technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn power silicon switching transistor qualified per mil-prf-19500/455 t4-lds-0062 rev. 1 (081095) page 1 of 3 devices levels 2n5664 2n5666 2n5667 jan 2n5665 2n5666s 2n5667s jantx 2N5666U3 jantv jans absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol 2n5664 2n5666, s 2n5665 2n5667, s unit collector-emitter voltage v ceo 200 300 vdc collector-base voltage v cbo 250 400 vdc emitter-base voltage v ebo 6.0 vdc base current i b 1.0 adc collector current i c 5.0 adc 2n5664 2n5665 2n5666, s 2n5667, s 2N5666U3 total 1/ power dissipation @ t a = +25c @ t c = +100c p t 2.5 30 1.2 15 1.5 35 w operating & storage junction temperature range t j , t stg -65 to +200 c note: 1) consult 19500/455 for thermal derating curves. electrical characteristics (t c = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics collector-emitter breakdown voltage i c = 10madc 2n5664, 2n5666 2n5665, 2n5667 v (br)cer 250 400 vdc emitter-base breakdown voltage i e = 10 adc v (br)ebo 6.0 vdc collector-emitter cutoff current v ce = 200vdc v ce = 300vdc 2n5664, 2n5666 2n5665, 2n5667 i ces 0.2 0.2 adc collector-base cutoff current v cb = 200vdc v cb = 250vdc 2n5664, 2n5666 0.1 1.0 adc madc v cb = 300vdc v cb = 400vdc 2n5665, 2n5667 i cbo 0.1 1.0 adc madc to-66 (to-213aa) 2n5664, 2n5665 to-5 2n5666, 2n5667 to-39 (to-205ad) 2n5666s, 2n5667s u-3 2N5666U3 downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn power silicon switching transistor qualified per mil-prf-19500/455 t4-lds-0062 rev. 1 (081095) page 2 of 3 electrical characteristics (cont) parameters / test conditions symbol min. max. unit on charactertics forward-current transfer ratio i c = 0.5adc, v ce = 2.0vdc 2n5664, 2n5666 2n5665, 2n5667 40 25 i c = 1.0adc, v ce = 5.0vdc 2n5664, 2n5666 2n5665, 2n5667 40 25 120 75 i c = 3.0adc, v ce = 5.0vdc 2n5664, 2n5666 2n5665, 2n5667 15 10 i c = 5.0adc, v ce = 5.0vdc all types h fe 5.0 collector-emitter saturation voltage i c = 3.0adc, i b = 0.3adc 2n5664, 2n5666 0.4 i c = 3.0adc, i b = 0.6adc 2n5665, 2n5667 0.4 i c = 5.0adc, i b = 1.0adc all types v ce(sat) 1.0 vdc base-emitter saturation voltage i c = 3.0adc, i b = 0.3adc 2n5664, 2n5666 1.2 i c = 3.0adc, i b = 0.6adc 2n5665, 2n5667 1.2 i c = 5.0adc, i b = 1.0adc all types v be(sat) 1.5 vdc dynamic characteristics forward current transfer ratio i c = 0.5adc, v ce = 5.0vdc, f = 10mhz |h fe | 2.0 7.0 output capacitance v cb = 10vdc, i e = 0, 100khz f 1.0mhz c obo 120 pf switching characteristics parameters / test conditions symbol min. max. unit turn-on time v cc = 100vdc; i c = 1.0adc; i b1 = 30madc t on 0.25 s turn-off time v cc = 100vdc; i c = 1.0adc; i b1 = -i b2 = 50madc 2n5664, 2n5666 2n5665, 2n5667 t off 1.5 2.0 s downloaded from: http:///
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com npn power silicon switching transistor qualified per mil-prf-19500/455 t4-lds-0062 rev. 1 (081095) page 3 of 3 safe operating area dc tests t c = 100c, 1 cycle, t 1.0s, t r + t f = 10 s test 1 v ce = 6.0vdc, i c = 5.0adc v ce = 3.0vdc, i c = 5.0adc 2n5664 , 2n5665 2n5666, 2n5667 test 2 v ce = 32vdc, i c = 0.75adc v ce = 40vdc, i c = 0.75adc v ce = 29vdc, i c = 0.4adc v ce = 37.5vdc, i c = 0.4adc 2n5664 2n5665 2n5666 2n5667 test 3 v ce = 200vdc, i c = 29madc v ce = 200vdc, i c = 19madc v ce = 300vdc, i c = 21madc v ce = 300vdc, i c = 14madc 2n5664 2n5666 2n5665 2n5667 (2) pulse test: pulse width = 300s, duty cycle 2.0% downloaded from: http:///
|
