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stp8na50 Datasheet PDF File

For stp8na50 Found Datasheets File :: 15 Search Time::1.531ms
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					STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	stp8na50 stp8na50FI 3075
OCR Text	stp8na50 stp8na50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE stp8na50 stp8na50FI s s s s s s s V DSS 500 V 500 V R DS( on) < 0.85 < 0.85 ID 8A 4.5 A TYPICAL RDS(on) = 0.7 30V GATE TO SOURCE VOLTAGE RATI...
Description	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
File Size	195.56K / 10 Page	View it Online	Download Datasheet

					ST Microelectronics
Part No.	stp8na50FI
OCR Text	stp8na50 stp8na50fi n - channel enhancement mode fast power mos transistor n typical r ds(on) = 0.7 w n 30v gate to source voltage rating n 100% avalanche tested n repetitive avalanche data at 100 o c n low intrinsic capacitances n gat...
Description	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
File Size	415.04K / 10 Page	View it Online	Download Datasheet

					ST Microelectronics
Part No.	P8NA50
OCR Text	stp8na50 stp8na50fi n - channel enhancement mode fast power mos transistor n typical r ds(on) = 0.7 w n 30v gate to source voltage rating n 100% avalanche tested n repetitive avalanche data at 100 o c n low intrinsic capacitances n gate gh...
Description	Search --To stp8na50
File Size	236.92K / 10 Page	View it Online	Download Datasheet

					ST Microelectronics
Part No.	stp8na50FI
OCR Text	stp8na50 stp8na50fi n - channel enhancement mode fast power mos transistor n typical r ds(on) = 0.7 w n 30v gate to source voltage rating n 100% avalanche tested n repetitive avalanche data at 100 o c n low intrinsic capacitances n gate gh...
Description	N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
File Size	206.41K / 10 Page	View it Online	Download Datasheet

					Panasonic Semiconductor
Part No.	EVAL6569
OCR Text	...ure 7 shows an example with the stp8na50 that has an 0.85 w resistance r ds-on . the built-in dead time circuit acts when a mos- fet turns off, delaying the turn on of the opposite transistor for 1.25 m s. the voltage v out between the ...
Description	THE L6569 A NEW HIGH VOLTAGE IC DRIVER FOR ELECTRONIC LAMP BALLAST
File Size	187.30K / 14 Page	View it Online	Download Datasheet

					SGS Thomson Microelectronics
Part No.	AN880
OCR Text	...ure 7 shows an example with the stp8na50 that has an 0.85 w resistance r ds-on . the built-in dead time circuit acts when a mos- fet turns off, delaying the turn on of the opposite transistor for 1.25 m s. the voltage v out between the 2 mo...
Description	THE L6569: A NEW HIGH VOLTAGE IC DRIVER FOR ELECTRONIC LAMP BALLAST
File Size	123.87K / 14 Page	View it Online	Download Datasheet

					ST Microelectronics STMicroelectronics
Part No.	L6560D 1577 L6560 L6560A L6560AD
OCR Text	... 3 C2 22F 25V 6 R5 10 MOS stp8na50 C5 47F 450V - TRANSFORMER T: core THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT primary 90T of Litz wire 10 x 0.2mm secondary 7T of #27 AWG (0.15mm) gap 1.25mm for a total primary...
Description	POWER FACTOR CORRECTOR From old datasheet system POWER FACTOR CORRECTOR
File Size	566.13K / 11 Page	View it Online	Download Datasheet

					ST Microelectronics
Part No.	L6561 L6561D
OCR Text	... 5 6 l6561 7 21 c3 1 m f r5 mos stp8na50 d1 byt13-600 r7 (*) 998k c5 47 m f 450v vo=400v po=80w + - d97in553b transformer t: core thomson-csf b1et2910a (etd 29 x 16 x 10mm) or equivalent (orega 473201a8) primary 90t of litz wire 10 x...
Description	POWER FACTOR CORRECTOR
File Size	220.69K / 12 Page	View it Online	Download Datasheet

					STMicro
Part No.	L6560A L6560
OCR Text	... 3 C2 22F 25V 6 R5 10 MOS stp8na50 C5 47F 450V - TRANSFORMER T: core THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT primary 90T of Litz wire 10 x 0.2mm secondary 7T of #27 AWG (0.15mm) gap 1.25mm for a total primary...
Description	POWER FACTOR CORRECTOR
File Size	139.69K / 11 Page	View it Online	Download Datasheet

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