creat by art - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test, with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 20 30 40 50 60 90 100 150 v v rms 14 21 28 35 42 63 70 105 v v dc 20 30 40 50 60 90 100 150 v i f(av) a dv/dt v/ s r jc o c/w t j o c t stg o c document number: ds_d1308049 version: i13 sra820 thru sra8150 taiwan semiconductor schottk y barrier rectifier features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec to-220ac mechanical data case: to-220ac polarity: as marked mounting torque: 5 in-lbs maximum weight: 1.85 g (approximately) maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter symbol sra 820 sra 830 sra 840 sra 850 sra 860 maximum average forward rectified current sra 890 sra 8100 unit maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm a 0.95 4 10000 - 5 v typical thermal resistance operating junction temperature range - 55 to +125 maximum instantaneous forward voltage (note 1) @ 8a v f - note 1: tp = 2.0 s, 1.0khz storage temperature range 0.5 0.1 15 10 ma - 55 to +150 - 55 to +150 note 2: pulse test with pw=300 s, 1% duty cycle sra 8150 8 150 0.55 0.70 0.85 voltage rate of change (rated v r ) maximum reverse current @ rated vr t j =25 t j =100 t j =125 i r
part no. part no. SRA860 SRA860 SRA860 (ta=25 unless otherwise noted) document number: ds_d1308049 version: i13 sra820 thru sra8150 taiwan semiconductor ordering information aec-q101 qualified packing code green compound code package packing note 1: "xx" defines voltage from 20v (sra820) to 150v (sra8150) sra8xx (note 1) prefix "h" c0 suffix "g" example to-220ac 50 / tube aec-q101 qualified preferred p/n aec-q101 qualified packing code green compound code description SRA860 c0 c0 ratings and characteristics curves SRA860 c0g c0 g green compound SRA860hc0 h c0 0 2 4 6 8 10 12 50 60 70 80 90 100 110 120 130 140 150 average forward a current (a) case temperature ( o c) fig.1 forward current derating curve sra850-sra8150 sra820-sra840 resistive of inductive load with heatsink 0 50 100 150 200 250 300 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2 maximum non-repetitive forward surge current 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 0 20 40 60 80 100 120 140 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 4 typical reverse characteristics tj=25 tj=75 tj=100 0.1 1 10 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 instantaneous forward current(a) forward voltage (v) fig. 3 typical forward characteristics sra820-sra840 sra850-SRA860 sra890-sra8100 pluse width=300 s 1% duty cycle sra8150
min max min max a - 10.50 - 0.413 b 2.62 3.44 0.103 0.135 c 2.80 4.20 0.110 0.165 d 0.68 0.94 0.027 0.037 e 3.54 4.00 0.139 0.157 f 14.60 16.00 0.575 0.630 g 0.00 1.60 0.000 0.063 h 13.19 14.79 0.519 0.582 i 4.95 5.20 0.195 0.205 j 4.42 4.76 0.174 0.187 k 1.14 1.40 0.045 0.055 l 5.84 6.86 0.230 0.270 m 2.20 2.80 0.087 0.110 n 0.35 0.64 0.014 0.025 p/n = marking code g = green compound yww = date code f = factory code document number: ds_d1308049 version: i13 marking diagram sra820 thru sra8150 taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 100 1000 10000 0.1 1 10 100 capacitance (pf) a reverse voltage (v) fig. 5 typical junction capacitance f=1.0mhz vsig=50mvp-p sra820-SRA860 sra890-sra8100 sra8150 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t-pulse duration(s) fig. 6 typical transient thermal impedance
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