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  ceo Datasheet PDF File

For ceo Found Datasheets File :: 26096    Search Time::1.219ms    
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    LDA100 LDA100S LDA100STR

IXYS Corporation
Part No. LDA100 LDA100S LDA100STR
OCR Text ...ting units breakdown voltage bv ceo 30 v p current transfer ratio (typical) 300 % saturation voltage 0.5 v input control current 1 ma applications features description ordering information pin configuration ? telecom switching ? tip/ring ...
Description Optocoupler, Bidirectional Input Single-Transistor Output

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    TOSHIBA
Part No. RN4988FS
OCR Text ...v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 7 v collector current i c 50 ma absolute maximum ratings (ta = 25c) (q2) characteristics symbol rating unit collector-base voltage v cbo ?20 v collecto...
Description Bias resistor built-in transistor (BRT), 2-in-1

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    TOSHIBA
Part No. 2SB906
OCR Text ...v collector-emitter voltage v ceo ? 60 v emitter-base voltage v ebo ? 7 v collector current i c ? 3 a base current i b ? 0.5 a ta = 25c 1.0 collector power dissipation tc = 25c p c 20 w junction temperature t j 1...
Description TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS). AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS

File Size 133.48K  /  4 Page

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    TOSHIBA
Part No. 2SB907
OCR Text ...v collector-emitter voltage v ceo ? 40 v emitter-base voltage v ebo ? 5 v collector current i c ? 3 a base current i b ? 0.3 a ta = 25c 1.0 collector power dissipation tc = 25c p c 15 w junction temperature t j 1...
Description Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

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    TOSHIBA
Part No. 2SB908
OCR Text ...v collector-emitter voltage v ceo ? 80 v emitter-base voltage v ebo ? 5 v collector current i c ? 4 a base current i b ? 0.4 a ta = 25c 1.0 collector power dissipation tc = 25c p c 15 w junction temperature t j 1...
Description Transistor Silicon PNP Epitaxial Type (PCT process) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications

File Size 129.91K  /  5 Page

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    Everlight Electronic Co., Ltd.
LITE-ON ELECTRONICS INC
Part No. 4N37-V LTV4N37-V 4N35-V LTV-4N35M LTV-4N37M LTV-4N35S LTV-4N37S 4N37M-V LTV4N37M-V 4N35M-V LTV4N35-V 4N35S-TA1 LTV4N35S-V LTV4N35STA-V LTV4N35STA1-V LTV-4N37S-TA1 LTV-4N35S-TA LTV-4N35S-TA1
OCR Text ...ssipation 4n35 4n37 i f v r p v ceo v cbo v eco i c p c p tot v iso t opr t stg t sol 60 6 100 30 70 7 100 300 350 3,550 1,500 -55~+100 -55~+150 260 ma v mw v v v ma mw mw v rms *1. ac for 1 minute, r.h. = 40 ~ 60% isolation voltage shall...
Description Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
CS:5-15,Angled Pos."D"
NPN-OUTPUT DC-INPUT OPTOCOUPLER npn型输出DC -输入光耦合
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
Dual/Triple Ultra-Low-Voltage SOT23 &#181;P Supervisory Circuits

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    2N5191G

ON Semiconductor
Part No. 2N5191G
OCR Text ... voltage 2n5190 2n5191 2n5192 v ceo 40 60 80 vdc collector?base v oltage 2n5190 2n5191 2n5192 v cbo 40 60 80 vdc emitter?base voltage v ebo 5.0 vdc collector current i c 4.0 adc base current i b 1.0 adc total device dissipation @ t c = 25 ...
Description Silicon NPN Power Transistors

File Size 81.52K  /  6 Page

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    BD243B-D

ON Semiconductor
Part No. BD243B-D
OCR Text ... emitter sustaining voltage e v ceo(sus) = 80 vdc (min) e bd243b, bd244b = 100 vdc (min) e bd243c, bd244c ? high current gain bandwidth product f t = 3.0 mhz (min) @ i c = 500 madc ? compact to220 ab package ??????????????????????? ????...
Description Complementary Silicon Plastic Power Transistors

File Size 57.61K  /  8 Page

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    BDX33B-D BDX34C

ON Semiconductor
Part No. BDX33B-D BDX34C
OCR Text ...ustaining voltage at 100 madc v ceo(sus) = 80 vdc (min.) e bdx33b, 34b 100 vdc (min.) e bdx33c, 34c ? low collectoremitter saturation voltage v ce(sat) = 2.5 vdc (max.) at i c = 3.0 adc e bdx33b, 33c/34b, 34c ? monolithic construction w...
Description Darlington Complementary Silicon Power Transistors
Power 10A 100V PNPD

File Size 56.88K  /  8 Page

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    BDX53B-D

ON Semiconductor
Part No. BDX53B-D
OCR Text ...taining voltage e @ 100 madc v ceo(sus) = 80 vdc (min) e bdx53b, 54b = 100 vdc (min) e bdx53c, 54c ? low collectoremitter saturation voltage e v ce(sat) = 2.0 vdc (max) @ i c = 3.0 adc = 4.0 vdc (max) @ i c = 5.0 adc ? monolithic cons...
Description Plastic Medium-Power Complementary Silicon Transistors

File Size 69.83K  /  8 Page

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