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  K6R1008 Datasheet PDF File

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    SAMSUNG
Part No. K6R1008C1C
Description 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.

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HUA FENG CIRCUIT





    K6R1008C1B- K6R1008C1B-C10 K6R1008C1B-C12 K6R1008C1B-C8 K6R1008C1B-I10 K6R1008C1B-I12 K6R1008C1B-I8

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K6R1008C1B- K6R1008C1B-C10 K6R1008C1B-C12 K6R1008C1B-C8 K6R1008C1B-I10 K6R1008C1B-I12 K6R1008C1B-I8
Description 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速静电RAM5V工作,旋转频出。在经营商业和工业温度范围
128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速静态RAM5V工作,旋转频出。在经营商业和工业温度范围
128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

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    K6R1008V1B-B-L K6R1008V1B-C10 K6R1008V1B-C8 K6R1008V1B-I8 K6R1008V1B-B-P K6R1008V1B-C-L K6R1008V1B-C12 K6R1008V1B-I-P K6

Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K6R1008V1B-B-L K6R1008V1B-C10 K6R1008V1B-C8 K6R1008V1B-I8 K6R1008V1B-B-P K6R1008V1B-C-L K6R1008V1B-C12 K6R1008V1B-I-P K6R1008V1B-I10 K6R1008V1B-I12 K6R1008V1B K6R1008V1B-TP10
Description 128K X 8 STANDARD SRAM, 10 ns, PDSO32
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges 128Kx8位高速静态RAM.3V的工作),革命销出。在商用和工业温度范围运

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    K6R1008V1C K6R1008V1C-C K6R1008V1C-C10 K6R1008V1C-C12 K6R1008V1C-C15 K6R1008V1C-I K6R1008V1C-I10 K6R1008V1C-I12 K6R1008V

Samsung semiconductor
Part No. K6R1008V1C K6R1008V1C-C K6R1008V1C-C10 K6R1008V1C-C12 K6R1008V1C-C15 K6R1008V1C-I K6R1008V1C-I10 K6R1008V1C-I12 K6R1008V1C-I15 K6R1008V1C-J K6R1008V1C-L K6R1008V1C-P K6R1008V1C-T K6R1008V1C-TI15
Description 128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).

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    K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C1A-C20 K6R1008C1A-I12 K6R1008C1A-I15 K6R1008C1A-I20 K6R1008C1A-TC20 K6

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C1A-C20 K6R1008C1A-I12 K6R1008C1A-I15 K6R1008C1A-I20 K6R1008C1A-TC20 K6R1008C1A-TI20 K6R1008C1A-JC15 K6R1008C1A-JI15 K6R1008C1A-JI20 K6R1008C1A-TC12 K6R1008C1A-TI12 K6R1008C1A-TI15
Description 128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存(5V工作),旋转引脚输出。在商用和工业温度范围操
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
128K x 8 high speed static RAM, 5V operating, 20ns
128K x 8 high speed static RAM, 5V operating, 15ns

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    K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C1C-C15 K6R1008C1C-I10 K6R1008C1C-I12 K6R1008C1C-I15 K6R1008C1C-J10 K6R

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C1C-C15 K6R1008C1C-I10 K6R1008C1C-I12 K6R1008C1C-I15 K6R1008C1C-J10 K6R1008C1C-J12 K6R1008C1C-J15 K6R1008C1C-T10 K6R1008C1C-T12 K6R1008C1C-T15 K6R1008C1C-P15 K6R1008C1C-L10 K6R1008C1C-L12 K6R1008C1C-L15 K6R1008C1C-P10 K6R1008C1C-P12 K6R1008C1C-JC15 K6R1008C1C-JI12 K6R1008C1C-JI10 K6R1008C1C-JC12
Description 128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns

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    K6R1008C1D K6R1016C1 K6R1016C1D K6R1016V1D K6R1016V1D-TC10 K6R1004C1D-JCI1012 K6R1004V1D-JCI0810 K6R1008C1D-JTCI1012

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
Part No. K6R1008C1D K6R1016C1 K6R1016C1D K6R1016V1D K6R1016V1D-TC10 K6R1004C1D-JCI1012 K6R1004V1D-JCI0810 K6R1008C1D-JTCI1012
Description 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的)在商业和工业温度范围操作
64K X 16 STANDARD SRAM, 10 ns, PDSO44

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    K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6R1008V1D-TC10 K6R1008V1D-JC08 K6R1016C1D-TC10 K6R1008C1D-JC10 K6R1016C

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6R1008V1D-TC10 K6R1008V1D-JC08 K6R1016C1D-TC10 K6R1008C1D-JC10 K6R1016C1D-JC10 K6R1004C1D-JC10 K6R1008C1D-TI10 K6R1016C1D-EC10 K6R1016C1D-EI10 K6R1016C1D-JI10 K6R1016C1D-KC10 K6R1016C1D-KI10 K6R1016C1D-TI10 K6R1016C1D-UC10 K6R1016C1D-UI10 K6R1016V1D-UI10 K6R1004C1D K6R1004C1D-JI10 K6R1004C1D-KC10 K6R1004C1D-KI10 K6R1004V1D-JC08 K6R1004V1D-JC10 K6R1004V1D-JI08 K6R1004V1D-JI10 K6R1004V1D-KC10 K6R1004V1D-KI08 K6R1004V1D-KI10 K6R1008C1D-JI10 K6R1008C1D-KC10 K6R1008C1D-KI10 K6R1008C1D-UC10 K6R1008C1D-UI10 K6R1008V1D-JC10 K6R1008V1D-JI08 K6R1008V1D-JI10 K6R1008V1D-KC08 K6R1008V1D-KC10 K6R1008V1D-KI08 K6R1008V1D-KI10 K6R1008V1D-TC08 K6R1008V1D-TI08 K6R1008V1D-TI10 K6R1008V1D-UC08 K6R1008V1D-UC10 K6R1008V1D-UI08 K6R1008V1D-UI10 K6R1016V1D-EC08 K6R1016V1D-EC10 K6R1016V1D-EI08 K6R1016V1D-EI10 K6R1016V1D-JC08 K6R1016V1D-JI08 K6R1016V1D-JI10 K6R1016V1D-KC08 K6R1016V1D-KC10 K6R1016V1D-KI08 K6R1016V1D-KI10 K6R1016V1D-TC08 K6R1016V1D-TC10 K6R1016V1D-TI08 K6R1016V1D-TI10 K6R1016V1D-UC08 K6R1016V1D-UC10 K6R1016V1D-UI08 K6R1004C1D-KC100
Description 256K X 4 STANDARD SRAM, 10 ns, PDSO32
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位(与OE)的高速CMOS静态RAM.0V操作)
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位(与OE)的高速CMOS静RAM.0V操作)

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    K6R1004C1D-JCI10_12 K6R1004C1D-JCI10 K6R1004C1D-JCI12 K6R1004V1D-JCI08 K6R1004V1D-JCI10 K6R1008C1D-JTCI10 K6R1008C1D-JTC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K6R1004C1D-JCI10_12 K6R1004C1D-JCI10 K6R1004C1D-JCI12 K6R1004V1D-JCI08 K6R1004V1D-JCI10 K6R1008C1D-JTCI10 K6R1008C1D-JTCI12 K6R1008V1D K6R1008V1D-JTCI08 K6R1008V1D-JTCI10 K6R1008V1D-J_TC_I10 K6R1004C1D-JC_I10 K6R1004C1D-JC_I12 K6R1004V1D-JC_I08 K6R1004V1D-JC_I10 K6R1008C1D-J_TC_I10 K6R1008C1D-J_TC_I12 K6R1008V1D-J_TC_I08 K6R1016V1D-JTICI08_10 K6R1016C1D-JTCI10_12 K6R1016C1D-JECII10_12 K6R1004V1D-JCI08_10 K6R1008V1D-JTCI08_10 K6R1016V1D-JECI08_10 K6R1008C1D-JTCI10_12
Description 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K6R1016V1D-UI10 K6R1004C1D-JC10 K6R1004C1D-JI10 K6R1004C1D-KC10 K6R1004C1D-KI10 K6R1004V1D K6R1004V1D-JC08 K6R1004V1D-JC08_10 K6R1004V1D-JC10 K6R1004V1D-JI08 K6R1004V1D-JI08_10 K6R1004V1D-JI10 K6R1004V1D-KC08 K6R1004V1D-KC08_10 K6R1004V1D-KI08 K6R1004V1D-KI08_10 K6R1004V1D-KI10 K6R1008C1D-JC10 K6R1008C1D-JI10 K6R1008C1D-KC10 K6R1008C1D-KI10 K6R1008C1D-TC10 K6R1008C1D-UC10 K6R1008C1D-UI10 K6R1008V1D-JC08 K6R1008V1D-JC08_10 K6R1008V1D-JC10 K6R1008V1D-JI08 K6R1008V1D-JI08_10 K6R1008V1D-JI10 K6R1008V1D-KC08 K6R1008V1D-KC08_10 K6R1008V1D-KC10 K6R1008V1D-KI08 K6R1008V1D-KI08_10 K6R1008V1D-KI10 K6R1008V1D-TC08 K6R1008V1D-TC08_10 K6R1008V1D-TC10 K6R1008V1D-TI08 K6R1008V1D-TI08_10 K6R1008V1D-TI10 K6R1008V1D-UC08 K6R1008V1D-UC08_10 K6R1008V1D-UC10 K6R1008V1D-UI08 K6R1008V1D-UI08_10 K6R1008V1D-UI10 K6R1016C1D-EC10 K6R1016C1D-EI10 K6R1016C1D-JC10 K6R1016C1D-JI10 K6R1016C1D-KC10 K6R1016C1D-KI10 K6R1016C1D-TC10 K6R1016C1D-TI10 K6R1016C1D-UC10 K6R1016C1D-UI10 K6R1016V1D-EC08 K6R1016V1D-EC08_10 K6R1016V1D-EC10 K6R1016V1D-EI08 K6R1016V1D-EI08_10 K6R1016V1D-EI10 K6R1016V1D-JC08 K6R1016V1D-JC08_10 K6R1016V1D-JC10 K6R1016V1D-JI08 K6R1016V1D-JI08_10 K6R1016V1D-JI10 K6R1016V1D-KC08 K6R1016V1D-KC08_10 K6
Description 256K X 4 STANDARD SRAM, 10 ns, PDSO32
256K X 4 STANDARD SRAM, 8 ns, PDSO32
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静RAM.3V的)在商业和工业温度范围操作
TV 23C 21#20 2#16 SKT PLUG REC
64Kx16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
64Kx16 bit high-speed CMOS static RAM(3.3V Operaing) operated at commercial and industrial temperature ranges
TV 55C 55#22D SKT PLUG RECP

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Part: K6R1008C1C-JC15
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