ssf2n60g 600v n-channel mosfet www.goodark.com page 1 of 7 rev.1.0 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 2 i d @ tc = 100c continuous drain current, v gs @ 10v 1.3 i dm pulsed drain current 8 a power dissipation 35 w p d @tc = 25c linear derating factor 0.28 w/c v ds drain-source voltage 600 v v gs gate-to-source voltage 30 v e as single pulse avalanche energy @ l=30mh 135 mj i as avalanche current @ l=30mh 3.0 a t j t stg operating junction and storage temperature range -55 to +150 c v dss 600v r ds (on) 3.5 (typ.) i d 2a to-251 marking and pin assignment schematic diagram ? advanced mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 150 operating temperature ? lead free product it utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
ssf2n60g 600v n-channel mosfet www.goodark.com page 2 of 7 rev.1.0 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 3.57 /w r ja junction-to-ambient (t 10s) 110 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 600 v v gs = 0v, id = 250a 3.5 4.2 v gs =10v,i d = 1.0a r ds(on) static drain-to-source on-resistance 8.2 t j = 125 2 4 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 1.9 v t j = 125 1 v ds = 600v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125 100 v gs =30v i gss gate-to-source forward leakage -100 na v gs = -30v q g total gate charge 5.7 q gs gate-to-source charge 1.7 q gd gate-to-drain("miller") charge 2.0 nc i d = 2.0a, v ds =480v, v gs = 10v t d(on) turn-on delay time 9.6 t r rise time 6.9 t d(off) turn-off delay time 15.5 t f fall time 10.9 ns v gs =10v, vds=300v, r gen =25, id=2.0a c iss input capacitance 258 c oss output capacitance 39 c rss reverse transfer capacitance 2.5 pf v gs = 0v v ds = 25v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 2 a i sm pulsed source current (body diode) 8 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.4 v i s =2.0a, v gs =0v t rr reverse recovery time 357 ns q rr reverse recovery charge 1030 nc t j = 25c, i f =2a, di/dt = 100a/s
ssf2n60g 600v n-channel mosfet www.goodark.com page 3 of 7 rev.1.0 test circuits and waveforms switch waveforms: notes : the maximum current rating is limited by bond-wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c
ssf2n60g 600v n-channel mosfet www.goodark.com page 4 of 7 rev.1.0 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. case temperature figure 4: normalized on-resistance vs. case temperature
ssf2n60g 600v n-channel mosfet www.goodark.com page 5 of 7 rev.1.0 figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics figure 6.typical capacitance vs. drain-to-source voltage
ssf2n60g 600v n-channel mosfet www.goodark.com page 6 of 7 rev.1.0 mechanical data min nom max min nom max a 2.200 - 2.400 0.087 - 0.094 a1 0.950 - 1.150 0.037 - 0.045 b 0.950 - 1.250 0.037 - 0.049 b 0.500 - 0.700 0.020 - 0.028 c 0.450 - 0.550 0.018 - 0.022 c1 0.450 - 0.550 0.018 - 0.022 d 6.450 - 6.750 0.254 - 0.266 d1 5.200 - 5.400 0.205 - 0.213 e 5.950 - 6.250 0.234 - 0.246 e 2.240 - 2.340 0.088 - 0.092 e1 4.430 - 4.730 0.174 - 0.186 l 9.000 - 9.400 0.354 - 0.370 symbol dimension in millimeters dimension in inches to-251 package outline dimension
ssf2n60g 600v n-channel mosfet www.goodark.com page 7 of 7 rev.1.0 ordering and marking information device marking: ssf2n60g package (available) to-251 ipak operating temperature range c : -55 to 150 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to-251 80 60 4800 5 24000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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