100 drain-source on-resistance, r ds(on) (normalized) ( ? ) junction temperature, t j ( ) -50 50 200 100 150 3.0 0 2.0 1.0 0.5 0.0 1.5 2.5 on-resistance junction temperature note: 1.. gs =10v 2.. d =4a 10 1 10 0.1 1 drain-to-source voltage, v ds (v) on-state characteristics 0.1 2 gate-source voltage, v gs (v) transfer characteristics 46 810 150 notes: 1. v ds =50v 2. 250s pulse test 10 1 0.1 25 5.0v notes: 1.. 50s pulse test 2. t c =25 v gs top:op: 9v 8v 7v 6v 5.5v 5 v bottorm:5.0v
4n65 650v n-channel power mosfet typical characteristics(cont.) 6 / 10 may,2015-rev.00 www.dyelec.com 1200 0 0.1 drain-sourcevoltage, v ds (v) 1000 200 11 0 c iss 800 600 notes: 1. v gs =0v 2. ff 1mhz c iss= c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance characteristics (non-repetitive) 0 total gate charge, q g (nc) 5 15 25 note: i d =4a 8 10 12 10 6 4 2 0 v ds =120v v ds =300v v ds =480v 20 gate charge characteristics c oss c rss 400 thermal response, jc (t) p d (w)
7 / 10 t o - 220 mechanical drawing it o-220 m echanical drawing 4n65 650v n-channel power mosfet may,2015-rev.00 www.dyelec.com
4n65 650v n-channel power mosfet 8 / 10 may,2015-rev.00 www.dyelec.com to-262 mechanical drawing to-263 mechanical drawing
9 / 10 to-251 mechanical drawing to-252 mechanical drawing 4n65 650v n-channel power mosfet may,2015-rev.00 www.dyelec.com
10 / 10 notice specifications of the products displayed herein are subject to change without notice. diyi or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in diyi s terms and conditions of sale for such products, diyi assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of diyi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify diyi for any damages resulting from such improper use or sale. 4n65 650v n-channel power mosfet may,2015-rev.00 www.dyelec.com


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