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2011. 5. 23 1/4 semiconductor technical data KTX711T epitaxial planar pnp transistor silicon epitaxial planar type diode revision no : 2 tv control board application features h one pnp transistor (q1) h two switching diode (d1, d2) h low saturation voltage : v ce(sat) = -0.25v(max)@ i c = -100ma, i b = -10ma dim millimeters a b d e ts6 2.9 0.2 1.6+0.2/-0.1 0.70 0.05 0.4 0.1 2.8+0.2/-0.3 1.9 0.2 0.95 0.16 0.05 0.00-0.10 0.25+0.25/-0.15 c f g h i j k 0.60 l 0.55 a f g g d k k b e c l h j j i 2 3 5 16 4 + _ + _ + _ + _ + _ 1. d1 cathode / d2 anode 2. q1 base 3. q1 emitter 4. q1 collector 5. d1 anode 6. d2 cathode characteristic symbol rating unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -80 v emitter-base voltage v ebo -5 v collector current i c -500 ma base current i b -100 ma * : package mounted on a ceramic board (600mm 2 ? 0.8mm) 6 123 5 4 6 123 5 t 7 4 lot no. q1 d1 d2 type name marking maximum rating (ta=25 ? '
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2011. 5. 23 2/4 KTX711T revision no : 2 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =80v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -80 - - v dc current gain h fe (1) v ce =-1v, i c =-10ma 100 - - h fe (2) v ce =-1v, i c =-100ma 100 - 250 collector-emiotter saturation voltage v ce(sat) i c =-100ma, i b =-10ma - - -0.25 v base-emitter voltage v be v ce =-1v, i c =-100ma - - -1.2 v transition frequency f t v ce =-2v, i c =-10ma 100 - - mh z transistor electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit forward voltage v f(1) i f =1ma - 0.60 - v v f(2) i f =10ma - 0.72 - v f(3) i f =100ma - 0.90 1.20 reverse current i r v r =80v - - 0.1 a total capacitance c t v r =0v, f=1mhz - 0.9 3.0 pf reverse recovery time t rr i f =10ma - 1.6 4.0 ns
2011. 5. 23 3/4 KTX711T revision no : 2 i - v cce ce collector-emitter voltage v (v) 0-2 -100 c 0 collector current i (ma) 50 dc current gain h fe 500 -1 collector current i (ma) c c fe h - i collector-emitter saturation ce(sat) -0.01 -1 collector current i (ma) c c ce(sat) v - i i - v cbe be base-emitter voltage v (v) 0 -0.2 -0.4 -100 c 0 collector current i (ma) -4 -6 -8 -10 -12 -14 -200 -300 -400 -500 common emitter ta=25 c i =0.5ma b -1ma -2ma -3ma -5ma 0ma -3 -10 -30 -100 -300 30 100 10 300 common emitter v =-2v ce ta=100 c ta=25 c ta=-25 c -3 -10 -30 -100 -500 -0.03 -0.05 -0.1 -0.3 -0.5 voltage v (v) common emitter i /i =10 c b t a=100 c ta=- 25 c ta=25 c -0.6 -0.8 -1.0 -1.2 -200 -300 -400 -500 common emitter v =-2v ce ta=100 c ta=25 c ta=-25 c reverse current i ( a) r 10 0 reverse voltage v (v) r i - v i - v f forward voltage v (v) 0 f 10 forward current i (ma) ff 0.2 0.4 0.6 0.8 1.0 1.2 -2 -1 10 2 10 3 10 10 1 ta=100 c ta=2 5 c ta=-25 c rr 20 40 60 80 -3 -2 10 -1 10 1 10 ta=100 c ta=75 c ta=50 c ta=25 c q1 (npn transistor) d1, d2 (switching diode)
2011. 5. 23 4/4 KTX711T revision no : 2 reverse voltage v r (v) v r - t a temperature t a ( ) derated ambient 180 150 120 90 60 30 0 0 20 40 60 80 ambient temperature ta ( ) p c - t a power dissipation p c (mw) 1200 900 600 300 0 0 30 60 90 150 120 1 0.1 reverse voltage v (r) r r t c - v total capacitance c (pf) 0 t 0.4 0.8 1.2 1.6 2.0 3 10 30 100 f=1mhz ta=25 c 0.3

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