|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
1. product profile 1.1 general description 160 w ldmos power transistor with improved video bandwidth for base station applications at frequencies from 2000 mhz to 2200 mhz. [1] test signal: 3gpp test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf; carrier spacing 5 mhz. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low thermal resistance providing excellent thermal stability ? decoupling leads to enable improved video bandwidth (100 mhz typical) ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? integrated current sense ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifier for w-cdma base statio ns and multi carrier applications in the 2000 mhz to 2200 mhz frequency range blf8g22ls-160bv power ldmos transistor rev. 2 ? 1 may 2015 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 2110 to 2170 1300 32 55 18.0 32 ? 31 [1]
blf8g22ls-160bv all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all ri ghts reserved. product data sheet rev. 2 ? 1 may 2015 2 of 13 nxp semiconductors blf8g22ls-160bv power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect mttf. 5. recommended operating conditions 6. thermal characteristics table 2. pinning pin description simplified outline graphic symbol 1drain 2gate 3source [1] 4,5 video decoupling 6 sense gate 7 sense drain d d d table 3. ordering information type number package name description version blf8g22ls-160bv - earless flanged ldmost ceramic package; 6 leads sot1120b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v v gs(sense) sense gate-source voltage ? 0.5 +9 v t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c t case case temperature [1] - 150 ?c table 5. operating conditions symbol parameter conditions min typ max unit t case case temperature ? 40 - +125 ?c table 6. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 55 w 0.27 k/w blf8g22ls-160bv all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all ri ghts reserved. product data sheet rev. 2 ? 1 may 2015 3 of 13 nxp semiconductors blf8g22ls-160bv power ldmos transistor 7. characteristics 8. test information 8.1 ruggedness in class-ab operation the blf8g22ls-160bv is capable to withst and a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =32v; i dq = 1300 ma; p l = 160 w; f = 2110 mhz. table 7. characteristics t j = 25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =2.16ma 65 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 216 ma 1.5 1.9 2.3 v i dss drain leakage current v gs =0v; v ds =28v - - 4.5 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -40-a i gss gate leakage current v gs =11v; v ds = 0 v - - 450 na g fs forward transconductance v ds =10v; i d = 10.8 a - 16 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =7.56a -0.06- ? i dq quiescent drain current main transitor: v ds =32 v sense transitor: i ds = 23.4 ma; v ds =30.4v 1175 1300 1425 ma table 8. application information test signal: 2-carrier w-cdma; par 8.4 db at 0.01 % probability on ccdf; 3gpp test model 1; 64 dpch; f 1 = 2112.5 mhz; f 2 = 2117.5 mhz; f 3 = 2162.5 mhz; f 4 = 2167.5 mhz; rf performance at v ds = 32 v; i dq = 1300 ma; t case = 25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) = 55 w 16.8 18.0 19.7 db rl in input return loss p l(av) = 55 w - ? 13 ? 7db ? d drain efficiency p l(av) = 55 w 29 32 - % acpr 5m adjacent channel power ratio (5 mhz) p l(av) = 55 w - ? 31 ? 28 dbc table 9. application information mode of operation: 1-carrier w-cdma; par 7. 2 db at 0.01 % probability on ccdf; 3gpp test model 1; 64 dpch; f = 2167.5 mhz; rf performance at v ds = 32 v; i dq =1300ma; t case = 25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit par o output peak-to-average ratio p l(av) =115w; at 0.01 % probability on ccdf 3.9 4.3 - db p l(m) peak output power 290 310 - w blf8g22ls-160bv all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all ri ghts reserved. product data sheet rev. 2 ? 1 may 2015 4 of 13 nxp semiconductors blf8g22ls-160bv power ldmos transistor 8.2 impedance information [1] z s and z l defined in figure 1 . 8.3 vbw in class-ab operation the blf8g22ls-160bv shows 100 mhz (typical) video bandwidth in class-ab test circuit in 2.1 ghz band at 32 v and 1.3 a. table 10. typical impedance i dq = 1300 ma; main transistor v ds = 32 v. f z s [1] z l [1] (mhz) (? ) (? ) 2110 2.2 ? j4.6 1.4 ? j2.8 2140 2.1 ? j4.5 1.4 ? j2.6 2170 2.1 ? j4.3 1.3 ? j2.4 fig 1. definition of transistor impedance d d i g u d l q = / = 6 j d w h blf8g22ls-160bv all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all ri ghts reserved. product data sheet rev. 2 ? 1 may 2015 5 of 13 nxp semiconductors blf8g22ls-160bv power ldmos transistor 8.4 cw pulse v ds =32v; i dq = 1300 ma. (1) g p at f = 2110 mhz (2) g p at f = 2140 mhz (3) g p at f = 2170 mhz (4) ? d at f = 2110 mhz (5) ? d at f = 2140 mhz (6) ? d at f = 2170 mhz v ds =32v; i dq = 1300 ma. (1) f = 2110 mhz (2) f = 2140 mhz (3) f = 2170 mhz fig 2. power gain and drain efficiency as function of load power; typical values fig 3. input return loss as a function of load power; typical values d d d 3 / g % p * s s s g % ' d d d 3 / g % p 5 / l q g % blf8g22ls-160bv all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all ri ghts reserved. product data sheet rev. 2 ? 1 may 2015 6 of 13 nxp semiconductors blf8g22ls-160bv power ldmos transistor 8.5 2-carrier w-cdma v ds =32v; i dq = 1300 ma. (1) g p at f = 2115 mhz (2) g p at f = 2140 mhz (3) g p at f = 2165 mhz (4) ? d at f = 2115 mhz (5) ? d at f = 2140 mhz (6) ? d at f = 2165 mhz v ds =32v; v gs =32v; f=5mhz; ? =46%. (1) acpr 5m at f = 2115 mhz (2) acpr 5m at f = 2140 mhz (3) acpr 5m at f = 2165 mhz (4) acpr 10m at f = 2115 mhz (5) acpr 10m at f = 2140 mhz (6) acpr 10m at f = 2165 mhz fig 4. power gain and drain efficiency as function of load power; typical values fig 5. adjacent channel power ratio (5mhz) and adjacent channel power ratio (10mhz) as function of load power; typical values v ds =32v; i dq = 1300 ma. (1) f = 2115 mhz (2) f = 2140 mhz (3) f = 2165 mhz fig 6. peak to average power ratio as a function of load power; typical values d d d 3 / g % p * s s s g % ' d d d 3 / g % p $ & |