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IPP093N06N3G - OptiMOS?? Power-Transistor OptiMOS? Power-Transistor

IPP093N06N3G_4958526.PDF Datasheet


Part No.	IPP093N06N3G IPB090N06N3G
Description	OptiMOS?? Power-Transistor OptiMOS? Power-Transistor
File Size	288.09K / 10 Page
Maker	Infineon Technologies AG
Homepage	http://www.infineon.com/
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Price & Availability of IPP093N06N3G

Newark

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPP093N06N3GXKSA1 60R2750	Infineon Technologies AG	Mosfet, N Ch, 50A, 60V, Pg-To220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.008Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes \|Infineon IPP093N06N3GXKSA1		0

Bristol Electronics

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPP093N06N3GHKSA1	Infineon Technologies AG			50
IPP093N06N3GXKSA1	Infineon Technologies AG			899
IPP093N06N3GXKSA1	Infineon Technologies AG		5: USD1.125	18
IPP093N06N3 G	Infineon Technologies AG			200

Quest Components

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPP093N06N3,G	Infineon Technologies AG		424: USD1.2639 197: USD1.4171 1: USD3.064	468
IPP093N06N3GXKSA1	Infineon Technologies AG	POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 60V, 0.0093OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB	4: USD1.2 1: USD1.5	14
IPP093N06N3GXKSA1	Infineon Technologies AG	POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 60V, 0.0093OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB	191: USD0.8428 48: USD1.0535 1: USD2.107	719

Rochester Electronics

Part #	Manufacturer	Description	Price	BuyNow Qty.
IPP093N06N3GXKSA1	Infineon Technologies AG	Trench 40<-<100V	1000: USD0.5268 500: USD0.5578 100: USD0.5826 25: USD0.6074 1: USD0.6198	160
IPP093N06N3GXKSA1	International Rectifier	Trench 40<-<100V	1000: USD0.5268 500: USD0.5578 100: USD0.5826 25: USD0.6074 1: USD0.6198	26

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