Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPP093N06N3GXKSA1 60R2750 |
Infineon Technologies AG |
Mosfet, N Ch, 50A, 60V, Pg-To220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.008Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPP093N06N3GXKSA1 |
|
0 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPP093N06N3GHKSA1
|
Infineon Technologies AG |
|
|
50 |
IPP093N06N3 G
|
Infineon Technologies AG |
|
|
200 |
IPP093N06N3GXKSA1
|
Infineon Technologies AG |
|
|
899 |
IPP093N06N3GXKSA1
|
Infineon Technologies AG |
|
5: USD1.125
|
18 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPP093N06N3,G
|
Infineon Technologies AG |
|
424: USD1.2639 197: USD1.4171 1: USD3.064
|
468 |
IPP093N06N3GXKSA1
|
Infineon Technologies AG |
POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 60V, 0.0093OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB |
4: USD1.2 1: USD1.5
|
14 |
IPP093N06N3GXKSA1
|
Infineon Technologies AG |
POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 60V, 0.0093OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB |
191: USD0.8428 48: USD1.0535 1: USD2.107
|
719 |
Part # |
Manufacturer |
Description |
Price |
BuyNow Qty. |
IPP093N06N3GXKSA1
|
Infineon Technologies AG |
Trench 40<-<100V |
1000: USD0.5268 500: USD0.5578 100: USD0.5826 25: USD0.6074 1: USD0.6198
|
160 |
IPP093N06N3GXKSA1
|
International Rectifier |
Trench 40<-<100V |
1000: USD0.5268 500: USD0.5578 100: USD0.5826 25: USD0.6074 1: USD0.6198
|
26 |
|
|