2002. 3. 7 1/2 semiconductor technical data SMAU1J ultra fast recovery rectifier diode revision no : 3 switching type power supply applications. features ultra-fast recovery time for high efficiency. low profile surface mount package. low forward voltage drop, high current capability, and low power loss. application switching power supply. dc/dc converter. home appliances, office equipment. telecommunication, factory automation. maximum rating (ta=25 1 ) sma dim millimeters a b c d e f g 4.5 0.2 2.6 0.2 1.5 0.2 5.0 0.3 1.2 0.3 2.0 0.2 0 ~ 0.15 h r 0.5 a b c h d e e 1 2 f g + _ + _ + _ + _ + _ + _ 1. anode 2. cathode electrical characteristics (ta=25 1 ) type name marking u 1 j lot no. characteristic symbol test condition min. typ. max. unit peak forward voltage v fm i fm =1.0a - - 1.7 v repetitive peak reverse current i rrm v rrm =rated - - 10 a reverse recovery time t rr i f =100ma, i r =200ma - - 75 ns thermal resistance r th(j-1) junction to lead - - 23 1 /w r th(j-a) junction to ambient (on alumina substrate) - - 108 1 /w characteristic symbol rating unit maximum repetitive peak reverse voltage v rrm 600 v average output rectitifed current i o 1 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 33 a junction temperature t j -40 150 1 storage temperature range t stg -40 150 1
2002. 3. 7 2/2 SMAU1J revision no : 3 i - v f f f forward voltage v (v) f forward current i (a) number of cycles at 60hz peak surge forward current i (a) 1 0 10 20 30 40 50 fsm 10 330 550 surge forward current (non - repetitive) 100 ta=25 c f=60mhz p - i f(av) f(av) f(av) average forward current i (a) 0 0 0.5 1.0 1.5 2.0 2.5 f(av) average forward power dissipation p (w) 0.2 0.4 0.6 0.8 1.0 1.2 rectangular waveform 180 360 ta - i f(av) f(av) average forward current i (a) 0 0 40 80 120 160 200 maximum allowable ambient temperature ta max ( c) 0.2 0.4 0.6 0.8 1.0 1.2 rectangular waveform 180 360 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 0.1 0.3 0.5 1 3 5 t =150 c 25 c j
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