N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, power, MOSFET, TO-220AB From old datasheet system N-channel enhancement mode field-effect transistor
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, power, MOSFET, TO-220AB 100V7A TMOS power Field effect transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门)) From old datasheet system TMOS power FET 27 AMPERES TMOS E-FET power Field effect transistor N-Channel Enhancement-Mode Silicon Gate
COMPLEMENTARY SILICON power transistorS COMPLEMETARY SILICON power transistorS SILICON NPN transistor HIGH VOLTAGE PNP power transistor SILICON NPN power DARLINGTON transistor RF power Field effect transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, power transistor, TO-220AB
100V4A TMOS power Field effect transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门)) TMOS power FET 14 AMPERES From old datasheet system TMOS E-FET power Field effect transistor N-Channel Enhancement-Mode Silicon Gate