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aft18h357--24nr6 1 rf device data freescale semiconductor, inc. rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 63 w asymmetrical doherty rf power ldmos transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 mhz. 1800 mhz ? typical doherty single--carrier w--cdma performance: v dd =28vdc, i dqa = 800 ma, v gsb =0.9v,p out = 63 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) 1805 mhz 17.5 48.7 7.6 ?37.5 1840 mhz 17.6 48.3 7.7 ?38.9 1880 mhz 17.4 48.2 7.7 ?38.5 features ? advanced high performance in--package doherty ? high thermal conductivity packaging technology for reduced thermal resistance ? greater negative gate--source voltage r ange for improved class c operation ? designed for digital predistorti on error corre ction systems document number: aft18h357--24n rev. 0, 5/2015 freescale semiconductor technical data 1805?1880 mhz, 63 w avg., 28 v airfast rf power ldmos transistor aft18h357--24nr6 1. device cannot operate with the v dd current supplied through pin 3 and pin 6. (top view) rf outa /v dsa rf outb /v dsb rf ina /v gsa rf inb /v gsb vbw a (1) 6 3 15 24 carrier peaking vbw b (1) figure 1. pin connections note: exposed backside of the package is the source terminal for the transistors. om--1230--4l2l plastic ? freescale semiconductor, inc., 2015. a ll rights reserved.
2 rf device data freescale semiconductor, inc. aft18h357--24nr6 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +65 vdc gate--source voltage v gs ?6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 75 ? c, 63 w avg., w--cdma, 28 vdc, i dqa = 800 ma, v gsb =0.7vdc, 1840 mhz r ? jc 0.23 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics -- side a (4) gate threshold voltage (v ds =10vdc,i d = 140 ? adc) v gs(th) 0.8 1.2 1.6 vdc gate quiescent voltage (v dd =28vdc,i da = 800 madc, measured in functional test) v gsa(q) 1.4 1.8 2.2 vdc drain--source on--voltage (v gs =10vdc,i d =1.4adc) v ds(on) 0.1 0.2 0.3 vdc on characteristics -- side b (4) gate threshold voltage (v ds =10vdc,i d = 240 ? adc) v gs(th) 0.8 1.2 1.6 vdc drain--source on--voltage (v gs =10vdc,i d =2.4adc) v ds(on) 0.1 0.2 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http:// www.freescale.com/rf/calculators. 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf and search for an1955. 4. each side of device measured separately. (continued)
aft18h357--24nr6 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 800 ma, v gsb =0.9v, p out = 63 w avg., f = 1805 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 16.2 17.5 19.2 db drain efficiency ? d 42.0 48.7 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 6.9 7.6 ? db adjacent channel power ratio acpr ? ?37.5 ?30.0 dbc load mismatch (2) (in freescale doherty test fixture, 50 ohm system) i dqa = 800 ma, v gsb = 0.9 v, f = 1840 mhz, 100 ? sec(on), 10% duty cycle vswr 10:1 at 32 vdc, 339 w pulsed cw output power (3 db input overdrive from 190 w pulsed cw rated power) no device degradation typical performance (2) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 800 ma, v gsb =0.9vdc, 1805?1880 mhz bandwidth p out @ 1 db compression point, cw p1db ? 200 ? w p out @ 3 db compression point (3) p3db ? 316 ? w am/pm (maximum value measured at the p3db compression point across the 1805--1880 mhz bandwidth) ? ? ?16 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 60 ? mhz gain flatness in 75 mhz bandwidth @ p out =63wavg. g f ? 0.3 ? db gain variation over temperature (?30 ? cto+85 ? c) ? g ? 0.004 ? db/ ? c output power variation over temperature (?30 ? cto+85 ? c) ? p1db ? 0.008 ? db/ ? c table 6. ordering information device tape and reel information package aft18h357--24nr6 r6 suffix = 150 units, 56 mm tape width, 13--inch reel om--1230--4l2l 1. part internally matched both on input and output. 2. measurements made with device in an a symmetrical doherty configuration. 3. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf.
4 rf device data freescale semiconductor, inc. aft18h357--24nr6 figure 2. aft18h357--24nr6 test circuit component layout v gga v dda -- -- cut out area c p c1 c9 r1 c5 c11 c3 c21 z1 r3 c17 c18 c6 c19 r2 c2 c10 d65431 aft18h357--24n rev. 1 v ggb v ddb c14 c4 c22 c12 c16 c8* c7* c13 c15 *c7 and c8 are mounted vertically. note: c20 component not used. table 7. aft18h357--24nr6 test circuit component designations and values part description part number manufacturer c1, c2, c3, c4 20 pf chip capacitors atc600f200jt250xt atc c5, c6 12 pf chip capacitors atc600f120jt250xt atc c7 6.2 pf chip capacitor atc600f6r2jt250xt atc c8 6.8 pf chip capacitor atc600f6r8jt250xt atc c9, c10, c11, c12, c13, c14 10 ? f chip capacitors c5750x7r1h106m230kb tdk c15, c16 220 ? f, 100 v electrolytic capacitors eev-fk2a221m panasonic-ecg c17 0.8 pf chip capacitor atc600f0r8bt250xt atc c18 1 pf chip capacitor atc600f1r0bt250xt atc c19 1.2 pf chip capacitor atc600f1r2bt250xt atc c21, c22 2.2 ? f chip capacitors c3225x7r2a225k230ab tdk r1, r2 2.2 ? , 1/4 w chip resistors crcw12062r20jnea vishay r3 50 ? , 4 w chip resistor cw12010t0050gbk atc z1 1700?2000 mhz band, 90 ? , 5 db hybrid coupler x3c19p1-05s anaren pcb rogers ro4350b, 0.020 ? , ? r =3.66 d65431 mtl
aft18h357--24nr6 5 rf device data freescale semiconductor, inc. typical characteris tics ? 1805?1880 mhz parc (db) ?2.5 ?2.1 ?2.2 ?2.3 ?2.4 ?2.6 1760 f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 63 watts avg. 16.8 17.8 17.7 17.6 ?39 51 50 49 48 ?34 ?35 ?36 ?37 ? d , drain efficiency (%) g ps , power gain (db) 17.5 17.4 17.3 17.2 17.1 17 16.9 1780 1800 1820 1840 1860 1880 1900 1920 47 ?38 acpr (dbc) figure 4. intermodulation distortion products versus two--tone spacing two?tone spacing (mhz) 10 ?75 0 ?15 ?30 ?60 1 250 imd, intermodulatio n distortion (dbc) ?45 figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) ?1 ?3 30 0 ?2 ?4 output compression at 0.01% probability on ccdf (db) 5 55 80 130 0 60 50 40 30 20 10 ? d ? drain efficiency (%) 105 ? d acpr parc acpr (dbc) ?55 ?25 ?30 ?35 ?45 ?40 ?50 19 g ps , power gain (db) 18.5 18 17.5 17 16.5 16 g ps ?5 1 acpr parc g ps v dd =28vdc,p out =63w(avg.),i dqa = 800 ma, v gsb =0.9vdc single--carrier w--cdma, 3.84 mhz channel bandwidth im3--u im5--u im7--l im7--u im3--l 100 ?1 db = 34.8 w 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0. 01% probab ility on ccdf ?2 db = 55.0 w ?3 db = 75.8 w v dd =28vdc,i dqa = 800 ma, v gsb =0.9vdc f = 1840 mhz, single--carrier w--cdma ? d input signal par = 9.9 db @ 0.01% pr obabilit y on ccdf im5--l v dd =28vdc,p out = 130 w (pep), i dqa = 800 ma v gsb = 0.9 vdc, two--tone measurements (f1 + f2)/2 = center frequency of 1840 mhz
6 rf device data freescale semiconductor, inc. aft18h357--24nr6 typical characteris tics ? 1805?1880 mhz 1 p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power ?10 ?20 10 0 60 50 40 30 20 ? d , drain efficiency (%) g ps , power gain (db) 22 20 10 100 400 10 ?60 acpr (dbc) 18 16 14 0 ?30 ?40 ?50 figure 7. broadband frequency response 8 20 f, frequency (mhz) v dd =28vdc p in =0dbm i dqa = 800 ma v gsb =0.9vdc 16 14 12 gain (db) 18 10 1600 1680 1760 1840 1920 2000 2080 2160 2240 gain acpr ? d 1805 mhz g ps 1840 mhz 1880 mhz 1880 mhz 1840 mhz 1805 mhz 1805 mhz 1840 mhz 1880 mhz v dd =28vdc,i dqa = 800 ma, v gsb =0.9vdc single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% pr obabilit y on ccdf 12
aft18h357--24nr6 7 rf device data freescale semiconductor, inc. table 8. carrier side load pull performance ? maximum power tuning v dd =28vdc,i dqa = 818 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.25 ? j3.37 1.01 + j3.46 1.37 ? j3.14 19.2 51.6 145 56.5 ?10 1840 1.53 ? j3.73 1.22 + j3.66 1.35 ? j3.34 18.9 51.6 146 55.3 ?10 1880 1.82 ? j4.02 1.55 + j3.98 1.32 ? j3.25 19.1 51.5 142 55.4 ?11 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.25 ? j3.37 0.95 + j3.58 1.34 ? j3.29 17.0 52.4 173 57.9 ?14 1840 1.53 ? j3.73 1.13 + j3.82 1.32 ? j3.39 16.8 52.4 175 57.1 ?15 1880 1.82 ? j4.02 1.51 + j4.18 1.35 ? j3.58 16.7 52.3 170 55.6 ?16 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 9. carrier side load pull performance ? maximum drain efficiency tuning v dd =28vdc,i dqa = 818 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.25 ? j3.37 1.00 + j3.59 2.78 ? j2.07 21.6 49.9 97 69.1 ?15 1840 1.53 ? j3.73 1.19 + j3.79 2.61 ? j1.97 21.6 49.8 96 68.8 ?17 1880 1.82 ? j4.02 1.56 + j4.13 2.43 ? j1.75 21.8 49.4 87 67.3 ?19 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.25 ? j3.37 0.91 + j3.67 2.69 ? j1.94 19.7 50.5 111 70.0 ?23 1840 1.53 ? j3.73 1.10 + j3.88 2.51 ? j2.05 19.5 50.6 115 69.4 ?23 1880 1.82 ? j4.02 1.44 + j4.27 2.17 ? j2.01 19.5 50.5 111 67.7 ?25 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data freescale semiconductor, inc. aft18h357--24nr6 table 10. peaking side load pull performance ? maximum power tuning v dd =28vdc,v gsb =0.8vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.00 ? j3.10 0.73 + j3.40 1.62 ? j4.46 15.0 53.6 230 54.3 ?25 1840 0.92 ? j3.29 0.81 + j3.51 1.73 ? j4.64 15.4 53.6 229 55.1 ?30 1880 1.42 ? j3.53 1.14 + j3.76 1.80 ? j4.91 15.2 53.6 227 54.1 ?30 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.00 ? j3.10 0.73 + j3.48 1.73 ? j4.60 13.0 54.2 262 56.4 ?32 1840 0.92 ? j3.29 0.82 + j3.62 1.78 ? j4.89 13.2 54.2 263 55.4 ?37 1880 1.42 ? j3.53 1.21 + j3.91 1.88 ? j5.16 13.1 54.1 259 54.2 ?37 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 11. peaking side load pull performance ? maximum drain efficiency tuning v dd =28vdc,v gsb =0.8vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.00 ? j3.10 0.64 + j3.39 3.45 ? j2.79 16.5 52.0 158 67.6 ?34 1840 0.92 ? j3.29 0.70 + j3.48 3.30 ? j2.43 16.8 51.6 145 67.5 ?39 1880 1.42 ? j3.53 0.95 + j3.69 2.79 ? j1.51 16.4 50.4 110 67.9 ?44 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.00 ? j3.10 0.68 + j3.48 3.74 ? j3.07 14.4 52.5 177 67.7 ?43 1840 0.92 ? j3.29 0.75 + j3.59 3.48 ? j2.43 14.8 52.0 159 67.6 ?51 1880 1.42 ? j3.53 1.09 + j3.87 2.97 ? j2.83 14.6 52.3 172 67.2 ?49 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
aft18h357--24nr6 9 rf device data freescale semiconductor, inc. p1db -- typical carrier load pull contours ? 1840 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 8. p1db load pull output power contours (dbm) real ( ? ) 0 -- 2 imaginary ( ? ) 1.5 2 2.5 0.5 3.5 -- 1 -- 4 -- 5 1 figure 9. p1db load pull efficiency contours (%) real ( ? ) figure 10. p1db load pull gain contours (db) real ( ? ) figure 11. p1db load pull am/pm contours ( ? ) real ( ? ) 3 -- 3 0 -- 2 imaginary ( ? ) 1.5 2 2.5 0.5 3.5 -- 1 -- 4 -- 5 13 -- 3 0 -- 2 imaginary ( ? ) 1.5 2 2.5 0.5 3.5 -- 1 -- 4 -- 5 13 -- 3 0 -- 2 imaginary ( ? ) 1.5 2 2.5 0.5 3.5 -- 1 -- 4 -- 5 13 -- 3 47.5 p e 48.5 48 49 49.5 50 50.5 51 51.5 54 52 56 p e 58 60 62 64 66 68 p e 18.5 19 19.5 20 20.5 21 21.5 22 22.5 -- 1 8 -- 1 6 -- 1 4 -- 1 0 -- 8 -- 1 2 -- 2 0 p e -- 2 2
10 rf device data freescale semiconductor, inc. aft18h357--24nr6 p3db -- typical carrier load pull contours ? 1840 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 12. p3db load pull output power contours (dbm) real ( ? ) 0 -- 2 imaginary ( ? ) 1.5 2 2.5 0.5 3.5 -- 1 -- 4 -- 5 1 figure 13. p3db load pull efficiency contours (%) real ( ? ) figure 14. p3db load pull gain contours (db) real ( ? ) figure 15. p3db load pull am/pm contours ( ? ) real ( ? ) 3 -- 3 0 -- 2 imaginary ( ? ) 1.5 2 2.5 0.5 3.5 -- 1 -- 4 -- 5 13 -- 3 0 -- 2 imaginary ( ? ) 1.5 2 2.5 0.5 3.5 -- 1 -- 4 -- 5 13 -- 3 0 -- 2 imaginary ( ? ) 1.5 2 2.5 0.5 3.5 -- 1 -- 4 -- 5 13 -- 3 -- 1 8 -- 1 6 -- 1 4 p e -- 1 2 -- 2 0 16.5 17 p e 54 62 p e 64 p e 48.5 49 50 49.5 50.5 51 51.5 52 56 58 60 66 68 64 17.5 18 18.5 19 19.5 20 20.5 -- 2 2 -- 2 4 -- 2 6 -- 2 8
aft18h357--24nr6 11 rf device data freescale semiconductor, inc. p1db -- typical peaking load pull contours ? 1840 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 16. p1db load pull output power contours (dbm) real ( ? ) 0 -- 2 imaginary ( ? ) 1.5 2 2.5 1 4.5 -- 1 -- 4 -- 7 figure 17. p1db load pull efficiency contours (%) real ( ? ) figure 18. p1db load pull gain contours (db) real ( ? ) figure 19. p1db load pull am/pm contours ( ? ) real ( ? ) 3 -- 3 1 -- 5 -- 6 3.5 4 0 -- 2 imaginary ( ? ) 1.5 2 2.5 1 4.5 -- 1 -- 4 -- 7 3 -- 3 1 -- 5 -- 6 3.5 4 0 -- 2 imaginary ( ? ) 1.5 2 2.5 1 4.5 -- 1 -- 4 -- 7 3 -- 3 1 -- 5 -- 6 3.5 4 0 -- 2 imaginary ( ? ) 1.5 2 2.5 1 4.5 -- 1 -- 4 -- 7 3 -- 3 1 -- 5 -- 6 3.5 4 p e 50 49.5 p e 13.5 13 p e -- 2 8 p e 50.5 51 51.5 52 52.5 53 53.5 52 54 56 58 60 62 64 66 14 14.5 15 15.5 16 16.5 -- 3 0 -- 3 2 -- 3 4 -- 3 6 -- 3 8 -- 4 0 -- 4 2 -- 4 4 15 15.5 16
12 rf device data freescale semiconductor, inc. aft18h357--24nr6 p3db -- typical peaking load pull contours ? 1840 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 20. p3db load pull output power contours (dbm) real ( ? ) 0 -- 2 imaginary ( ? ) 1.5 2 2.5 1 4.5 -- 1 -- 4 -- 7 figure 21. p3db load pull efficiency contours (%) real ( ? ) figure 22. p3db load pull gain contours (db) real ( ? ) figure 23. p3db load pull am/pm contours ( ? ) real ( ? ) 3 -- 3 1 -- 5 -- 6 3.5 4 0 -- 2 imaginary ( ? ) 1.5 2 2.5 1 4.5 -- 1 -- 4 -- 7 3 -- 3 1 -- 5 -- 6 3.5 4 0 -- 2 imaginary ( ? ) 1.5 2 2.5 1 4.5 -- 1 -- 4 -- 7 3 -- 3 1 -- 5 -- 6 3.5 4 0 -- 2 imaginary ( ? ) 1.5 2 2.5 1 4.5 -- 1 -- 4 -- 7 3 -- 3 1 -- 5 -- 6 3.5 4 p e 50.5 50 51 51.5 52 52.5 53 53.5 54 52.5 52.5 52 p e 54 56 58 60 62 64 66 11.5 11 p e 12 12.5 13 13.5 14 14.5 13 13.5 14 -- 3 8 p e -- 4 0 -- 4 6 -- 4 4 -- 4 8 -- 5 0 -- 5 2 -- 5 4 -- 4 2
aft18h357--24nr6 13 rf device data freescale semiconductor, inc. package dimensions
14 rf device data freescale semiconductor, inc. aft18h357--24nr6
aft18h357--24nr6 15 rf device data freescale semiconductor, inc.
16 rf device data freescale semiconductor, inc. aft18h357--24nr6 product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in over--molded plastic packages ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .freescale.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 may 2015 ? initial release of data sheet
aft18h357--24nr6 17 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2015 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: aft18h357--24n rev. 0, 5/2015

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