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    MTD6N10E ON2512 MTD6N10E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD6N10E ON2512 MTD6N10E-D
Description TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
From old datasheet system
File Size 211.15K  /  10 Page

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