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  silicon pnp epitaxial Datasheet PDF File

For silicon pnp epitaxial Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
Part No. 1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1N4702 1N4700 1N4680 1N4681 1N4707 1N4701 1N4704 1N4678 1N4687 1N4690 1N4689 1N4715 1N4711 1N4710 1N4693 1N4688 1N4696 1N4692 1N4697 1N4695 1N4691 1N4679 1N4682 1N4712 1N4716 1N4699
Description silicon epitaxial Planar Z-Diodes 硅外延平面的Z -二极
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V,最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电3V,最大反向电流降.01μA的硅外延平面型齐纳二极管
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V,最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电12V的,最大反向电.05μA的硅外延平面型齐纳二极管
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V,最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电14V的,最大反向电.05μA的硅外延平面型齐纳二极管
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V,最大反向电.0μA的硅外延平面型齐纳二极管)
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V,最大反向电.0μA的硅外延平面型齐纳二极管)
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V,最大反向电.0μA的硅外延平面型齐纳二极管)
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V,最大反向电.5μA的硅外延平面型齐纳二极管)
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V,最大反向电.8μA的硅外延平面型齐纳二极管)
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V,最大反向电0μA的硅外延平面型齐纳二极管)
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V,最大反向电.5μA的硅外延平面型齐纳二极管)
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V,最大反向电.0μA的硅外延平面型齐纳二极管)
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V,最大反向电.0μA的硅外延平面型齐纳二极管)
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V,最大反向电.0μA的硅外延平面型齐纳二极管)
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V,最大反向电.0μA的硅外延平面型齐纳二极管)
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V,最大反向电0μA的硅外延平面型齐纳二极管)
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V,最大反向电0μA的硅外延平面型齐纳二极管)
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V,最大反向电.0μA的硅外延平面型齐纳二极管)
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V,最大反向电.0μA的硅外延平面型齐纳二极管)
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V,最大反向电0μA的硅外延平面型齐纳二极管)
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V,最大反向电.5μA的硅外延平面型齐纳二极管)
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V,最大反向电0μA的硅外延平面型齐纳二极管)
PC 5/10-G-7,62
PCV 5/ 4-G-7,62
silicon epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V,最大反向电0μA的硅外延平面型齐纳二极管)
From old datasheet system
silicon epitaxial Planar Z?Diodes

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    MMBTH10 MMBTSA1037 MMBTSA1162 MMBTSA1182 1SS390 MMBTRC242S MMBTRC241S MMBTRC243S MPSA13 1SS420 MPSA06 MPSA14 MMBTRC245S

SEMTECH ELECTRONICS LTD.
SEMTECH ELECTRONICS LTD...
Part No. MMBTH10 MMBTSA1037 MMBTSA1162 MMBTSA1182 1SS390 MMBTRC242S MMBTRC241S MMBTRC243S MPSA13 1SS420 MPSA06 MPSA14 MMBTRC245S 1SS314WT ST2SB772T MPSA56 MPSA05 MMBTRA226S 1SS277WT MPSA10 MMBTRC244S 1SS400 MPSH17 MPSA11 MMBTRA221S MMBTRA222S MMBTRA224S MMBTRA223S MMBTRA225S MMBTRC246S 1SS389
Description NPN silicon VHF/UHF Transistor
pnp silicon epitaxial Planar Transistor
silicon epitaxial PLANAR DIODE
NPN silicon epitaxial Planar Transistors
silicon epitaxial PLANAR SCHOTTKY BARRIER DIODE
pnp silicon epitaxial POWER TRANSISTOR
BAND SWITCHING DIODE
silicon epitaxial PLANAR SWITCHING DIODE
   silicon epitaxial SCHOTTKY BARRIER DIODE

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    Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
Part No. 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2N6109 2N6111 2N6475 2N6106 2N6288 2N6289 2N6291 2N6292
Description epitaxial-BASE/ silicon N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
epitaxial-BASE silicon N-P-N AND P-N-P VERSAWATT TRANSISTORS
epitaxial-BASE, silicon N-P-N AND P-N-P VERSAWATT TRANSISTORS

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    SS9012 SS9012GBU SS9012HBU SS9012HTA

FAIRCHILD[Fairchild Semiconductor]
Part No. SS9012 SS9012GBU SS9012HBU SS9012HTA
Description NPN epitaxial silicon Transistor To-92
1W Output Amplifier of Potable Radios in Class B Push-pull Operation.
pnp epitaxial silicon Transistor

File Size 33.37K  /  4 Page

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    Sanyo
Part No. 2SC4563
Description pnp epitaxial Planar silicon Transistor Ultrahigh-Definition CRT Display Video Output Applications
NPN epitaxial Planar silicon Transistors

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    UPA836TF UPA836TF-T1 PA836TF

NEC Corp.
Part No. UPA836TF UPA836TF-T1 PA836TF
Description NPN silicon epitaxial Transisitor(NPN外延晶体
NPN silicon epitaxial TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

File Size 66.37K  /  12 Page

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    UPA833TF UPA833TF-T1 PA833TF

NEC Corp.
NEC[NEC]
Part No. UPA833TF UPA833TF-T1 PA833TF
Description NPN silicon epitaxial Transisitor(NPN外延晶体
NPN silicon epitaxial TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

File Size 72.04K  /  16 Page

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    UPA832 UPA832TF UPA832TF-T1 PA832TF

NEC, Corp.
NEC Corp.
Part No. UPA832 UPA832TF UPA832TF-T1 PA832TF
Description NPN silicon epitaxial Transisitor(NPN外延晶体 NPN硅外Transisitor(npn型外延晶体管
NPN silicon epitaxial TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

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    UPA834TF UPA834TF-T1 PA834TF

NEC, Corp.
NEC Corp.
Part No. UPA834TF UPA834TF-T1 PA834TF
Description NPN silicon epitaxial TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE NPN硅外延晶体管个不同的元素,采6引脚薄型模具迷你小包
NPN silicon epitaxial Transisitor(NPN外延晶体

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    Sanyo
Part No. 2SC2078
Description NPN epitaxial Planar silicon Transistor 27MHz RF Power Amplifier Applications
pnp epitaxial Planar silicon Transistors

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