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?2014 fairchild semiconductor corporation FCP190N65F rev. c2 www.fairchildsemi.com 1 december 2014 FCP190N65F ? n-channel superfet ? ii frfet ? mosfet absolute maximum ratings t c = 25 o c unless otherwise noted. thermal characteristics symbol parameter FCP190N65F unit v dss drain to source voltage 650 v v gss gate to source voltage - dc 20 v - ac (f > 1 hz) 30 i d drain current - continuous (t c = 25 o c) 20.6 a - continuous (t c = 100 o c) 13.1 i dm drain current - pulsed (note 1) 61.8 a e as single pulsed avalanche energy (note 2) 400 mj i ar avalanche current (note 1) 4.0 a e ar repetitive avalanche energy (note 1) 2.1 mj dv/dt mosfet dv/dt 100 v/ns peak diode recovery dv/dt (note 3) 50 p d power dissipation (t c = 25 o c) 208 w - derate above 25 o c1.67w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering, 1/8? from case for 5 seconds 300 o c symbol parameter FCP190N65F unit r jc thermal resistance, junction to case, max. 0.6 o c/w r ja thermal resistance, junction to ambient, max. 62.5 FCP190N65F n-channel superfet ? ii frfet ? mosfet 650 v, 20.6 a, 190 m features ? 700 v @ t j = 150c ?typ. r ds(on) = 168 m ? ultra low gate charge (typ. q g = 60 nc) ? low effective output capacitance (typ. c oss(eff.) = 304 pf) ? 100% avalanche tested ?rohs compliant applications ? lcd / led / pdp tv ? solar inverter ? ac - dc power supply description superfet ? ii mosfet is fairchil d semiconductor?s brand-new high voltage super-junction (sj) mosf et family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. this technology is tailored to minimize conduction loss, provide superior switching perfor- mance, dv/dt rate and higher avalanche energy. consequently, superfet ii mosfet is very suitable for the switching power applications such as pfc, se rver/telecom power, fpd tv power, atx power and industrial power applications. superfet ii frfet ? mosfet?s optimized body diode reverse recovery performance can remove additional component and improve system reliability. to-220 g d s g s d
www.fairchildsemi.com ?2014 fairchild semiconductor corporation FCP190N65F rev. c2 FCP190N65F ? n-channel superfet ? ii frfet ? mosfet 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted. off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics part number top mark package packing method reel size tape width quantity FCP190N65F FCP190N65F to-220 tube n/a n/a 50 units symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage v gs = 0 v, i d = 10 ma, t j = 25 c 650 - - v v gs = 0 v, i d = 10 ma, t j = 150 c 700 - - bv dss / t j breakdown voltage temperature coefficient i d = 10 ma, referenced to 25 o c - 0.72 - v/ o c i dss zero gate voltage drain current v ds = 650 v, v gs = 0 v - - 10 a v ds = 520 v, t c = 125 o c-60- i gss gate to body leakage current v gs = 20 v, v ds = 0 v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 2 ma 3 - 5 v r ds(on) static drain to source on resistance v gs = 10 v, i d = 10 a - 168 190 m g fs forward transconductance v ds = 20 v, i d = 10 a -18-s c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1 mhz - 2425 3225 pf c oss output capacitance - 2110 2805 pf c rss reverse transfer capacitance - 105 155 pf c oss output capacitance v ds = 380 v, v gs = 0 v, f = 1 mhz - 44 - pf c oss(eff.) effective output capacitance v ds = 0 v to 400 v, v gs = 0 v - 304 - pf q g(tot) total gate charge at 10v v ds = 380 v, i d = 10 a, v gs = 10 v (note 4) -6078nc q gs gate to source gate charge - 12 - nc q gd gate to drain ?miller? charge - 25 - nc esr equivalent series resistance f = 1 mhz - 0.6 - t d(on) turn-on delay time v dd = 380 v, i d = 10 a, v gs = 10 v, r g = 4.7 (note 4) -2560ns t r turn-on rise time - 11 32 ns t d(off) turn-off delay time - 62 134 ns t f turn-off fall time - 4.2 18 ns i s maximum continuous drain to source diode forward current - - 20.6 a i sm maximum pulsed drain to source diode forward current - - 61.8 a v sd drain to source diode forward voltage v gs = 0 v, i sd = 10 a - - 1.2 v t rr reverse recovery time v gs = 0 v, i sd = 10 a, di f /dt = 100 a/ s - 105 - ns q rr reverse recovery charge - 515 - nc notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature. 2. i as = 4 a, r g = 25 , starting t j = 25 c. 3. i sd 10 a, di/dt 200 a/ s, v dd 380 v, starting t j = 25 c. 4. essentially independent of operating temperature typical characteristics. www.fairchildsemi.com ?2014 fairchild semiconductor corporation FCP190N65F rev. c2 FCP190N65F ? n-channel superfet ? ii frfet ? mosfet 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.3 1 10 1 10 100 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 345678 0.1 1 10 100 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 1428425670 0.1 0.2 0.3 0.4 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.0 0.3 0.6 0.9 1.2 1.5 0.001 0.01 0.1 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 100 1000 0.1 1 10 100 1000 10000 50000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 1326395265 0 2 4 6 8 10 *note: i d = 10a v ds = 130v v ds = 325v v ds = 520v v gs , gate-source voltage [v] q g , total gate charge [nc] www.fairchildsemi.com ?2014 fairchild semiconductor corporation FCP190N65F rev. c2 FCP190N65F ? n-channel superfet ? ii frfet ? mosfet 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case t emperature figure 11. eoss vs. drain to source voltage -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 10ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.5 1.0 1.5 2.0 2.5 *notes: 1. v gs = 10v 2. i d = 10a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] 0.1 1 10 100 1000 0.01 0.1 1 10 100 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 4 8 12 16 20 24 i d , drain current [a] t c , case temperature [ o c] 0 140 280 420 560 700 0 2.4 4.8 7.2 9.6 12.0 e oss , [ j] v ds , drain to source voltage [v] www.fairchildsemi.com ?2014 fairchild semiconductor corporation FCP190N65F rev. c2 FCP190N65F ? n-channel superfet ? ii frfet ? mosfet 5 typical performance characteristics (continued) figure 12 . transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.001 0.01 0.1 1 z jc (t), thermal response [ o c/w ] 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.6 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse rectangular pulse duration [sec] t 1 p dm t 2 www.fairchildsemi.com ?2014 fairchild semiconductor corporation FCP190N65F rev. c2 FCP190N65F ? n-channel superfet ? ii frfet ? mosfet 6 figure 13. gate charge test circuit & waveform figure 14. resistive switching test circuit & waveforms figure 15. unclamped inductive switching test circuit & waveforms www.fairchildsemi.com ?2014 fairchild semiconductor corporation FCP190N65F rev. c2 FCP190N65F ? n-channel superfet ? ii frfet ? mosfet 7 figure 16. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- www.fairchildsemi.com ?2014 fairchild semiconductor corporation FCP190N65F rev. c2 FCP190N65F ? n-channel superfet ? ii frfet ? mosfet 8 mechanical dimensions figure 17. to220, molded, 3-lead, non jedec variation ab package drawings are provided as a service to customers considering fairchild com ponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt220-003 www.fairchildsemi.com 9 ?2014 fairchild semiconductor corporation FCP190N65F rev. c2 FCP190N65F ? n-channel superfet ? ii frfet ? mosfet life support policy fairchild?s products are not authorized fo r use as critical components in life support devic es or systems without the express written approval of fairchild se miconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life suppo rt, device, or system whose failure to perform c an be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fa irchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. accupower? attitudeengine? awinda ? ax-cap ? * bitsic? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? fps? f-pfs? frfet ? global power resource sm greenbridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motiongrid ? mti ? mtx ? mvn ? mwsaver ? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* tinyboost ? tinybuck ? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? xsens? ? ? *trademarks of system general corporation, us ed under license by fairchild semiconductor. ? ? anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experi ence many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of product ion and manufacturing delays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairch ild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have fu ll traceability, meet fairch ild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for par ts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i73 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive lis t of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. to obtain the latest, most up-to-date datasheet and pr oduct information, visit our website at http://www.fairchildsemi.com . fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it co nvey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fair child?s worldwide terms and conditions, specifically the warranty therein, which covers these products. tm ? 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