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Zetex Semiconductor PLC
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| Part No. |
ZX3CDBS1M832TA
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| OCR Text |
ceo = 20v; r sat = 47m ; c = 4.5a schottky diode v r = 40v; v f = 500mv (@1a); i c =1a description packaged in the new innovative 3mm x 2mm mlp this combination dual comprises an ultra low saturation npn transistor and a 1a schottky barrier... |
| Description |
TRANS/SCHOTTKY NPN DL 3X2MM MLP 4500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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| File Size |
215.93K /
9 Page |
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WORLD PRODUCTS
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| Part No. |
WPPC-D11084
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| OCR Text |
...r emitter voltage 03: 30v(v ceo ) 035: 35v(v ceo ) 06: 60v(v ceo ) 08: 80v(v ceo ) 30: 300v(v ceo ) propagation delay time d008: 1m bit/s* d015: 1m bit/s* d35: high gain split pd* d60: high gain split... |
| Description |
SSOP Photo Coupler
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| File Size |
93.23K /
3 Page |
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Diodes
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| Part No. |
ZXTP2008ZTA
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| OCR Text |
ceo = -30v : r sat = 24m ; i c = -5.5a description packaged in the sot89 outline this new low saturation 30v pnp transistor offers low on state losses making it ideal for use in dc-dc circuits, line switching and various driving and power m... |
| Description |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
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| File Size |
107.48K /
6 Page |
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Shenzhen Jingdao Electr...
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| Part No. |
S13005A
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| OCR Text |
...v collector-emittor voltage v ceo 400 v emittor- base voltage v ebo 9 v collector current i c 4 a ta=25 1.25 power dissipation tc=25 p tot 55 w junction temperature t j 150 storage temperature t stg -55 ... |
| Description |
Bipolar Junction Transistor
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| File Size |
111.78K /
3 Page |
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Shenzhen Jingdao Electr...
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| Part No. |
S13003
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| OCR Text |
...v collector-emittor voltage v ceo 400 v emittor- base voltage v ebo 9 v collector current i c 1.5 a ta=25 1.25 power dissipation tc=25 p tot 20 w junction temperature t j 150 storage temperature t stg -5... |
| Description |
Bipolar Junction Transistor
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| File Size |
111.25K /
3 Page |
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it Online |
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Microsemi, Corp.
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| Part No. |
MRF517
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| OCR Text |
...mbol parameter value unit v ceo collector-emitter voltage 20 vdc v cbo collector-base voltage 35 vdc v ebo emitter-base voltage 3.0 vdc i c collector current 150 ma thermal data thermal data thermal d... |
| Description |
Small Signal, Up to 1 GHz, Class A, Common Emitter; fO (MHz): 0; fT (MHz): 3000; GNF (dB): 10; VCE (V): 15; IC (mA): 60; NF min (dB): 2.5; Case Style: TO-39 UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-39
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| File Size |
440.27K /
5 Page |
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it Online |
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Motorola Mobility Holdings, Inc.
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| Part No. |
MMDJ3P03BJT
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| OCR Text |
... emitter sustaining voltage e v ceo(sus) = 30 vdc (min) @ i c = 10 madc ? high dc current gain e h fe = 140 (min) @ i c = 1.2 adc = 125 (min) @ i c = 3.0 adc ? low collector emitter saturation voltage e v ce(sat) = 0.24 vdc (max) @ i c ... |
| Description |
DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES 3 A, 30 V, 2 CHANNEL, PNP, Si, POWER TRANSISTOR, SO-8
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| File Size |
120.00K /
4 Page |
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it Online |
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