BGA427 aug-02-2001 1 in sieget 25-technologie si-mmic-amplifie r vps05605 4 2 1 3 cascadable 50 -gain block unconditionally stable gain | s 21 | 2 = 18.5 db at 1.8 ghz (appl.1) gain | s 21 | 2 = 22 db at 1.8 ghz (appl.2) i p 3out = +7 dbm at 1.8 ghz ( v d =3v, i d =9.4ma) noise figure nf = 2.2 db at 1.8 ghz typical device voltage v d = 2 v to 5 v reverse isolation 35 db (appl.2) eha07378 v 2 1 in out + 4 3 gnd circuit diagram esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package BGA427 bms 1, in 2, gnd 3, +v 4, out sot343 maximum ratings parameter symbol value unit device current i d 25 ma device voltage v d ,+v 6 v total power dissipation t s = 120 c p tot 150 mw rf input power p rfin -10 dbm junction temperature t j 150 c ambient temperature range t a -65 ... 150 storage temperature range t stg -65 ... 150 thermal resistance junction - soldering point 1) r thjs 295 k/w 1 for calculation of r thja please refer to application note thermal resistance
BGA427 aug-02-2001 2 electrical characteristics at t a = 25 c, unless otherwise specified. parameter symbol unit values typ. max. min. ac characteristics v d = 3 v, z o = 50 , testfixture appl.1 | s 21 | 2 - - - insertion power gain f = 0.1 ghz f = 1 ghz f = 1.8 ghz 27 22 18.5 - - - db reverse isolation f = 1.8 ghz s12 - 22 - noise figure f = 0.1 ghz f = 1 ghz f = 1.8 ghz - - - - - - 1.9 2 2.2 nf intercept point at the output f = 1.8 ghz ip 3out - + 7 - dbm return loss input f = 1.8 ghz rl in - >12 - db return loss output f = 1.8 ghz rl out - >9 - typical configuration appl.2 appl.1 eha07379 100 pf 100 pf 1 nf rf out rf in gnd + v bga 427 eha07380 2.2 pf 100 pf rf in 100 pf gnd rf out 100 nh 10 nf 100 pf + v bga 427 note: 1) large-value capacitors should be connected from pin 3 to ground right at the device to provide a low impedance path (appl.1). 2) the use of plated through holes right at pin 2 is essential for pc-board-applications. thin boards are recommended to minimize the parasitic inductance to ground.
BGA427 aug-02-2001 3 s-parameters at t a = 25 c, (testfixture, appl.1) f s 11 s 21 s 12 s 22 ghz mag ang mag ang mag ang mag ang v d = 3v, z o = 50 0.0022 0.0046 0.0104 0.0169 0.0194 0.0225 0.0385 0.0479 0.0517 0.0549 0.0709 0.0892 50.7 71.8 83.8 94.8 97.3 98.3 99.7 99.3 98.9 98.8 97.1 96.9 0.1 0.2 0.5 0.8 0.9 1 1.5 1.8 1.9 2 2.5 3 -38.3 -16 -20.8 -56.9 -69.1 -80.6 -133.5 -156.1 -162.8 -167.7 172.8 153.3 164.9 158.9 135.2 115.4 109.4 104 84.9 77 74.7 72.3 63 55 24.821 24.606 22.236 18.258 17.152 15.786 10.923 9.029 8.486 8.015 6.259 5.103 0.1382 0.1179 0.1697 0.1824 0.1782 0.176 0.1827 0.1969 0.2021 0.2116 0.2437 0.258 0.6435 0.6278 0.54 0.4453 0.4326 0.4129 0.3852 0.3917 0.3946 0.3991 0.4202 0.4477 174.8 166.9 147.3 140.2 139.4 138.1 139.6 139.3 138.8 138.3 134.6 131 spice-model bga 427 eha07381 3 r r 1 p1 c p2 c 1 c r 2 p3 cc p4 p5 cr 4 11 14 13 t2 12 c?-e?- including parasitics diode out bga 427-chip in gnd + v t1 t1 t501 t2 t501 r 1 14.5k r 2 280 r 3 2.4k r 4 170 c 1 2.3pf c p1 0.2pf 0.2pf c p2 c p3 0.6pf c p4 0.1pf c p5 0.1pf c'-e'-diode t1
BGA427 aug-02-2001 4 transistor chip data t1 (berkley-spice 2g.6 syntax) : is = 0.21024 fa v 39.251 vaf = ne = 1.7763 - v var = 34.368 nc = 1.3152 - rbm = 1.3491 cje = 3.7265 ff ps 4.5899 tf = itf = 1.3364 ma v 0.99532 vjc = tr = 1.4935 ns - mjs = 0 xti = 3 - nf = 1.0405 - ise = fa 15.761 0.96647 - nr = isc = 0.037223 fa 0.21215 a irb = rc = 0.12691 0.37747 - mje = vtf = v 0.19762 96.941 ff cjc = xcjc = 0.08161 - 0.75 v vjs = eg = 1.11 ev 300 k tnom bf = 83.23 - a 0.16493 ikf = br = 10.526 - a ikr = 0.25052 rb = 15 re = 1.9289 vje = 0.70367 v - xtf = 0.3641 ptf = 0 deg - 0.48652 mjc = cjs = 0ff - xtb = 0 fc = 0.99469 - c'-e'-diode data (berkley-spice 2g.6 syntax) : rs = 20 is = 2 fa - 1.02 n = all parameters are ready to use, no scaling is necessary package equivalent circuit: l bi = 0.36 nh l bo = 0.4 nh l ei = 0.3 nh l eo = 0.15 nh l ci = 0.36 nh l co = 0.4 nh c be = 95 ff c cb = 6ff c ce = 132 ff c 1 =28 ff c 2 =88 ff c 3 = 8 ff l 1 = 0.6 nh l 2 = 0.4 nh eha07382 l bi 1 c be c bo l ei l l eo cb c ci l c 3 co l ce c chip 11 13 12 c?-e?- in diode c 2 2 l out l 1 14 + v gnd bga 427 valid up to 3ghz extracted on behalf of infineon technologies ag by: institut fr mobil-und satellitentechnik (imst) for examples and ready to use parameters please contact your local infineon technologies distributor or sales office to obtain a infineon technologies cd-rom or see internet: http://www.infineon.com/silicondiscretes
BGA427 aug-02-2001 5 insertion power gain | s 21 | 2 = f ( f ) v d , i d = parameter 10 -1 10 0 10 1 ghz f 0 5 10 15 20 25 db 35 | s 21 | 2 v d =5v, i d =17.5ma v d =4v, i d =13.3ma v d =3v, i d =9.5ma v d =2v, i d =5.2ma noise figure nf = f ( f ) v d , i d = parameter 10 -1 10 0 10 1 ghz f 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 db 5.0 nf v d =5v, i d =17.5ma v d =3v, i d =9.5ma intercept point at the output ip 3out = f ( f ) v d , i d = parameter 10 -1 10 0 10 1 ghz f 0 5 10 15 dbm 25 ip 3out v d =5v, i d =17.5ma v d =4v, i d =13.3ma v d =3v, i d =9.5ma v d =2v, i d =5.2ma
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