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i n c h a n g e s e m i c o n d u c t o r i s c w e b s i t e w w w . i s c s e m i . c n i s c & i s c s e m i i s r e g i s t e r e d t r a d e m a r k 1 i s c n - c h a n n e l m o s f e t t r a n s i s t o r i p d 8 0 r 2 k 8 c e , i i p d 8 0 r 2 k 8 c e f e a t u r e s s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e : r d s ( o n ) 2 . 8 ? e n h a n c e m e n t m o d e : 1 0 0 % a v a l a n c h e t e s t e d m i n i m u m l o t - t o - l o t v a r i a t i o n s f o r r o b u s t d e v i c e p e r f o r m a n c e a n d r e l i a b l e o p e r a t i o n d e s c r i t i o n h i g h p e a k c u r r e n t c a p a b i l i t y a b s o l u t e m a x i m u m r a t i n g s ( t a = 2 5 ) s y m b o l p a r a m e t e r v a l u e u n i t v d s s d r a i n - s o u r c e v o l t a g e 8 0 0 v v g s g a t e - s o u r c e v o l t a g e 2 0 v i d d r a i n c u r r e n t - c o n t i n u o u s 1 . 9 a i d m d r a i n c u r r e n t - s i n g l e p u l s e d 6 a p d t o t a l d i s s i p a t i o n @ t c = 2 5 4 2 w t j m a x . o p e r a t i n g j u n c t i o n t e m p e r a t u r e 1 5 0 t s t g s t o r a g e t e m p e r a t u r e - 5 5 ~ 1 5 0 t h e r m a l c h a r a c t e r i s t i c s s y m b o l p a r a m e t e r m a x u n i t r t h ( j - c ) c h a n n e l - t o - c a s e t h e r m a l r e s i s t a n c e 3 / w r t h ( j - a ) c h a n n e l - t o - a m b i e n t t h e r m a l r e s i s t a n c e 6 2 / w
i n c h a n g e s e m i c o n d u c t o r i s c w e b s i t e w w w . i s c s e m i . c n i s c & i s c s e m i i s r e g i s t e r e d t r a d e m a r k 2 i s c n - c h a n n e l m o s f e t t r a n s i s t o r i p d 8 0 r 2 k 8 c e , i i p d 8 0 r 2 k 8 c e e l e c t r i c a l c h a r a c t e r i s t i c s t c = 2 5 u n l e s s o t h e r w i s e s p e c i f i e d s y m b o l p a r a m e t e r c o n d i t i o n s m i n t y p m a x u n i t b v d s s d r a i n - s o u r c e b r e a k d o w n v o l t a g e v g s = 0 v ; i d = 0 . 2 5 m a 8 0 0 v v g s ( t h ) g a t e t h r e s h o l d v o l t a g e v d s = v g s ; i d = 0 . 1 2 m a 2 . 1 3 . 9 v r d s ( o n ) d r a i n - s o u r c e o n - r e s i s t a n c e v g s = 1 0 v ; i d = 1 . 1 a 2 . 8 i g s s g a t e - s o u r c e l e a k a g e c u r r e n t v g s = 2 0 v ; v d s = 0 v 0 . 1 a i d s s d r a i n - s o u r c e l e a k a g e c u r r e n t v d s = 8 0 0 v ; v g s = 0 v 5 a v s d d i o d e f o r w a r d v o l t a g e i f = 1 . 9 a , v g s = 0 v 1 . 2 v

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Price & Availability of IPD80R2K8CE

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD80R2K8CEATMA1 12AC9716	Infineon Technologies AG	Mosfet, N-Ch, 800V, 1.9A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:800V; On Resistance Rds(On):2.4Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes \|Infineon IPD80R2K8CEATMA1	1000: USD0.549 500: USD0.658 250: USD0.711 100: USD0.763 50: USD0.824 25: USD0.885 10: USD0.947 1: USD1.15	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD80R2K8CEATMA1 IPD80R2K8CEATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 800V 1.9A TO252-3	25000: USD0.39075 12500: USD0.3915 5000: USD0.41044 2500: USD0.43096	4860
IPD80R2K8CEBTMA1 IPD80R2K8CEBTMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 800V 1.9A TO252-3		0
IPD80R2K8CEBTMA1 IPD80R2K8CEBTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 800V 1.9A TO252-3		0
IPD80R2K8CEBTMA1 IPD80R2K8CEBTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 800V 1.9A TO252-3		0
IPD80R2K8CEATMA1 IPD80R2K8CEATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 800V 1.9A TO252-3	1000: USD0.4578 500: USD0.562 100: USD0.663 10: USD0.852 1: USD1.04	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD80R2K8CEATMA1 IPD80R2K8CEATMA1	Infineon Technologies AG	Trans MOSFET N-CH 800(Min)V 1.9A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R2K8CEATMA1)		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD80R2K8CEATMA1 726-IPD80R2K8CEATMA1	Infineon Technologies AG	MOSFETs N-Ch 800V 1.9A DPAK-2	1: USD1.03 10: USD0.839 100: USD0.662 500: USD0.561 1000: USD0.457 2500: USD0.423 5000: USD0.405 10000: USD0.391	9038

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD80R2K8CEATMA1 78406054	Infineon Technologies AG	Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R	25000: USD0.3776 12500: USD0.3789 10000: USD0.3794 5000: USD0.3914 2500: USD0.4068	2500

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD80R2K8CEATMA1	Infineon Technologies AG	IPD80R2K8 - N-Channel Power MOSFET	1000: USD0.3875 500: USD0.4103 100: USD0.4285 25: USD0.4468 1: USD0.4559	7450

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD80R2K8CE	Infineon Technologies AG	800V CoolMOS CE Power MOSFET Power Field-Effect Transistor, 1.9A I(D), 800V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		4930

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD80R2K8CEATMA1	Infineon Technologies AG		2500: USD0.6129 5000: USD0.5672	5000

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD80R2K8CE	Infineon Technologies AG			112
IPD80R2K8CEBTMA1	MFG UPON REQUEST			728
IPD80R2K8CEATMA1	Infineon Technologies AG			2

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPD80R2K8CE	Infineon Technologies AG	IPD80R2K8CE		0

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