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  reld effect power transistor Datasheet PDF File

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    IRFF120 IRFF121 IRFF122 IRFF123

General Electric Solid State
GE Solid State
Part No. IRFF120 IRFF121 IRFF122 IRFF123
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE power MOS FIELD-effect transistorS

File Size 161.85K  /  5 Page

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    MOTOROLA[Motorola, Inc]
Part No. MTA1N60E
Description FULLY ISOLATED TMOS E-FET power FIELD effect transistor
Fully Isolated TMOS E-FET / power Rifld effect transistor

File Size 846.82K  /  13 Page

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    SSM5P05FU

Toshiba Semiconductor
Part No. SSM5P05FU
Description Field effect transistor Silicon P Channel MOS Type power Management Switch High Speed Switching Applications
TOSHIBA Field effect transistor Silicon P Channel MOS Type

File Size 132.28K  /  5 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. SSM3J02T
Description TOSHIBA Field effect transistor Silicon P Channel MOS Type
Field effect transistor Silicon P Channel MOS Type power Management Switch High Speed Switching Applications

File Size 135.95K  /  5 Page

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    SSM3J01T

Toshiba Semiconductor
Part No. SSM3J01T
Description Field effect transistor Silicon P Channel MOS Type power Management Switch High Speed Switching Applications
TOSHIBA Field effect transistor Silicon P Channel MOS Type

File Size 157.82K  /  5 Page

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    TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Part No. SSM3J02F
Description 600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field effect transistor Silicon P Channel MOS Type power Management Switch High Speed Switching Applications
TOSHIBA Field effect transistor Silicon P Channel MOS Type

File Size 152.94K  /  5 Page

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    IRFF110 IRFF111 IRFF112 IRFF113

General Electric Solid State
GE Solid State
Part No. IRFF110 IRFF111 IRFF112 IRFF113
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
power MOS Field-effect transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.

File Size 173.01K  /  5 Page

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    INFINEON[Infineon Technologies AG]
Part No. PTF080601F PTF080601E PTF080601A PTF080601
Description LDMOS RF power Field effect transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫
LDMOS RF power Field effect transistor 60 W 860-960 MHz
LDMOS RF power Field effect transistor 60 W/ 860-960 MHz

File Size 293.07K  /  6 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. SSM3J13T
Description TOSHIBA Field effect transistor Silicon P Channel MOS Type (U-MOSII)
Field effect transistor Silicon P Channel MOS Type (U-MOSII) power Management Switch High Speed Switching Applications

File Size 170.34K  /  6 Page

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    IRFD112 IRFD113

GE Solid State
Part No. IRFD112 IRFD113
Description (IRFD112 / IRFD113) power-MOSFET FIELD effect power transistor

File Size 135.03K  /  2 Page

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