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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA30H3340M_06 RA30H3340M RA30H3340M-101 RA30H3340M06
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| OCR Text |
...ttached by Silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate and coated by resin. Lines on the substrate (eventually inductors), chip capacitors and resistors form the bias and matching circuits. ... |
| Description |
RoHS Compliance , 330-400MHz 30w 12.5V, 3 Stage Amp. For MOBILE RADIO
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| File Size |
70.27K /
7 Page |
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Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA30H4452M_06 RA30H4452M RA30H4452M-101 RA30H4452M06
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| OCR Text |
...ttached by Silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate and coated by resin. Lines on the substrate (eventually inductors), chip capacitors and resistors form the bias and matching circuits. ... |
| Description |
RoHS Compliance , 440-520mhz 30w 12.5V MOBILE RADIO
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| File Size |
70.13K /
7 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD30HUF1
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| OCR Text |
....3 4-C1
Silicon MOSFET Power transistor,520mhz,30w DESCRIPTION
RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
7.2+/-0.5
OUTLINE
*High power gain: Pout>30w, Gp>10dB @Vdd=12.5V... |
| Description |
Silicon MOSFET Power transistor/520mhz/30w
Silicon MOSFET Power transistor,520mhz,30w
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| File Size |
386.46K /
7 Page |
View
it Online |
Download Datasheet |
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transistor 520mhz 30w Found Datasheets File :: 9 Search Time::1.016ms
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