hf/Vhf power amplifier
Features
* * * * * * * High breakdown voltage You can decrease handling current. Included gate protection diode No secondary-breakdown Wide area of safe operation Simple bias circuitry No thermal runaway
Outlin...
Description
RF POWER, FET From old datasheet system Silicon N-Channel MOS FET (hf/Vhf power amplifier)
...r (FET) designed especially for hf and Vhf power amplifier applications. M/A-COM RF MOS FETs feature planar design for optimum manufacturability. M/A-COM Application Note AN211A, FETs in Theory and Practice, is suggested reading for those n...
Description
2 CHANNEL, Uhf BAND, Si, N-CHANNEL, RF POWER, MOSFET N-CHANNEL MOS BROADBAND RF POWER FET
...t transistor (FET) designed for hf and Vhf power amplifier applications. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major...
...t transistor (FET) designed for hf and Vhf power amplifier applications. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major...
...t transistor (FET) designed for hf and Vhf power amplifier applications. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major...
...are: * Vhf/Uhf mobile radios. * hf s.s.b. transceivers. * Airborne and marine communications and navaids. * Broadcast transmitters. * High quality radio and television receivers. * High performance citizens band equipment. * Signal generato...
hf/Vhf/Uhf N-CHANNEL MOSFETs
ADVANCE DATA
s s s s
GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION Pout = 30 W MIN. WITH 18 dB GAIN @ 30 MHz
DESCRIPTION The SD2918 is a gold metallized N-Channel MOS field...
hf/Vhf/Uhf N-CHANNEL MOSFETs
ADVANCE DATA
GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 14 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES M174 ...