www.excelitas.com page 1 of 6 PGEW multi - epi series rev.2016 - 05 datasheet photon detection pg ew series of single - and multi - epi 905 nm pulsed semiconductor lasers low - cost high - power laser - diode family excelitas technologies PGEW series of s ingle - and m ulti - epi 905 nm p ulsed s emiconductor l asers consists of a series of devices having up to four active lasing layers epitaxially grown on a single gaas substrate chip. this multi - layer design multiplies the output power by the number of epi - layers. for example, the qPGEW quad laser at 225 m active layer width, which has four epitaxially grown lasing layers, delivers an output peak power close to 100 w. the t1 ? (to - like) plastic encapsulated package complements excelitas' epi - cavity lasers in hermetic metal packages and are ideally suited for high volume applications. the lasers employ excelitas novel multi - active area laser chips to deliver high output power in a small emitting area. the laser chips of the PGEW family feature stripe widths of 75 and 225 m and come as single (PGEW), double (dPGEW), triple (tPGEW), or quadruple (qPGEW) epi - cavity version. these devices possess a 25 beam divergence in the direction perpendicular to chip surface and a 10 beam spread within the junction plane. the power output shows an excellent stability over the full mil specification temperature range. structures are fabricated using m etal organic chemical vapour deposition (mocvd). where fiber coupling applications are concerned, the transverse spacing of the epi - cavity active area concentrates more optical power into a smaller geometry allowing for increased optical power coupling in to optical fibers . peak wavelength is centered near the maximum responsivity of most silicon photodiodes. the PGEW lasers match especially well with devices from the excelitas epi - apd family c30737. the devices are ideally suited for applications where cos t is a primary concern and high volume production capacity is required. key features ? doubling, tripling or quadrupling of the output power from a single epi - cavity chip with a small active area ? ? ? ? ? applications ? ? ? ? the PGEW seri es is ideal for commercial range finding applications. intensity of light is shown from single - cavity, dual - cavity, triple - cavity and quad - cavity lasers .
www.excelitas.com page 2 of 6 PGEW multi - epi series rev.2016 - 0 5 PGEW series of single - epi and multi - e pi 905 nm pulsed semiconductor lasers low - cost high - power laser - diode family for commercial range finding table 1 : PGEW pulsed laser family selection guide total # of emitting stripes typical peak power a t i fm , 100 ns , 10a a t i fm , 100 ns , 30a device description 3 mils ( 75 m ) stripe width 9 mils ( 22 5 m ) stripe width pg ew 1 s xx h single chip laser C single epi - cavity 1 6 .5 w 2 3 w dpg ew 1 s xx h single chip laser C double epi - cavity 2 1 3 w 45 w tpg ew 1 s xx h single chip laser C triple epi - cavity 3 2 0 w 7 0 w qpg ew 1 s xx h single chip laser C quad epi - cavity 4 2 5 w 85 w table 2 : maximum ratings parameter symbol min max units peak reverse voltage v rm 2 v pulse duration t w 1 00 ns duty factor du 0.1 % storage temperature t s - 55 105 c operating temperature t op - 55 85 c soldering for 5 seconds (leads only) +260 c table 3 : generic electro optical specifications at 23 c parameter symbol min typ max units center wavelength of spectral envelope c 895 905 915 nm spectral bandwidth at 50% intensity points ? 5 nm wavelength temperature coefficient ?/t 0.25 nm/c beam spread (50% peak intensity) parallel to junction plane || 10 degrees beam spread (50% peak intensity) perpendicular to junction plane | 25 degrees table 4 : 75m stripe width family: operating characteristics at t op = 23 c, i fm = 10a, t w = 1 0 0ns, prr = 1 k hz parameter PGEW1s03h dPGEW1s03h tPGEW1s03h qPGEW1s03h 1 unit s minimum optical power at i fm p omin 6 12 18 2 2.5 w typical optical power at i fm p o typ 6 .5 13 20 2 5 w # of emitting stripes - 1 2 3 4 emitting area 75 x 1 75 x 5 75 x 10 75 x 15 m maximum peak forward current i fm 10 10 10 10 a typical lasing threshold current i th 0.5 0. 7 5 0.75 0.75 a typical forward voltage at i fm 2 v f 2.4 6.4 10.6 14.7 v typical series resistance r 0.10 0.23 0.41 0.52 ? typical bandgap voltage drop v g 1.4 4.1 6.5 9.5 v 1. operating pulse width for the qPGEW1s03h is 50ns 2. excluding the voltage drop contribution due to the inductive element of the package , a s estimated by .
www.excelitas.com page 3 of 6 PGEW multi - epi series rev.2016 - 0 5 PGEW series of single - epi and multi - e pi 905 nm pulsed semiconductor lasers low - cost high - power laser - diode family for commercial range finding table 5 : 22 5m stripe width family: operating characteristics at t op =23oc, i fm = 3 0a , t w =100ns , prr = 1 kh z parameter PGEW1s09h dPGEW1s09h tPGEW1s09h qPGEW1s09h 3 unit s minimum optical power at i fm p omin 21 42 65 78 w typical optical power at i fm p o typ 2 3 45 70 85 w # of emitting stripes - 1 2 3 4 emitting area 22 5 x 1 22 5 x 5 22 5 x 10 22 5 x 15 m maximum peak forward current i fm 3 0 3 0 3 0 3 0 a typical lasing threshold current i th 1.5 1. 7 5 1. 7 5 1. 7 5 a typical forward voltage at i fm 4 v f 3.2 8 12.8 17.3 v typical series resistance r s 0.06 0.13 0. 21 0.26 ? typical bandgap voltage drop v g 1.4 4.1 6.5 9.5 v 3. operating pulse width for the qPGEW1s03h is 50ns 4. excluding the voltage drop contribution due to the i nductive element of the package , a s estimated by . ordering guide x p g a x x s xx h double active area d triple active area t quadruple active area q pulsed p 905 nm nominal centre wavelength g 1 0 nm centre wavelength tolerance e plastic t1 ?w package w single chip stack 1 stackable chip s 0.003 wide laser stripe (75 m) 03 0.009 wide laser stripe (225 m) 09 rohs compliance h electro - optical characteristics figure 1 left : total peak radiant intensity vs. peak drive current right : spectral distribution plot 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100 total peak radiant intensity as a ratio of the maximum output power at the maximum rated current [%] peak drive current as a ratio of the maximum rated current 0 10 20 30 40 50 60 70 80 90 100 880 890 900 910 920 930 relative radiant intensity [%] wavelength [nm]
www.excelitas.com page 4 of 6 PGEW multi - epi series rev.2016 - 0 5 PGEW series of single - epi and multi - e pi 905 nm pulsed semiconductor lasers low - cost high - power laser - diode family for commercial range finding figure 2 left : far field pattern parallel to junction plane right : far field pattern perpendicular to junction plane figure 3 radiant intensity vs. pulse width for safe operation left : PGEW, dPGEW and tPGEW lasers right : qPGEW lasers figure 4 : package drawings (w package) dimensions are in mm [inches] , are for reference only and subject to change without notice. 0 10 20 30 40 50 60 70 80 90 100 -30 -20 -10 0 10 20 30 relative radiant intensity [%] angle [degrees] 0 10 20 30 40 50 60 70 80 90 100 -50 -40 -30 -20 -10 0 10 20 30 40 50 relative radiant intensity [%] angle [degrees] 10 100 1000 1 10 100 relative radiant intensity [%] pulse width at fwhm [ns] safe operating region 10 100 1000 1 10 100 relative radiant intensity [%] pulse width at fwhm [ns] safe operating region
www.excelitas.com page 5 of 6 PGEW multi - epi series rev.2016 - 0 5 PGEW series of single - epi and multi - e pi 905 nm pulsed semiconductor lasers low - cost high - power laser - diode family for commercial range finding operating conditions the laser is operated by pulsing current in the forward bias direction. the excelitas warranty applies only to devices operated within the maximum rating, as specified. exceeding these conditions is likely to cause permanent burn off damage to the laser facet and consequently a significa nt reduction in optical power. operating the device s at increased duty cycles will ultimately and irreparably damage the crystal structure d ue to internal heating effects. diodes are static sensitive and suitable precautions should be taken when removing the units from their antistatic containers. circuits should be designed to protect the diodes from high current and reverse voltage transients. voltages exceeding the reverse breakdown of the semiconductor junction are particularly damaging and have been shown to cau se degradation of power output. although the devices will continue to perform well at elevated temperatures for some thousands of hours, defect mechanisms are accelerated. optimum long term reliability will be attained with the semiconducto r at or below room temperature. adequate heat sinking sho uld be employed when operated at maximum duty factor. for your safety laser radiation: under operation, these devices produce invisible electromagnetic radiation that may be harmful to the human eye. to ensure that these laser components meet the requir ements of class iiib laser products, they must not be operated outside their maximum ratings. power supplies used with these components must be such that the maximum peak forward current cannot be exceeded. it is the responsibility of the user incorporatin g a laser into a system to certify the class of use and ensure that it meets the requirements of the ansi or appropriate authority. further details can be obtained in the following publications: 21cfr 1040.10 C performance standards for light emitting products (laser products) ansi z136.1 C american national standard for safe use of lasers iec 60825 - 1 C safety of laser products rohs compliance this series of laser diodes are designed and built to be fully compliant with the european union directive 2011/65/eu C restriction of the use of certain hazardous substances (rohs) in electrical and electronic equipment.
www.excelitas.com page 6 of 6 PGEW multi - epi series rev.2016 - 0 5 PGEW series of single - epi and multi - e pi 905 nm pulsed semiconductor lasers low - cost high - power laser - diode family for commercial range finding warranty a standard 12 - month warranty following shipment applies. any warranty is null and void if the package window has been opened. excelitas technologies 22001 dumberry road vaudreuil - dorion, quebec canada j7v 8p7 telephone: (+1) 450 424 3300 toll - free: (+1) 800 775 6786 fax: (+1) 450 424 3345 detection@excelitas.com excelitas technologies gmbh & co. kg wenzel - jaksch - str. 31 d - 65199 wiesbaden germany telephone: (+49) 611 492 430 fax: (+49) 611 492 165 detection.europe@excelitas.com excelitas technologies singapore, pte. ltd. 8 tractor road singapore 627969 telephone: (+65) 6775 2022 (main number) telephone: (+65) 6770 4366 (customer service) fax: (+65) 6778 - 1752 detection.asia@excelitas.com for a complete listing of our global offices, visit www.excelitas.com/locations ? 201 3 excelitas technologies corp. all rights reserved. the excelitas logo and design are registered trademarks of excelitas techno logies corp. all other trademarks not owned by excelitas technologies or its subsidiaries that are depicted herein are the property of their respective owners. excelitas reserves the right to change this document at any time without notice and disclaims liability for editorial, pictorial or typographic al errors. about excelitas technologies excelitas technologies is a global technology leader focused on delivering innovative, customized solutions to meet the lighting, detection and other high - performance technology needs of oem customers. excelitas has a long and rich history of serving our oem custom er base with optoelectronic sensors and modules for more than 45 years beginning with perkinelmer, eg&g, and rca. the constant throughout has been our innovation and commitment to delivering the highest quality solutions to our customers worldwide. from ae rospace and defense to analytical instrumentation, clinical diagnostics, medical, industrial, and safety and security applications, excelitas technologies is committed to enabling our customers' success in their specialty end - markets. excelitas technologie s has approximately 5,000 employees in north america, europe and asia, serving customers across the world.
|
