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IRF[International Rectifier]
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| Part No. |
JANSF2N7389 IRHF9130 IRHF93130 JANSR2N7389
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| OCR Text |
...s
o
C
300 ( 0.063 in. (1.6mm) from case for 10s) 0.98 (typical)
g
www.irf.com
1
2/18/03
IRHF9130
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units
V V/... |
| Description |
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
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| File Size |
125.31K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
JANSH2N7262 IRHF7230 IRHF8230 JANSR2N7262
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| OCR Text |
...
o
C
g
300 (0.063 in. (1.6mm) from case for 10s) 0.98 (typical)
www.irf.com
1
10/13/98
IRHF7230, IRHF8230,JANSR-,JANSH-,2N7262 Devices
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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| File Size |
298.46K /
12 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
JANTX2N6794
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| OCR Text |
....5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10.5 seconds) 0.98 (typical)
A
W W/K V V/ns
oC
g
To Order
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JANTX2N6794, JANTXV2N6794 Device
Index
Next Data Sheet
Electrical Characteristics @ T... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=3.0ohm, Id=1.5A)
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| File Size |
189.48K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
JANTXV2N6762 JANTX2N6762
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| OCR Text |
....5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10.5 seconds) 11.5 (typical)
A
W W/K V mJ A mJ V/ns
oC
g
To Order
Previous Datasheet
JANTX2N6762, JANTXV2N6762 Device
Index
Next Data Sheet
Electrical Characteristi... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=1.5ohm/ Id=4.5A)
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=1.5ohm, Id=4.5A)
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| File Size |
197.89K /
6 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
JANTXV2N6768 JANTX2N6768
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| OCR Text |
....0 -55 to 150 300 (0.063 in. (1.6mm) from case for 10.5 seconds) 11.5 (typical)
A
W W/K V mJ A mJ V/ns
oC
g
To Order
Previous Datasheet
JANTX2N6768, JANTXV2N6768 Device
Index
Next Data Sheet
Electrical Characteristi... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.300ohm, Id=14A)
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| File Size |
197.98K /
6 Page |
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it Online |
Download Datasheet |
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Panasonic
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| Part No. |
MN3726AT MN3726FT
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| OCR Text |
6mm (type-1/3) 512h high-resposivity ccd area image sensors n overview the mn3726ft and mn3726at are 6mm (type-1/3) interline transfer ccd (it-ccd) solid state image sensor devices. this device uses photodiodes in the optoelectric conver- s... |
| Description |
Image Pickup Devices
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| File Size |
198.93K /
8 Page |
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it Online |
Download Datasheet |
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Panasonic
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| Part No. |
MN3716AT MN3716FT
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| OCR Text |
6mm (type-1/3) 512h high-responsivity ccd area image sensors n overview the mn3716ft and mn3716at are 6mm (type-1/3) interline transfer ccd (it-ccd) solid state image sensor devices. this device uses photodiodes in the optoelectric conver- ... |
| Description |
Image Pickup Devices
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| File Size |
199.28K /
8 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
JANTXV2N6770 JANTX2N6770
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| OCR Text |
....5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10.5 seconds) 11.5 (typical)
A
W W/K V mJ A mJ V/ns
oC
g
To Order
Previous Datasheet
JANTX2N6770, JANTXV2N6770 Device
Index
Next Data Sheet
Electrical Characteristi... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=500v, Rds(on)=0.40ohm, Id=12A)
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| File Size |
195.54K /
6 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
JANTXV2N6782 JANTX2N6782
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| OCR Text |
....5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10.5 seconds) 0.98 (typical)
A
W W/K V V/ns
oC
g
To Order
Previous Datasheet
JANTX2N6782, JANTXV2N6782 Device
Index
Next Data Sheet
Electrical Characteristics @ T... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.60ohm, Id=3.5A)
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| File Size |
196.13K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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